主な学術論文・解説・著書・特許・最近の学会発表


主な学術論文

(1) Characteristics of Electrolessly Deposited CoReNiMnP Films with Perpendicular Magnetic Anisotropy, H. Matsuda, O. Takano, and P. J. Grundy, Journal of Magnetism and Magnetic Materials, Vol. 128, 386 (1993).

(2) Effect of Dissolved Oxygen on the Magnetic Properties of Electrolessly Deposited Co-P Films, H. Matsuda, and O. Takano, Journal of Magnetism and Magnetic Materials, Vol. 131, 440 (1994).

(3) Characteristics of Electrolessly Deposited Cobalt Tin Phosphorus Films, H. Matsuda and O. Takano, Journal of Magnetism and Magnetic Materials, Vol. 134, 185 (1994).

(4) Magnetization Mechanism of Electrolessly Deposited NiXP/CoReNiMnP Double Layer Films, H. Matsuda, D. Kim, and O. Takano, Transactions of the Institute of Metal Finishing UK, Vol. 72, 150 (1994).

(5) Magnetic Recording Properties of Electrolessly Deposited NiXP/CoReNiMnP Double Layer Media, H. Matsuda, I. Takasu, D. Kim, O. Takano, and P. J. Grundy, Journal of Magnetism and Magnetic Materials, Vol. 155, 250 (1996).

(6) Improvement of the Sintering Processes in a Sendust Alloy Powder Used as a Magnetic Recording Head Material, I. Takasu, A. Yanagitani, and H. Matsuda, Journal of Magnetism and Magnetic Materials, Vol. 163, 397 (1996).

(7) Hole Diffusion Length and Temperature Dependence of Photovoltages for n-Si Electrodes Modified with LB Layers of Ultrafine Platinum Particles, J. G. Jia, M. Fujitani, S. Yae, and Y. Nakato, Electrochim. Acta, Vol. 42, 431 (1996).

(8) Improvement in Photovoltage and Stability of Porous n-Si Electrodes Coated with Platinum by Regulation of the Thickness of Nanoporous Layers, K. Kawakami, T. Fujii, S. Yae, and Y. Nakato, J. Phys. Chem. B, Vol. 101, 4508 (1997).

(9)
無電解めっき法による半導体複合めっき膜の作製とその光電気化学特性, 岩岸哲也, 八重真治, 松田 均, 表面技術, Vol. 49, 1235 (1998).

(10) Development of Electrolessly Deposited Nano Fe-P Films, H. Matsuda, S. Yae, T. Iwagishi, and H. Matsuo, Trans IMF, Vol. 76, 241 (1998).

(11)
無電解めっきの活性化前処理におけるSnおよびPdの吸着量とCo−Pめっき皮膜の表面形態, 山岸憲史, 曽我倫明, 西羅正芳, 八重真治, 松田 均, 表面技術, Vol. 50, 378 (1999).

(12)
ヒドラジンを還元剤とする無電解Niめっき膜の光沢性の向上, 八重真治, 伊藤 潔, 山憲史, 松田 均, 表面技術, Vol. 51, 99 (2000).

(13)
無電解めっきの活性化前処理により絶縁性基板上に形成された触媒核の直接観察, 山岸憲史, 八重真治, 西羅正芳, 松田 均, 表面技術, Vol. 51, 215 (2000).

(14)
ヒドラジンを還元剤とする無電解Niめっき膜の光沢性と結晶配向性, 八重真治, 中野久継, 伊藤 潔, 山岸憲史, 松田 均, 表面技術,Vol. 51, 1035 (2000).

(15) Electrochemical Deposition of Fine Pt Particles on n-Si Electrodes for Efficient Photoelectrochemical Solar Cells, Shinji YAE, Masaki KITAGAKI, Taizou HAGIHARA, Yuichi MIYOSHI, Hitoshi MATSUDA, Bruce A. PARKINSON, and Yoshihiro NAKATO, Electrochim. Acta, Vol. 47, 345 (2001).

(16)
無電解めっきの活性化前処理により基板に形成される吸着物の量および形態−センシタイジング液のエージングの影響−, 八重真治, 内野智朗, 関根雄介, 岡本尚樹, 山岸憲史, 松田 均, 表面技術, Vol. 52, 713 (2001).

(17) Formation of porous silicon by metal particle enhanced chemical etching in HF solution and its application for efficient solar cells, S. Yae, Y. Kawamoto, H. Tanaka, N. Fukumuro, and H. Matsuda, Electrochem. Comm., Vol. 5, 632 (2003).

(18) Electrolessly Deposited Co-W-Zn-P Films Having High Coercivity and High Corrosion Resistance, S. Yae, T. Kanki, N. Fukumuro, Y. Yamada, and H. Matsuda, Trans. IMF, Vol. 81, 45 (2003).

(19)
無電解めっきの二液法活性化前処理により非導電性基板上に形成される吸着物, 山岸憲史, 八重真治,岡本尚樹, 福室直樹, 松田 均, 表面技術, Vol. 54, 150 (2003).

(20) TiO
2光触媒を利用したマグネシウム合金上への無電解めっきの光パターニング, 福室直樹,加藤陽平,八重真治,松田 均, 表面技術, 54(12), 1056-1057 (2003).

(21)
ヒドラジンを還元剤とする無電解純ニッケルめっきの浴組成の単純化, 八重真治,濱田隆弘,横山敦之,伊藤 潔,福室直樹,松田 均, 表面技術,55(1)89-90 (2004).

(22)
無電解めっきの活性化前処理に用いられるセンシタイジング液の経時変化, 岡本尚樹, 八重真治, 山岸憲史, 三俣宣明, 渡辺 徹, 福室直樹, 松田 均, 表面技術, 55(4), 281-285 (2004).

(23)
無電解Ni-P/TiO
2複合めっき膜の構造と光電流密度, 福室直樹, 臼井勇樹, 八重真治, 松田 均, 表面技術, 55(5), 355-359 (2004).

(24)
二液法活性化により非導電性基板上に形成される吸着物と無電解Ni-Pめっき初期析出物の微視的形態, 山岸憲史, 岡本尚樹, 鵜川博之, 福室直樹, 八重真治, 松田 均, 表面技術, 55(6), 417-422 (2004).

(25) Reaction Process of Two-Step Catalysation Pre-treatment for Electroless Plating on Non-conductiong Substrates, K. Yamagishi, N. Okamoto, N. Mitsumata, N. Fukumuro, S. Yae, and H. Matsuda, Trans. Inst. Met. Fin., 82(3/4), 114-117 (2004).

(26) Autocatalytic Deposition of Pure Nickel Films Having Bright Surfaces and High Electrical Conductivity, K. Ito, S. Yae, T. Hamada, H. Nakano, N. Fukumuro, and H. Matsuda, Electrochemistry, 73(2), 123-127 (2005).

(27) Electroless Deposition of Pure Nickel Films from a Simple Solution Consisting of Nickel Acetate and Hydrazine, S. Yae, K. Ito, T. Hamada, N. Fukumuro, and H. Matsuda, Plat. Surf. Finish., 92(4), 58-62 (2005)

(28)
ヒドラジンを還元剤とする無電解純ニッケルめっき膜の微細構造と電気伝導性, 伊藤 潔,福室直樹,八重真治, 松田 均, エレクトロニクス実装学会誌, 8(3), 233-236 (2005).

(29) Porous silicon formation by HF chemical etching for antireflection of solar cells, Shinji Yae, Hiroyuki Tanaka, Tsutomu Kobayashi, Naoki Fukumuro, and Hitoshi Matsuda, Phys. Stat. Sol. (c), 2(9), 3476-3480 (2005).

(30) Microstructural feature of crystalline-amorphous transition layer in structurally graded Co-P films produced by an electroless plating process, N. Fukumuro, J. Nishiyama, S. Yae, and H. Matsuda, Trans. Inst. Met. Finish., 83(6), 281-285 (2005).

(31) Photocatalytic Initiation and Patterning of Autocatalytic Deposition of Metal Films on Magnesium Alloy Substrates, S. Yae, Y. Kato, N. Fukumuro, K. Tanaka, and H. Matsuda, Photocatalytic and Advanced Oxidation Processes for Treatment of Air, Water, Soil and Surfaces (Proceedings of TiO2-9 and AOTs-10) Edited by D. F. Ollis, H. Al-Ekabi, Redox Technologies, Inc., 155-160 (2005).

(32)
ヒドラジンを還元剤とする無電解純ニッケルめっき膜の微細構造と電気伝導性, 伊藤 潔, 福室直樹, 八重真治, 松田 均, エレクトロニクス実装学会誌, 8(3), 233-236 (2005).

(33) Sn-Ag-Cu
鉛フリーはんだとの接合性に優れた無電解純Niめっき, 伊藤 潔, 福室直樹, 八重真治, 松田 均, エレクトロニクス実装学会誌, 9(1), 52-56 (2006).

(34) Antireflective Porous Layer Formation on Multicrystalline Silicon by Metal Particle Enhanced HF Etching, Shinji Yae, Tsutomu Kobayashi, Tatsunori Kawagishi, Naoki Fukumuro, and Hitoshi Matsuda, Solar Energy, 80(6), 701-706 (2006).

(35) Structural Change in Porous Si by Photoillumination During Metal Particle Enhanced Etching, S. Yae, T. Kobayashi, T. Kawagishi, N. Fukumuro, and H. Matsuda, Proc. the Intern. Symp. Pits & Pores III: Formation, Properties, and Significance for Advanced Materials, 206 ECS Meeting, Oct. 3-8, Honolulu HI USA, Edited by P. Schmuki, D. J. Lockwood, Y. H. Ogata, M. Seo, and H. S. Isaacs, ECS Proceedings Vol., 2004-19, 141-146 (2006).

(36) Confirmation of hydroxide in electroless cobalt alloy films by GDOES, N. Fukumuro, J. Nishiyama, K. Shigeta, H. Takagami, S. Yae, and H. Matsuda, Transactions of the Institute of Metal Finishing, 85(2), 111-112 (2007).

(37) Solar to chemical conversion using metal nanoparticle modified microcrystalline silicon thin film photoelectrode, Shinji Yae, Tsutomu Kobayashi, Makoto Abe, Noriaki Nasu, Naoki Fukumuro, Shunsuke Ogawa, Norimitsu Yoshida, Shuichi Nonomura, Yoshihiro Nakato, and Hitoshi Matsuda, Solar Energy Materials & Solar Cells, 91(4), 224-229 (2007).

(38) Co-P multilayer film electrodeposited under DC electrolysis, N. Fukumuro, J. Nishiyama, K. Shigeta, Y. Morimoto, H. Takagami, S. Yae, H. Matsuda, Electrochemistry Communications, 9(5), 1185-1188 (2007).

(39) In Situ Measurement of Internal Stress in Electrolessly Deposited Copper Film by Television Holographic Interferometry, Naoki Fukumuro, Motohiro Yamazaki, Kiyoshi Ito, Hajime Ishihara, Satoshi Kakunai, Shinji Yae, and Hitoshi Matsuda, Electrochemical and Solid‑State Letters, 10(6), E14-E15 (2007).

(40) Structure of Porous Si Formed by Metal-Particle (Pt, Pd) Enhanced HF Etching, Shinji Yae, Makoto Abe, Tatsunori Kawagishi, Kentarou Suzuki, Naoki Fukumuro, and Hitoshi Matsuda, Trans. Mater. Res. Soc. Jpn., 32(2), 445-448 (2007).

(41) Nucleation behavior in electroless displacement deposition of metals on silicon from hydrofluoric acid solutions, Shinji Yae, Noriaki Nasu, Kohei Matsumoto, Taizo Hagihara, Naoki Fukumuro, and Hitoshi Matsuda, Electrochimica Acta, 53(1), 35-41 (2007).

(42) Hydrogen production using metal nanoparticle modified silicon thin film photoelectrode, S. Yae, A. Onaka, M. Abe, N. Fukumuro, S. Ogawa, N. Yoshida, S. Nonomura, Y. Nakato, H. Matsuda, Solar Hydrogen and Nanotechnology II, Aug. 27-30, 2007, San Diego, CA USA, Edited by Jinghua Guo, Proc. of SPIE, 6650, #6650-12 (2007).

(43) Palladium Enhanced Etching of n-type Silicon in Hydrofluoric Acid Solution, Shinji Yae, Makoto Abe, Naoki Fukumuro, Hitoshi Matsuda, Electrochemistry, 72(2), 144-146 (2008).

(44) High Catalytic Activity of Palladium for Metal-Enhanced Hydrofluoric Acid Etching of Silicon, S. Yae, M. Tashiro, T. Hirano, M. Abe, N. Fukumuro, and H. Matsuda, ECS Transactions, 16(3), 285-289 (2008).

(45) Metal nanorod production in silicon matrix by electroless process, Shinji Yae, Tatsuya Hirano, Takashi Matsuda, Naoki Fukumuro, Hitoshi Matsuda, Appl. Surf. Sci., 255(8), 4670-4672 (2009).

(46) 平滑アルミナ基板と無電解純Niめっき膜の密着性と内部応力との関係, 伊藤 潔, 福室直樹,八重真治, 松田 均, エレクトロニクス実装学会誌, 12(2), 130-136 (2009).

 

(47) n型シリコン上への貴金属微粒子電析に及ぼす置換反応の影響, 河井めぐみ, 八重真治, 福室直樹, 松田 均, 表面技術, 60(5), 355-356 (2009).

 

(48) High Catalytic Activity of Palladium for Metal-Enhanced HF Etching of Silicon, Shinji Yae, Masayuki Tashiro, Makoto Abe, Naoki Fukumuro, and Hitoshi Matsuda, J. Electrochem. Soc., 157(2), D90-D93 (2010).

              Metal-enhanced HF etching of Si is an electroless method used to produce porous Si. Such etching generally uses not only metal-modified Si but also an oxidizing agent, such as hydrogen peroxide or metal ions. Pd exhibits high activity in enhancing the HF etching of Si without an oxidizing agent even under dissolved-oxygen-free and dark conditions. Electrolessly deposited Pd particles on n-type Si enhance the HF etching of Si but produce no porous layer. Patterned Pd films localize the etching under the boundary of the Pd deposited areas, and thus Pd can produce a microetch pattern on Si with a simple immersion in the HF solution. This etching reaction is explained by electron injection into the conduction band of Si due to the Pd-enhanced anodic oxidization of Si with water and the cathodic hydrogen evolution on Pd with the injected electrons.

 

(49) Adhesive Metal Film Formation on Silicon by Electroless Deposition Using Catalytic Anchors, Shinji Yae, Tatsuya Hirano, Keisuke Sakabe, Naoki Fukumuro, and Hitoshi Matsuda, ECS Trans., 25(27), 215-220 (2010).

              Autocatalytic electroless deposition, which is a conventional method to metalize nonmetallic substrates, requires catalyzation of substrates before deposition. For silicon (Si) substrates, obtaining adhesive metal films with conventional catalyzation pretreatments is difficult. In this study, we develop a new method to produce adhesive metal films on Si substrates by an electroless process that consists of three steps: 1) electroless displacement deposition of metal nanoparticles; 2) Si nanopore formation by metal-particleenhanced hydrofluoric acid etching; and 3) metal filling in nanopores and metal-film formation on the whole Si surface by autocatalytic electroless deposition. The metal nanorods in Si act as catalytic nanoanchors to promote autocatalytic electroless metal deposition and improve the adhesion of metal films on Si substrates.

 

(50) Electrochemical Deposition of Pt Particles from Hexachloroplatinate(IV) Ion and Tetrachloroplatinate(II) Ion Solutions, M. Kawai, N. Fukumuro, S. Yae, and H. Matsuda, ECS Trans., 25(33), 117-123 (2010).

              The behavior of Pt electrodeposition on n-Si is different between H2PtCl6 (Pt(IV)) and K2PtCl4 (Pt(II)) aqueous solutions. Immersion of bare n-Si wafers in a Pt(II) solution under an opencircuit condition deposits Pt particles on n-Si, but immersion in the Pt(IV) solution deposits no particles. In the Pt(IV) solution, silicon oxide is produced with holes injected into the Si valence band by the reduction reaction of Pt(IV) to Pt(II). The quantity of electrodeposited Pt on the glassy carbon at +0.10 V vs. SCE in the Pt(IV) solution was smaller than that of the Pt(II) case. Cyclic voltammetry shows that the electeroeposition behavior of Pt in the early stage is influenced by the substrates.

 

(51) In Situ Stress Measurement of Electrodeposited Ni Films by Television Holographic Interferometry, N. Fukumuro, T. Do, S. Kakunai, S. Yae, and H. Matsuda, ECS Trans., 25(34), 27-34 (2010)

           In situ stress measurements of electrodeposited Ni films from a sulfate bath during deposition were carried out by television holographic interferometry. The effect of the addition of saccharin sodium on the internal stress in the Ni films was studied. Structure change with film growth was investigated by cross-sectional TEM observation. Quantitative analysis of impurities and hydrogen in films was performed. The stress behaviors of Ni films changed drastically from a tensile direction to a compressive direction with an increase of the concentration of saccharin sodium.

 

(52) Effect of Absorbed Hydrogen on Microstructure of Electrodeposited Cobalt, A. Nakayama, N. Fukumuro, S. Yae, and H. Matsuda, ECS Trans., 25(34), 79-85 (2010)

           The objective of this study is to elucidate the relationship between the total amount of hydrogen absorbed in electrodeposited cobalt films and their microstructure. The electrodeposited cobalt films were produced by such different depositing conditions as a solution pH, bath temperature, and current density. Structure analysis with XRD and TEM and hydrogen analysis with TDS reveal that the cobalt films with higher absorbed hydrogen content have a structure with coarse grain that consisted of hcp(100) preferred orientation. On the other hand, the cobalt films with lower absorbed hydrogen content have a stacking fault structure of hcp(110)/fcc(220). The total amount of absorbed hydrogen has a liner relationship with the stacking fault ratio and the grain size.

 

(53) Microstructural Investigation of Modulated Structure in Electrolessly Deposited Co-P Films, Naoki Fukumuro, Jin Nishiyama, Shinji Yae, and Hitoshi Matsuda, Trans. Mater. Res. Soc. Jpn., 35(1), 55-58 (2010).

              The depositing conditions were investigated for obtaining a modulated structure that appeared between an amorphous structure and a columnar structure in electroless Co-P alloy films. The microstructure of electroless Co-P films was found to be sensitively dependent on the variation of the deposition rate controlled by both the solution pH and the stirring strength. Uniform modulated structure Co-P film was formed in the limited deposition rate range. Cross-sectional transmission electron microscopy clarified that the modulated structure Co-P film consists of a periodic array of granules less than 100 nm separated by amorphous channels enriched with phosphorous. The modulated structure Co-P film was comprised of hard and soft magnetic components.

 

(54) Influence of Displacement Reaction on Electrodeposition of Noble Metal Particles on Silicon, Shinji Yae, Megumi Kawai, Takashi Matsuda, Naoki Fukumuro, and Hitoshi Matsuda, Trans. Mater. Res. Soc. Jpn., 35(1), 73-76 (2010).

              In this paper, we investigate electrodeposition of Pt, Pd and Au particles on n-Si using a double potential step method that applies single pulse potential of -1 to -8 V vs. SCE and then maintains constant potential at -0.3 V. An aqueous solution of H2PtCl6, PdCl2 or HAuCl4 at pH 1.7 is used for the electrodeposition of each metal. The particle density of Pt is increased with a negative shift of the pulse potential and then remains nearly constant. The Pd particle density changes with the pulse potential in a similar manner to the Pt particle case. The particle density of Au is much higher than that of Pt, and it is independent of the pulse potential. Immersion of bare n-Si wafers in the H2PtCl6 solution under the open-circuit condition deposits no particles but produces silicon oxide. Immersion in a H2PtCl4 (Pt(II)) solution, under the same condition as the H2PtCl6 (Pt(IV)) case, deposits Pt particles on n-Si. Immersion in a HAuCl4 solution deposits almost the same particle density of Au as electrodeposition. These displacement reactions, which involve cathodic reduction of metal ions and anodic oxidation of Si, influences the electrodeposition behavior.

 

(55) Pd Assisted HF Etching of Si: Electrochemical Measurement, M. Tashiro, S. Yae, Y. Morii, N. Fukumuro, and H. Matsuda, ECS Trans., Vol. 33, No.16, 173-180 (2011).

              Metal-assisted HF etching of Si has attracted considerable attention as a new electroless method that can produce porous Si by immersing metal-modified Si in a HF solution without bias. Such etching generally uses not only metal-modified Si but also an oxidizing agent. Palladium exhibits high activity in assisted etching under dissolved-oxygen-free and dark conditions. In this study, we investigate the Pd assisted HF etching of n-Si by electrochemical measurements. The potential of Pd metal on Si is more negative than the potential of hydrogen evolution at open circuit conditions. Anodic current generation of Pd-modified Si electrodes at positive bias and the localization of etching under Pd films at low thickness indicate that Pd catalyzes the anodic dissolution of Si and the cathodic hydrogen evolution.

 

(56) New Surface-Activation-Process for Electroless Deposition of Adhesive Metal (Ni, Cu) Films on Si Substrates, S. Yae, K. Sakabe, N. Fukumuro, S. Sakamoto*, and H. Matsuda, *Nippon Oikos Co., Ltd., ECS Trans., Vol. 33, No.18, 33-37 (2011).

              We report a new surface-activation process for direct electroless deposition of adhesive metal films on silicon (Si) substrates. This process, which electrolessly forms metal nanorods in Si, consistsof three steps: Step 1) displacement deposition of metal nanoparticles; Step 2) metal-particle-assisted hydrofluoric acid etching for catalytic nanopore formation; and Step 3) autocatalytic electroless deposition of metal film on the Si surface. In this study, our new surface-activation process is successfully applied not only to nickel and cobalt but also to adhesive copper film deposition on Si substrates.

 

(57) Thermal Desorption Spectroscopic Study of Hydrogen in Electrodeposited Ni-P Films, T. Takemoto, N. Fukumuro, S. Yae, and H. Matsuda, ECS Trans., Vol. 33, No.21, 11-15 (2011).

              The objective of this study is to reveal the atomistic state of hydrogen in electrodeposited Ni-P films by thermal desorption spectroscopy. Two peaks corresponding to the desorption of hydrogen occupying regular interstitial sites and the break-up of vacancy-hydrogen (Vac-H) clusters were observed in electrodeposited pure Ni film. With an increase in phosphorus content, the crystallinity of electrodeposited Ni-P films decreased and the hydrogen desorption from the interstitial sites and Vac-H clusters disappeared. The amount of diffusible hydrogen increased abruptly with the increase in the amorphous phase in Ni-P film.

 

(58) Influence of Si Surface Condition on Electroless Displacement Deposition of Pt Particles, K. Takami, S. Yae, K. Yamagishi, N. Fukumuro, and H. Matsuda, ECS Trans., Vol. 33, No.21, 17-24 (2011).

              The displacement reaction, which is the immersion of Si wafers into a metal-salt solution containing HF, has been applied to prepare catalytic fine metal particles for metal-assisted HF etching, photoelectrochemical solar cells, and autocatalytic plating. The particle density of Pt particles deposited by displacement reaction on n-Si was different based on the solution used for Si chemical oxidation prior to the deposition. Particle density correlates not with the electrical state density at the SiOx/Si interface but with the contact angle of pure water and the microroughness of the oxidized n-Si surface. A model of the deposition process of Pt particles on an oxidized n-Si surface is proposed.

 

(59) Catalytic nanopores for electroless deposition of adhesive metal films on silicon: Applications to various silicon substrates including multi- and micro-crystalline, Shinji Yae, Keisuke Sakabe, Tatsuya Hirano, Naoki Fukumuro, and Hitoshi Matsuda, Phys. Stat. Sol. (c), 8(6), 1769-1773  (2011).

           Metal-particle-assisted hydrofluoric acid etching of silicon (Si) is a unique method of preparing Si nanopores with metal nanoparticles at the bottom of each nanopore. Autocatalytic electroless deposition, which is the conventional method to metalize nonmetallic substrates, requires catalyzation of the substrates before deposition. For Si substrates, obtaining adhesive metal films with conventional catalyzation pretreatments is difficult. We recently developed a new method to produce adhesive metal films on Si substrates using catalytic nanopores that consists of three steps: 1) displacement deposition of metal nanoparticles; 2) Si nanopore formation by metal-particle-assisted hydrofluoric acid etching; and 3) autocatalytic electroless deposition of metal films. In this study, the new method is applied not only to previously reported p-Si (100) 1 Ω cm substrates but also to various Si substrates, such as low and high resistibility, p- and n-types, (100), (111), and (110) planes, and single-, multi- and micro-crystalline substrates. Adhesive and bright metal films were formed on all Si substrates.

 

(60) Rh電析膜中の水素誘起超多量空孔の影響, 福室直樹,成田真嗣,八重真治,松田 均, 表面技術, 62(6), 317-318 (2011)

              Rh電析膜中の水素の存在状態とその効果について検討した。水素はRh膜中に過飽和に固溶して、多量の空孔、双晶、積層欠陥およびナノボイド等の欠陥構造を形成して存在する。水素誘起超多量空孔からの水素の脱離に伴う拡散促進効果によって、低温でRh膜の再結晶現象が認められた。

 

(61)  Surface-Activation Process for Electroless Deposition of Adhesive Metal (Ni-B, Cu) Films on Si Substrates Using Catalytic Nanoanchors, Shinji Yae, Keisuke Sakabe, Naoki Fukumuro, Susumu Sakamoto, and Hitoshi Matsuda, J. Electrochem. Soc., 158(9), D573-577 (2011).

              Autocatalytic electroless deposition, which is a conventional method to metalize nonmetallic substrates, requires catalyzation of substrates before deposition. For silicon (Si) substrates, obtaining adhesive metal films with conventional catalyzation pretreatment is difficult. In this study, we develop a new surface-activation process for the direct electroless deposition of adhesive metal films on Si substrates that consists of three steps: (1) metal nanoparticle formation by electroless displacement deposition; (2) Si nanopore formation by metal-particle-assisted hydrofluoric acid etching; and (3) metal filling in nanopores and metal-film formation on the whole Si surface by autocatalytic electroless deposition. The metal nanorods in the Si act as catalytic nanoanchors to promote autocatalytic electroless metal deposition and improve the adhesion of the metal films on the Si substrates. This process was successfully applied not only to nickel-boron alloy but also to copper film deposition on Si substrates.

 

(62) Influence of hydrogen on room temperature recrystallisation of electrodeposited Cu films: thermal desorption spectroscopy, N. Fukumuro, T. Adachi, S. Yae, H. Matsuda and Y. Fukai, Trans. Inst. Met. Finish., 89(4), 198-201 (2011).

              The mechanism of recrystallisation observed at room temperature in electrodeposited Cu films has been examined in light of the enhancement of metal atom diffusion by hydrogen induced superabundant vacancies. Thermal desorption spectroscopy revealed that Cu films electrodeposited from acid sulphate bath containing some specific additives showed a pronounced peak, which was ascribed to the break-up of vacancyhydrogen clusters. The amount of desorbed hydrogen was comparable to that of vacancy type clusters estimated in previous positron annihilation experiments. The grain size of Cu films increased as hydrogen desorption proceeded. Such grain growths were not observed in the films deposited from the baths without additives. These results indicate that the room temperature recrystallisation of electrodeposited Cu films is caused by hydrogen induced superabundant vacancies.

 

(63) 無電解ニッケルめっき液のゼロエミッションリサイクル, 高上豪倫, 大藪 剛, 川上 浩, 福室直樹, 八重真治, 松田 均, 表面技術, 62(12), 712-716 (2011).

              A new recycling electroless nickel plating system has been developed using nickel hypophosphite as the source of metallic ions and as a reducing agent. In the system, phosphite ions, which are deleterious for the plating process, are fixed as the precipitate of calcium phosphite. Then they are removed from the solution. During repetitive plating operations, we maintained the plating solution composition and pH as almost constant values. The quantitative change of the reaction products provides theoretical confirmation that the system can be characterized as a zero-emission-type recycling model.

 

(64) アルゴンプラズマエッチングがシリコンへの金属微粒子無電解置換析出に及ぼす影響

藤原良太, 萩原泰三, 松田貴士, 江籠卓馬, 福室直樹, 八重真治, 松田 均

表面技術, Vol.63, pp.581-584 (2012)

Fine metal particles can be formed on Si by electroless displacement deposition, in which Si wafers are simply immersed into a metal-salt solution containing HF. Depending on the kind of metal and the surface condition of Si substrates, the particle density of deposited metal varies widely. Especially, Pt particle density greatly changes according to the Si surface condition. In this study, we investigate the influence of Ar-plasma etching of Si on the Pt particle density. Single crystalline n-Si (100) wafers were etched by Ar plasma using a radio frequency glow discharge spectrometer. An amorphous Si layer was formed on etched Si surfaces. Pt particles, with the particle density of four hundred times higher than that for non-etched Si wafers, were deposited by immersing Ar-plasma-etched Si wafers in a H2PtCl6 solution containing HF. The Pt particle density was decreased by removing the amorphous layer and as well as chemical etching of single-crystalline Si wafer. It was proved that the influence of the Ar-plasma-etching extended at least 0.5 μm to the interior of single-crystalline Si beneath the amorphous layer.

 

(65) ジニトロスルファト白金(U)酸浴から電析したPt膜中の水素

久永尚哉, 福室直樹,八重真治,松田 均

表面技術, Vol.63, pp.596-597 (2012)

著者らは金属の電気めっきの際に生じる水素共析について系統的に調べているが、本研究においては、ジニトロスルファト白金酸めっき液での電気めっきにおけるPt中の水素について調べた。めっき基材としてTiを用い、ジニトロスルファト白金酸(H2Pt(NO2)2SO4)水溶液でPtを約1μm電着させた。このPt膜中の水素の熱分離挙動および熱処理後のミクロ組織観察を透過型電子顕微鏡を用いて実施した。これらの実験から、ジニトロスルファト白金酸を用いたPtめっきではめっき層中に大量の水素が導入されており、熱処理によって水素の離脱が生じ、金属原子の拡散の活発化により結晶粒成長が進行することが明らかとなった。

 

(66) Catalytic activity of noble metals for metal-assisted chemical etching of silicon

S. Yae, Y. Morii, N. Fukumuro, H. Matsuda

Nanoscale Res. Lett., Vol.7, 352(pp.1-5) (2012)

Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structure: photoillumination during etching, oxidizing agents, and metal particles. In this study, the influence of noble metal particles, silver, gold, platinum, and rhodium, on this etching is investigated under dark conditions: the absence of photogenerated charges in the silicon. The silicon dissolution is localized under the particles, and nanopores are formed whose diameters resemble the size of the metal nanoparticles. The etching rate of the silicon and the catalytic activity of the metals for the cathodic reduction of oxygen in the hydrofluoric acid solution increase in the order of silver, gold, platinum, and rhodium.

 

(67) シリコン基板上に形成した金属ナノロッドの太さと無電解めっき膜の密着性

榎本将人, 八重真治, 阪本進, 福室直樹, 松田均

表面技術, Vol.63, pp.781-783 (2012)

著者らはこれまで、Si基板上への金属膜の形成において金属ナノロッドを利用することで密着性の向上を図ることに成功している。本報告においては、形成する金属ナノロッドの太さと形成する無電解めっき膜の密着性の関係を調べた。Si単結晶基板に対し、0.15 M HF1 mM AgNO3水溶液浸漬によるAgナノ粒子の形成、7.3 M HF水溶液への浸漬によるナノ孔の形成、および無電解メッキによるNiB膜の形成を行なった。テープを用いた密着性試験およびミクロ組織観察を実施した。これらの実験から、0.15 M HF1 mM AgNO3水溶液浸漬時間の増加とともにナノ粒子の粒径は大きくなり、これは密着性を向上させることにつながったことを明らかにした。

 

(68) Metal-Assisted Chemical Etching of Silicon Using Oxygen as an Oxidizing Agent: Influence of HF Concentration on Etching Rate and Pore Morphology Metal-Assisted Silicon Dissolution

S. Yae, Y. Morii, M. Enomoto, N. Fukumuro, H. Matsuda

ECS Trans., Vol.50, No.37, pp.31-36 (2013)

Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a HF solution without electrical bias. We have been studying this etching using dissolved oxygen as an oxidizing agent and recently reported that the catalytic activity of noble metal particles including silver, gold, platinum, and rhodium, influences the cathodic reduction of oxygen and controls the etching rate. In this paper, we investigate the influence of the HF concentration on the etching rate and the pore morphology. In the case of high HF concentration, the etching rate is independent of the HF concentration and depends on the oxygen concentration and the catalytic activity of the metal particles. In the low HF concentration case, the etching rate depends on the HF concentration and is independent of the oxygen concentration and the catalytic activity. The pore morphology is also changed by the HF concentration.

 

(69) Hydrogen in Platinum Films Electrodeposited from Dinitrosulfatoplatinate Solution

N. Hisanaga, N. Fukumuro, S. Yae, H. Matsuda

ECS Trans., Vol.50, No.48, pp.77-82 (2013)

The influence of hydrogen on the microstructure of Pt films electrodeposited from a dinitrosulfatoplatinate(II) solution was investigated with thermal desorption spectroscopy, X-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Two pronounced desorption peaks were observed in the thermal desorption spectrum of hydrogen from the Pt films. The total amount of desorbed hydrogen in the range from 300 to 1100 K in the atomic ratio (H/Pt) was 0.1. The deposited Pt film consisted of fine grains (10 nm) and many nano-voids. The lattice parameter of the Pt grains was lower than that of bulk Pt. Drastic grain growth and reduction in the lattice contraction occurred from heat treatment at a temperature corresponding to the first hydrogen desorption peak of 500 K.

 

(70) AFM Analysis for Initial Stage of Electroless Displacement Deposition of Silver on Silicon Surface

T. Ego, T. Hagihara, Y. Morii, N. Fukumuro, S. Yae, H. Matsuda

ECS Trans., Vol.50, No.52, pp.143-153 (2013)

We deposit fine metal particles on silicon (Si) by a displacement reaction, which is the immersion of Si wafers into a metal-salt solution containing hydrofluoric acid, that consists of a local cathodic reduction of metal ions and a local anodic dissolution of Si. In this study, the displacement deposition of silver (Ag) nanoparticles on the Si(111) surface with an atomic step-terrace structure is investigated by atomic force microscopy. Ag particles are uniformly deposited on the Si surface without influence of the step-terrace structure. The particle density of the deposited Ag decreases and then increases with immersion times between 1 and 15 s. The step-terrace structure disappears and nanoholes are formed by an immersion time of 15 s. We propose a model of Ag particle density and Si surface changes with time.

 

(71) Electroless Metallization of Silicon Using Metal Nanoparticles as Catalysts and Binding-Points Electrodeposition and Semiconductor Metallization

S. Yae, M. Enomoto, H. Atsushiba, A. Hasegawa, C. Okayama, N. Fukumuro, S. Sakamoto, H. Matsuda

ECS Trans., Vol.53, No.6, pp.99-103 (2013)

Gold nanoparticles on silicon work not only as catalysts to initiate autocatalytic electroless metal deposition but also as bindingpoints between the deposited metal film and the silicon surface. Conventional catalysts of autocatalytic electroless metal deposition, such as palladium and silver, require heat treatments or anchor formation to obtain practical adhesion of deposited metal films on silicon. Gold nanoparticles can directly produce adhesive metal films on flat silicon surfaces without any treatments. Crosssectional transmission electron microscopic observation reveals that gold nanoparticles form an alloy with silicon at the room temperature. This alloy is expected to improve the adhesion of metal film on silicon.

 

(72) Noble Metal Recovering by Electroless Displacement Deposition on Silicon Powder

K. Fukuda, S. Yae, N. Fukumuro, S. Sakamoto, H. Matsuda

ECS Trans., Vol.53, No.19, pp.69-76 (2013)

We developed a low-cost, efficient method to recover all noble metals including gold, silver, palladium, rhodium, platinum, osmium, ruthenium, and iridium from aqueous solutions by simply adding hydrofluoric acid (HF) and silicon (Si) powder. The recovery rate depends on the specific surface area of Si, the HF concentration, and the solution temperature. Our method selectively recovers noble metals and copper from a mixture solution of noble and base metal ions, such as nickel, cobalt, and iron, and obtains pure noble metal powder by dissolving Si. The Si powder and the HF solution are expected to be supplied from semiconductor industries, such as the sawdust Si of wafering or dicing and the waste HF solution of wafer cleaning or etching. This new method recovers noble metals from waste (urban mines) using other waste; it also has green electroless deposition.

 

(73) 前処理によりシリコン表面に形成された金属ナノロッドの長さと無電解めっき膜の密着性

榎本将人、八重真治、阪本進、福室直樹、松田均

表面技術、Vol.64pp.682-684 (2013)

We have developed a surface-activation process for the direct electroless deposition of adhesive metal films on Si substrates. This process forms metal nanorods in Si by using electroless displacement metal nanoparticle deposition, metal-nanoparticle-assisted HF etching of Si, and autocatalytic electroless Ni deposition. The adhesion of metal films increases with metal nanorod length.

 

(74)Hydrogen-Induced Enhancement of Atomic Diffusion in Electrodeposited Pd films

N. Fukumuro, M. Yokota, S. Yae, H. Matsuda, Y. Fukai*

*Institute of Industrial Science, The University of Tokyo

J. Alloys Compd., Vol.580 S1, pp.55-57 (2013)

The hydrogen-induced enhancement of atomic diffusion in electrodeposited Pd films on Cu substrate has been investigated with thermal desorption spectroscopy, X-ray diffraction, and transmission electron microscopy. The hydrogen content in Pd films (x = H/Pd) was 2.27.7×10-2 and decreased with time at room temperature. For Pd films with lower hydrogen contents (x 4.0×10-2), lattice contraction and grain growth proceeded as hydrogen desorption proceeded. For Pd films with higher hydrogen contents (x 5.8×10-2), fine grains became large columnar grains, and a large-grained Cu-Pd interlayer was formed by interdiffusion between the Cu substrate and the Pd film.

 

(75) Contact Resistance Measurements for Electrodes on Silicon Prepared by Autocatalytic Electroless Metallization Using Metal Nanoparticles

Y. Orita, H. Atsushiba, M. Enomoto, T. Kimura**, N. Fukumuro, H. Takagami*, K. Kato*, S. Sakamoto, M. Hirata, and S. Yae

*Murata Co., Ltd.

**Japan Fine Tech Co., Ltd.

ECS Trans., Vol.61, No.10, pp.25-29 (2014)

Recently, we reported on autocatalytic electroless metallization of silicon using gold nanoparticles. This technology is expected to be a useful, low-cost, and reliable method to form electrodes on silicon for several devices, such as solar cells and power devices. For the fabrication of electrodes, it is important that the resistance, consisting of the sheet resistance of the metal patterns and the contact resistance between the metal and silicon, is low. In this study, we measure the contact resistance of metal electrodes on silicon prepared by autocatalytic electroless metallization using gold nanoparticles. The transfer length method is suitable to evaluate the contact resistance between electrolessly plated nickelphosphorus alloy thin films and silicon. The values obtained for the contact resistivity decrease as the film thickness increases from 0.5 to 2.3 μm. This decrease is caused by the decrease of the sheet resistance of the metal films. Reliable values for the contact resistivity were determined to be 0.9 and 1.2 mΩ cm2 for p+- and n+-doped wafers, respectively. The contact resistivity depends on the gold nanoparticle coverage.

 

(76) Adhesion and Interfacial Structure of Metal Film Electrolessly Deposited on Si Using Au Nanoparticles as Catalysts

H. Atsushiba, Y. Orita, S. Sakamoto, N. Fukumuro, and S. Yae

ECS Trans., Vol.61, No.10, pp.9-13 (2014)

We developed a new surface-activation process for autocatalytic electroless metallization of silicon using gold nanoparticles. The gold nanoparticles provide much higher adhesion of electrolessly deposited nickel-boron alloy films on silicon substrates than do silver and palladium nanoparticles. TEM observation and XPS analysis indicate that the electrolessly deposited nickel-phosphorus alloy film directly contacts the gold nanoparticles, silicon-gold metallic alloy is formed at the interface between the silicon substrate and the gold nanoparticles even at room temperature, and an amorphous layer exists between the metals and silicon substrate.

 

(77) Electroless Displacement Deposition of Noble Metal on Silicon Powder for Recovering from Urban Mines

K. Fukuda, N. Fukumuro, S. Sakamoto, and S. Yae

ECS Trans., Vol.61, No.10, pp.1-7 (2014)

We developed a simple recovery method of all noble metals from aqueous solutions by adding silicon (Si) powder and fluoride. This method is expected to be low-cost, because the Si powder and the fluoride solution can be supplied from semiconductor industries, such as the sawdust Si of wafering or dicing and the waste hydrofluoric acid solution of wafer cleaning or etching. In this study, we investigated the recovery of noble metals using a lowtoxic agent instead of a toxic hydrofluoric acid, or sawdust Si powder. This method can recover noble metals using ammonium fluoride or sodium fluoride. The recovery rate with sawdust Si is as high as that using pure Si powder. We found that the recovery of noble metals by this method from aqueous solutions including aqua regia is also possible.

 

(78) 単結晶シリコン上へ無電解置換析出する白金微粒子の数密度

萩原泰三,松田貴士,福室直樹,八重真治

表面技術、Vol.65pp.495-498 (2014)

Immersing of Si into a solution containing metal-salt and HF deposits fine metal particles onto the Si surface by the electroless displacement deposition. The particle density of deposited metal onto the surface varies widely by kinds of metal-salt and pretreatments of Si. Especially, the particle density of Pt depends a great deal on the pretreatments of Si. In this study, we have investigated the process of Pt electroless displacement deposition. Single crystalline n-Si (100) wafers were pretreated by following three different methods: immersion in a mixture of HF, HNO3, CH3COOH and H2O (3:5:3:22 in volume) (CP4A), ordinary RCA method, and oxidization of Si surface by immersion in HNO3 after RCA (RCA + HNO3). The electroless displacement deposition of Pt particles onto Si surface proceeds by immersing Si wafers into a H2PtCl6 solution containing HF for 5-900 seconds. On the Si surface pretreated by the CP4A method, Pt particles deposited in the progressive mode. For the RCA method, Pt particles deposited in two-stage progressive mode which is separated at 180 seconds. For the pretreatment of RCA + HNO3, Pt particles deposited in two-stage progressive mode separated at 120 seconds. These two-stage progressive modes are explained to be caused by local anodic reaction which dissolved and roughed Si surface in electroless displacement deposition solution. However, regardless of the pretreatment method, Pt particles were deposited in the order of 109 cm-2 in particle density by the deposition for 900 seconds.

 

(79) Hydrogen-Induced Superabundant Vacancies in Electrodeposited Fe-C Alloy Films

N. Fukumuro, S. Kojima, M. Fujino, Y. Mizuta, T. Maruo, S. Yae, Y. Fukai*

*Institute of Industrial Science, The University of Tokyo

J. Alloys Compd., Vol.645 S1, pp.404-407 (2015)

Fe-C alloy films containing supersaturated C and H were prepared by electrodeposition, and investigated for the hydrogen behavior in annealing processes utilizing X-ray diffraction and thermal desorption spectroscopy. The H content xH (xH = H/Fe) in the films increased from about 0.031 in pure Fe to about 0.36 in Fe-C alloy (xC = C/Fe = 0.073) in proportion to the C content. The lattice contraction of about 0.2% was observed in pure Fe films, whereas the lattice expansion increasing with C content was observed in Fe-C alloy films. Both the lattice contraction of the Fe films and the lattice expansion of the Fe-C alloy films were decreased as H was desorbed during heat treatments. The atomistic structure of vacancy-hydrogen and vacancy-carbon-hydrogen clusters in Fe-C alloy films is discussed, based on these experimental results.

 

(80) 電析Cu膜における水素誘起粒成長

吉田裕輝, 山崎貴昭, 安達貴良, 福室直樹, 八重真治, 深井 有*

*東京大学生産技術研究所

日本金属学会誌、Vol.73pp.78-81 (2015)

We proposed that the grain growth observed in electrodeposited Cu films at room temperature is caused by hydrogen-induced superabundant vacancy-hydrogen clusters. In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different types of plating baths. The Cu films were electrodeposited from an acid sulfate bath, an acid sulfate bath containing chloride ion, polyethylene glycol, and bis(3-sulfopropyl)disulfide (additive-containing bath), a pyrophosphate bath, and a chloride bath containing citric acid. Thermal desorption spectroscopy revealed that extremely high concentration of hydrogen is contained in the Cu films deposited from the additive-containing bath and the chloride bath. The room-temperature grain growth was observed in these Cu films with passage of time after deposition, concurrently with hydrogen desorption. Such grain growths were not observed in the Cu films with low hydrogen content deposited from the acid sulfate bath and the pyrophosphate bath. The changes in crystal orientation and internal stress during the grain growth of the Cu films differed between the additive-containing bath and the chloride bath. These results suggest that the room-temperature-grain growth was induced by the co-deposited hydrogen in films.

 

(81) Electrochemical Quartz Crystal Microbalance Study of The Electrodeposition of Platinum

T. Hagihara, K. Yaori, K. Iwakura, N. Fukumuro, and S. Yae

Electrochim. Acta, Vol.176 , pp.65-69 (2015)

The electrodeposition of Pt from aqueous solutions of K2PtCl4 (Pt(II)), H2PtCl6 (Pt(IV)), and a mixture of Pt(II) and Pt(IV) was studied using the electrochemical quartz crystal microbalance (EQCM) method. Pt deposition and cathode current flow began at the same potential in the Pt(II) solution. On the other hand, in the Pt(IV) solution, the cathode current increased at a more positive potential followed by Pt deposition at a more negative potential than in the Pt(II) solution. This difference in the potentials is due to the reduction reaction of Pt(IV) to Pt(II). Thus, Pt deposition in the Pt(IV) solution occurred in two potential ranges. In the first range, which was more positive than the second one, Pt was deposited via the reduction of Pt(II) to Pt(0). In the second range, direct deposition from Pt(IV) to Pt(0) proceeded, but was followed by hydrogen adsorption, which inhibited further Pt deposition.

 

(82) Catalytic Activity of Ru for Metal-Assisted Etching of Si

D. Sadakane, K. Yamakawa, N. Fukumuro, and S. Yae

ECS Trans., Vol.69, No.2, pp.179-184 (2015)

Metal-assisted etching of Si is an electroless method that can produce porous Si by immersing metal-modified Si in a HF solution without electric bias. We reported that the etching rate of noble metal-modified Si in a simple HF solution including oxygen under dark conditions depended on the catalytic activity of metal for oxygen reduction. Only palladium exhibits high activity for the etching under dissolved oxygen-free and dark conditions. In this study, the catalytic activity of Ru for the etching of Si has been investigated. Ru nanoparticles are electrodeposited on Si substrates. Electroless displacement deposition using RuCl3 solution including HF can form Ru nanoparticles not on mirror-polished n-Si substrate but on roughed one. The etching rate of Ru-particledeposited Si is similar to that of Rh case which is changed with dissolved oxygen concentration. On the roughed Si substrates, the Ru nanoparticles assist the etching even under oxygen-free and dark conditions.

 

(83) Optical Property of Porous Silicon Produced By Metal-Assisted Etching

K. Yamakawa, S. Sakamoto, N. Fukumuro, and S. Yae

ECS Trans., Vol.69, No.2, pp.185-191 (2015)

Antireflection of Si surface is an important technology to increase the photocurrent density of solar cells. Recently, porous Si has been researched for replacing Si nitride which is common material of antireflective coating (ARC). In this study, we have investigated the optical properties of porous Si thin films, thinner than doped layers for p-n junction formation of Si solar cells, produced by metal-assisted etching. The structure of porous Si is changed with the size of catalytic Ag nanoparticles, composition of etching solution, and etching time. The reflection of porous film formed Si wafers is much lower than that of mirror polished wafers. Reflectance spectra and ellipsometric analysis indicate that the thin porous Si films act as optical films and they are expected to function as suitable ARC for crystalline Si solar cells.

 

(84) Effect of Epitaxial Growth of Gold Nanoparticles on Si Substrates on Adhesion of Electrolessly Deposited Metal Films

N. Yamada, H. Atsushiba, S. Sakamoto, N. Fukumuro, and S. Yae

ECS Trans., Vol.69, No.39, pp.59-63 (2015)

Electrolessly deposited metal films on silicon substrates using gold nanoparticles as catalysts yield much higher adhesion than that by using palladium or silver nanoparticles. In this study, the structure of the gold nanoparticles is analyzed by X-ray diffraction and transmission electron microscopy. Single crystalline gold nanoparticles are epitaxially deposited on silicon substrates and silicon-gold alloy is formed at the interface. Those epitaxially grown gold nanoparticles cause the high adhesion of electrolessly deposited nickel films on silicon substrates.

 

ベストペーパー賞受賞

(85) シリコンウェーハ上への直接無電解めっき

八重真治, 山田直輝, 阪本 進, 福室直樹

MES2015(第25回マイクロエレクトロニクスシンポジウム)論文集, pp.63-66 (2015)

Gold nanoparticles are produced on silicon substrates by electroless displacement deposition simply immersing in a gold salt solution including hydrofluoric acid. Such gold nanoparticles work not only as catalysts to initiate autocatalytic electroless metal deposition but also as bindingpoints between the deposited metal film and the silicon surface. Gold nanoparticles can directly produce adhesive metal films on silicon surfaces without any treatments. For the fabrication of electrodes on such silicon devices as solar cells and power devices, it is important that the contact resistance between the metal and silicon is low. The contact resistivity between electrolessly deposited nickel-phosphorus alloy thin films and p+- and n+-doped silicon substrates are 0.9 and 1.2 mΩ cm2, respectively.

 

(86) アルゴンプラズマエッチングを施した単結晶シリコン上に無電解置換析出する白金微粒子の数密度

萩原泰三, 藤原良太, 松田貴士, 山川加能, 福室直樹, 八重真治

表面技術、Vol.67pp.34-39 (2016)

By immersion of silicon into a solution containing metal-salt and hydrofluoric acid, fine metal particles are deposited onto the silicon surface by electroless displacement reaction. The particle density of deposited metal varies widely depending on the kind of metal and the surface condition of silicon substrates. The platinum particle density changes to an especially large degree according to silicon surface conditions. This study revealed the relation of deposition time to platinum particle density deposited by electroless displacement deposition on argonplasma-etched Si surfaces. Single-crystalline n-Si(100)wafers were chemically pretreated and were then etched with argon plasma using a radiofrequency glow discharge spectrometer. The electroless displacement deposition of platinum particles onto the silicon surface proceeds by immersion of silicon wafers into a hexachloroplatinic(IV)acid solution containing hydrofluoric acid. Platinum particles were deposited in the progressive mode until 450 s, and reached 1011 cm-2. The particle density was decreased by immersion longer than 450 s, and was maintained at 1010 cm-2 after 900 s. Dimples appeared on the silicon surface by immersion for 600 s and longer. Dimples were formed by local anodic dissolution of silicon under the platinum particles. The initial increase and posterior decrease in the particle density are explained, respectively, as the influence of argon-plasma etching and the dissolution of the influenced region of a silicon wafer.

 

(87) 電析Cu 膜の室温粒成長に及ぼす水素の影響

福室直樹, 吉田裕輝, 山崎貴昭, 深井 有*, 八重真治

*東京大学生産技術研究所

日本金属学会誌、Vol.80pp.736-739 (2016)

The influence of co-deposited hydrogen on the room-temperature grain growth of electrodeposited Cu films was investigated. The films were prepared from ethylenediamine (EDA)-complex and ethylenediaminetetraacetic acid (EDTA)-complex baths and examined with respect to hydrogen concentration, the initial microstructure, residual stress and impurities. Thermal desorption spectroscopy revealed that extremely high concentrations of hydrogen was contained in the Cu films deposited from both the EDA- and EDTA-complex baths. The room-temperature grain growth of these Cu films proceeded after deposition and concurrently with the gradual desorption of hydrogen. During the grain growth, the (111)-oriented texture remained almost unchanged but the tensile stress decreased. Compared with the Cu films electrodeposited from other types of baths, temporal changes in crystal orientation and residual stress varied in the different baths, however grain growth proceeded with a decrease in hydrogen as previous. These results indicate that the primary cause of room-temperature grain growth of electrodeposited Cu films is hydrogen-induced superabundant vacancies.

 

(88) ナノホールアレイを用いた反射防止によるシリコン太陽電池の高効率化

山川加能,榎本将人, 阪本 進, 八重真治

表 面技術、Vol.67pp.689-670 (2016)

Antireflection of a silicon surface is an important means of increasing the photocurrent density and thereby improving solar cell conversion efficiency. We have produced thin nanohole arrays on silicon solar cells using metal-assisted-etching with electrolessly deposited silver nanoparticles. The nanohole array acts as an optical film, decreasing silicon surface reflectance, increasing photocurrent, and causing no damage to the pn-junction.

 

(89) SiCへの直接無電解めっき

山田直輝,福田健二, 阪本 進,福室直樹, 八重真治

MES2016(第26回マイクロエレクトロニクスシンポジウム論文集pp.83-86 (2016)

We have developed a novel method of direct electroless plating on single crystalline 4H-silicon carbide (SiC) wafers by using gold nanoparticles as catalysts. Gold nanoparticles on SiC are produced by immersing in a tetrachloroauric(III) acid solution containing hydrofluoric acid or potassium hydroxide under UV-light illumination using a Hg-Xe short arc lamp. The gold-nanoparticle-deposited SiC wafers can initiate autocatalytic electroless plating of nickel-phosphorous (Ni-P) alloy. Uniform Ni-P films are produced on the SiC wafers. The adhesion of the Ni-P films formed by the present method is as high as no peeling occurs by a tape test without any further treatment such as heat treatment. The gold nanoparticles on SiC work not only as catalysts to initiate autocatalytic electroless deposition but also as binding-points between the deposited metal film and the SiC surface.

 

(90) Influence of Hydrogen Adsorption on Electrodeposition of Platinum from Chloro Complex Solution

A. Yokoyama, S. Karatsu, M. Sumikawa, N. Fukumuro, and S. Yae

ECS Trans., 75(52) pp.55-60 (2017)

The influence of hydrogen adsorption on the electrodeposition of platinum was investigated using an electrochemical quartz crystal microbalance (EQCM) method and thermal desorption spectroscopy (TDS). Three types of hydrogen adsorption were observed in a tetrachloroplatinate(II) solution by the EQCM method: UPD-H1, UPD-H2, and OPD-H in order from positive to negative potential. Platinum films were electrodeposited potentiostatically at 0 for UPD-H1, -0.1 and -0.2 for UPD-H2, and -0.3 V vs. Ag/AgCl for OPD-H. The amount of hydrogen desorbed by TDS, that is, the hydrogen incorporated into the films by electrodeposition, depended on the deposition potential. At the potential for UPD-H1, no hydrogen was incorporated into the bulk of the platinum films. At the UPD-H2 potential, hydrogen was uniformly incorporated in the platinum films at the content of ca. 0.02 in an atomic ratio of H/Pt. At the OPD-H potential, a fairly large amount of hydrogen, 0.1 of content, was incorporated uniformly in the platinum films.

 

(91) Displacement deposition of gold nanoparticles and electroless deposition of nickel films on silicon-carbide (4H-SiC) wafers

K. Fukuda, N. Yamada, D. Sadakane, S. Sakamoto, N. Fukumuro and S. Yae

Trans. Inst. Met. Finish.95(4) pp.203-206 (2017)

Metallisation of silicon carbide (SiC) wafers is a key technology for producing efficient power devices. Conventional autocatalytic electroless deposition cannot produce adherent metal films directly on SiC substrates. The authors applied their recently developed surface-activation process for electroless metal-film deposition on silicon wafers to SiC wafers. Gold nanoparticles were produced on 4H-SiC substrates by displacement deposition after immersing the substrates in a tetrachloroauric(III) acid solution that includes hydrofluoric acid or potassium hydroxide. The size and the particle density of the deposited gold are changed with deposition parameters such as the surface condition of the substrates, the solution composition, and the UV-light illumination. The gold nanoparticles work not only as catalysts to initiate autocatalytic electroless deposition but also as binding-points between the metal film and the SiC surface. Adherent and uniform nickel-phosphorus alloy films are produced on such SiC substrates by autocatalytic electroless deposition without any further treatments.


 

解説・著書など
(1)
高効率低コストな新型太陽電池(白金超微粒子による n-Si光電極表面の修飾), 八重真治, 化学と工業, Vol. 51, 199 (1998)

(2) シリコン半導体電極を用いる高効率湿式太陽電池 −金属微粒子による表面修飾−, 八重真治, 松田 均, 中戸義禮, 溶融塩および高温化学, 43(1), 64-76 (2000).

(3) めっき技術の湿式太陽電池への応用 −半導体電極上への金属微粒子析出−, 八重真治, 松田 均, 中戸義禮, 表面科学, 22(6), 357-363 (2001).

(4) 太陽光水分解・湿式太陽電池, 八重真治,福室直樹,松田 均, マテリアルインテグレーション, 19(2), 21-25(2006).

(5) Electrochemical Deposition of Metal Nanoparticles on Silicon, Shinji Yae, Naoki Fukumuro, and Hitoshi Matsuda, Progress in Nanoparticles Research, Edited by C. T. Frisiras, Nova Science Publishers, Inc., New York, Ch. 5, pp. 117-135 (2008).

(6) Water splitting to produce solar hydrogen using silicon thin film,  S. Yae, SPIE Newsroom, http://newsroom.spie.org/x5820.xml (2007).

(7) 「シリーズ研究室紹介1」 兵庫県立大学 大学院工学研究科 物質系工学専攻 物質・エネルギー部門 材料表面工学研究グループ, 表面技術, 60(1), 41-42 (2009).

(8) Porous Silicon Formation by Metal Particle Enhanced HF Etching, Shinji Yae, Naoki Fukumuro, and Hitoshi Matsuda, Electroanalytical Chemistry Research Trends, Edited by K. Hayashi, Nova Science Publishers, Inc., Hauppauge, NY, Ch.4, 107-126 (2009).

 (9) 「会員紹介(大学・研究機関)」 兵庫県立大学 大学院工学研究科 物質系工学専攻 材料表面工学研究グループ, めっき技術, 22(12), 35-37 (2009)

(10) 創立60周年記念号 踏み出そう!新たな一歩 第1部 座談会U 表面技術に見る夢,新井 進,上田幹人,大貝 猛,蒲生西谷美香,邑瀬邦明,八重真治,松原 浩,表面技術61(2), 95-107 (2010).

(11) 創立60周年記念号 踏み出そう!新たな一歩 第2部 最近の技術の進歩 2.4 シリコンのアノード酸化,八重真治,表面技術61(2), 162-163 (2010).

(12) 「研究紹介」 シリコン上への高密着性無電解めっき膜形成とめっき膜に含まれる水素の解析, 八重真治, 福室直樹, 松田 均, めっき技術, 24(6), 43-48 (2011).

(13) Solar to Chemical Conversion Using Metal Nanoparticle Modified Low-Cost Silicon Photoelectrode, Shinji Yae, in Solar Cells - New Aspects and Solutions, Edited by Leonid Kosyachenko, InTech, Rijeka, Croatia, Ch. 11, pp.231-254 (2011).  open-access: http://www.intechopen.com/articles/ show/title/solar-to-chemical-conversion-using-metal-nanoparticle-modified-low-cost-silicon-photoelectrode

 (14) めっき膜中の水素の挙動

福室直樹,八重真治,松田 均,深井 有*

*東京大学生産技術研究所

表面技術, Vol.63, pp.24-28 (2012)

めっきプロセスにおいては電気化学反応により水素の発生が起こるが、発生した水素はめっき液から大気へ放出されるだけでなく、めっき層中へも侵入する。この水素がめっき層の特性に種々の影響を与えることは経験的に良く知られていることであるが、系統的な解明はこれまで十分になされて来なかった。近年、この問題に対して研究する動きがあり、本稿においてもその一部を紹介した。Ni電析膜中への水素の共析と存在状態およびめっき膜の構造への水素の影響について示した。前者においては、めっき析出過程における水素の挙動(めっき液中への放出、めっき膜中への侵入、基板への侵入および透過)について示した。後者では、Cu電析膜の室温再結晶とRh電析膜の再結晶温度の低下の事例を示した。

 

(15) Metal Nanorods in Silicon: Electroless Preparation and Application for Adhesive Film Formation

S. Yae, S. Sakamoto, N. Fukumuro, H. Matsuda

Advances in Nanotechnology, Volume 10, Ch. 11., Edited by Zacharie Bartul and Jerome Trenor, Nova Science Publishers, Inc., Hauppauge, NY, pp.319-336 (2012)

Metal nanorods in a silicon (Si) matrix, are produced by an electroless process that consists of three steps: 1) metal nanoparticle formation on silicon by electroless displacement deposition using a metal salt solution containing hydrofluoric acid; 2) silicon nanopore formation by metal-particle-assisted hydrofluoric acid etching; and 3) metal filling in nanopores by autocatalytic electroless deposition. Silver nanoparticles produce silicon nanopores whose sizes are a few tens of nm in diameter and ca. 50 nm deep. Gold nanoparticles produce finer and straighter nanopores than the silver case. These nanopores are filled with a nickel, cobalt, copper, or those alloy by autocatalytic electroless deposition using dimethylamine-borane, phosphinate, or formaldehyde as a reducing agent. The important features of this process are the following: the size and length of metal nanorods can be controlled by changing the size of metal nanoparticles and the metal-particle-assisted etching time, respectively; and the metal nanoparticles, i.e., the initiation points of the autocatalytic metal deposition, are present on the bottoms of the silicon nanopores. Adhesive metal-film formation on silicon substrates is important for obtaining infallible electrical contacts in various devices. Autocatalytic electroless deposition, which is the conventional method for metalizing nonmetallic substrates, requires surface activation (catalyzation pretreatment) of substrates.

 

(16) シリコンの多孔質化による光反射防止

八重真治

応用電子物性分科会誌、Vol.19pp.18-23 (2013)

太陽電池の高効率化を目的としたシリコンのテクスチャー化による光反射防止について、アルカリエッチングや酸エッチング、金属微粒子援用エッチングなどの技術を説明した。金属微粒子援用エッチングは新しい技術で、銀微粒子と過酸化水素の組み合わせを中心に、単純だが多様な方法が提案されている。単結晶と多結晶とを問わず、従来法よりも高い光反射防止効果を低いコストで得られる方法として今後の展開が期待される.

 

(17) めっき膜中の水素の挙動解析

福室直樹、八重真治、松田 均

めっき技術、Vol.26No.5pp.1-4 (2013)

 

(18) 誌上セミナー 太陽電池とシリコンの表面処理 第1回 太陽電池の仕組み, 意義, 課題

八重真治

めっき技術、Vol.26No.6pp.59-70 (2013)

 

(19) 「機器紹介」 昇温脱離分析

福室直樹、八重真治

めっき技術、Vol.26No.6pp.101-105 (2013)

 

(20) ポーラスシリコンを用いる太陽電池

八重真治

表面技術、Vol.65No.1pp.12-17 (2014)

 

(21) 「誌上セミナー」 太陽電池とシリコンの表面処理 第2回 太陽電池の種類,シリコン太陽電池の高効率化

八重真治

めっき技術、Vol.27No.1pp.57-67 (2014)

 

(22) 「誌上セミナー」 太陽電池とシリコンの表面処理 第3回 ウェットプロセスによる表面処理

八重真治

めっき技術、Vol.27No.2pp.51-68 (2014)

 

(23) シリコン上への無電解置換析出を利用した貴金属回収

福田健二, 福室直樹, 八重真治

表面技術、Vol.66No.3pp.91-93 (2015)

 

(24) 金属援用エッチングによるポーラスシリコンの形成と光学特性評価

八重真治

表面技術、Vol.67No.10pp.533-537 (2016)

 

(25) Electroless Displacement Deposition of Gold from Aqueous Source -Recovery from Waste Electrical and Electronic Equipment (WEEE) using Waste Silicon Powder,Kenji Fukuda and Shinji Yae, in The Recovery of Gold from Secondary Sources, Edited by Syed Sabir, Imperial College Press, London, Ch. 3, pp. 57-94 (2016)

 



特許
(1) 松田 均, 八重真治, 清水範征: "無電解ニッケルめっき浴", 出願人 京セラ(株), 特開2001-214279 (2001).

(2) 松村道雄, 八重真治, 松田 均, 辻埜和也: "太陽電池用多結晶シリコン基板の製造方法", 出願人 関西TLO(株), 特許4049329(2007), US7135414(2006).

(3) 八重真治, 松田 均: "無電解めっきのセンシタイジング液及びそれを用いて絶縁体表面を金属化する方法", 特開2005-248287(2005).

(4) 八重真治, 平野達也, 松田 均: "シリコンを母材とする複合材料およびその製造方法", 特許5306670 (2013), WO2009/110428A1(2009).

(5) 八重真治, 平野達也, 松田 均: "複合材料及びその製造方法、並びにその製造装置", 特許5261475 (2013), 5281847 (2013),WO2009/110431A1 (2009), WO2010/021166A1 (2010).

(6) 八重真治: "金属の回収方法、複合材料、及び金属の回収装置", 特許5945429 (2016).

(7) 八重真治, 阪本 進: "太陽電池および太陽電池の製造方法", 特開2014-146712 (2014).

(8) 八重真治: "金属の回収方法及び金属の回収システム、並びに溶液の再生方法及び溶液の再利用システム", WO2015-163132 (2015).

(9) 八重真治: "金属の回収方法、金属回収装置、金属回収システム、及び金属粒子の製造方法", WO2016-163269 (2016).

(10)八重真治,阪本 進, 福田健二: "複合材料及びその製造方法、並びにその製造装置", 特開2017-17111 (2017).



学会・講演会での発表

ポスター賞受賞

田中裕三、福室直樹、八重真治、松田 均、深井 有、「電解Niめっき膜中の水素の挙動」、電気化学会第76回大会、2009年3月29日、京都市・京都大学、PS34

 

白金電析のQCM測定, 矢折和真,福室直樹, 八重真治, 松田 均, 56回マテリアルズ・テーラリング研究会, (2010)

電解Co-Ni合金薄膜中の水素挙動, 山田一輝, 福室直樹, 八重真治, 松田 均, 56回マテリアルズ・テーラリング研究会, (2010)

Si 上への白金ナノ粒子の電気化学析出におよぼすPt(IV) からPt(II) への還元反応の影響, 八重真治, 矢折和真, 福室直樹, 松田 均, 第20回日本MRS学術シンポジウム, Abs. D-07

白金電析のQCMによる解析, 矢折和真,福室直樹, 八重真治, 松田 均, 第12回関西表面技術フォーラム, pp.14-15 (2010)

ポスター賞受賞

電析Co-Ni合金膜の構造と水素 〜硫酸浴と塩化物浴の比較〜, 山田一輝, 福室直樹, 八重真治, 松田 均, 第12回関西表面技術フォーラム, p.68 (2010)

パラジウムを用いるシリコンの金属援用HFエッチング, 八重真治, 田代雅之, 森井友麻, 福室直樹, 松田 均, 表面技術協会第123回講演大会講演要旨集, p.198 (2011)

基調講演 めっき膜中の水素とその効果(U), 松田 均,八重真治,福室直樹, 深井 有*, *東京大学生産技術研究所, 日本金属学会第148回講演大会概要, p.64 (2011)

アモルファス合金めっき膜中の水素の存在状態 〜Ni-PおよびNi-Bめっき〜, 福室直樹, 竹本達哉, 八重真治, 松田 均, 深井 有*, *東京大学生産技術研究所, 日本金属学会第148回講演大会概要, p.65 (2011)

めっき膜の微細構造に及ぼす膜中水素の影響, 成田真嗣, 福室直樹, 八重真治, 松田 均, 深井 有*, *東京大学生産技術研究所, 日本金属学会第148回講演大会概要, p.64 (2011)

無電解Co-P/AuめっきとSn-Ag-Cuはんだの接合界面の構造解析, 神田佳美, 福室直樹, 八重真治, 松田 均, 藤波知之*, *日本エレクトロプレーティング・エンジニヤース, 日本金属学会第148回講演大会概要, p.179 (2011)

無電解析出させた銀ナノ粒子を触媒とするシリコン上へのナノアンカー形成, 八重真治, 坂部佳祐, 福室直樹, 阪本 進*, 松田 均, *日本オイコス, 電気化学会第78回大会講演要旨集, CD-ROM, 1J-10 (2011)

'Invited' Metal-Assisted Hydrofluoric Acid Etching of Silicon, S. Yae, N. Fukumuro, H. Matsuda, Villa Conference on Interactions Among Nanostructures, p. 127 (2011)

依頼講演 無電解めっきと太陽電池, 八重真治, 電気鍍金研究会講演 めっき技術, Vol. 24, No.4, pp.15-20 (2011)

Influence of hydrogen on room-temperature recrystallization of electrodeposited Cu films; thermal desorption spectroscopy, N. Fukumuro, T. Adachi, S. Yae, H. Matsuda, Y. Fukai*, *The University of Tokyo, 7th International Conference on Diffusion in Solids and Liquids, Book of Abs. (CD-ROM) pp.96-97 (2011)

金属ナノロッドをアンカーとするSi上への無電解めっき膜形成, 坂部佳祐, 榎本将人, 阪本進, 福室直樹, 八重真治, 松田均, 阪本 進*, *日本オイコス, 電気化学秋季大会講演要旨集, p.177 (2011)

クロロ錯体水溶液からの白金析出のEQCM解析, 矢折和真, 福室直樹, 八重真治, 松田均, 電気化学秋季大会講演要旨集, p.209 (2011)

Electroless Deposition of Adhesive Cu Film on Si Using Metal Nanoanchors, K. Sakabe, S. Sakamoto*, N. Fukumuro, S. Yae, H. Matsuda, *Nippon Oikos Co., Ltd., The 62nd Annual Meeting of the International Society of Electrochemistry, p.s03-P-023 (2011)

EQCM Study on Electrodeposition of Pt from Chloro Complex Solution, K. Yaori, N. Fukumuro, S. Yae, H. Matsuda, The 62nd Annual Meeting of the International Society of Electrochemistry, p. s10-P-010 (2011)

Gold nanoparticles on silicon catalysts and binding-points for electroless metal film coating, S. Yae, A. Hasegawa, C. Okayama, S. Sakamoto*, N. Fukumuro, H. Matsuda, *Nippon Oikos Co., Ltd., International Symposium on Renewable Energy & Materials Tailoring, p. 2B2 (2011)

AFM analysis for electroless displacement deposition of noble metal on silicon surface, T. Ego, N. Fukumuro, S. Yae, H. Matsuda, International Symposium on Renewable Energy & Materials Tailoring REMT2011, p. P1 (2011)

EQCM study on electrodeposition of platinum, K. Yaori, N. Fukumuro, S. Yae, H. Matsuda, International Symposium on Renewable Energy & Materials Tailoring REMT2011, p. P2 (2011)

めっき膜中の水素とその効果 (U), 福室直樹, 八重真治, 松田 均, 深井 有*, *東京大学生産技術研究所, ナノプレーティング研究会第38回例会, p.25 (2011)

ArプラズマエッチングしたSi上への貴金属粒子析出過程, 藤原良太, 福室直樹, 八重真治, 松田 均, 表面技術協会第124回講演大会講演要旨集, p.35 (2011)

Siの金属微粒子援用HFエッチングに及ぼす金属の溶存酸素還元触媒能の影響, 森井友麻, 福室直樹, 八重真治, 松田 均, 表面技術協会第124回講演大会講演要旨集, p.111 (2011)

はんだ接合界面へのCoめっきの応用, 神田佳美, 福室直樹, 八重真治, 松田 均, 藤波知之*, *日本エレクトロプレーティング・エンジニヤース, 第13回関西表面技術フォーラム, p.14 (2011)

優秀講演賞受賞    (紹介記事  めっき技術, 25(2), 41 (2012).)

Pt電析膜中の水素とその効果, 久永尚哉, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム, p.20 (2011)

紹介記事(注目講演)  めっき技術, 25(3), 45 (2012).

CuおよびNi電析膜中の水素と固体拡散, 安達貴良, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム, p.21 (2011)

紹介記事(注目ポスター発表)  めっき技術, 25(4), 52 (2012).

Au電析膜中の水素, 仲 大輔, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム, p.57 (2011)

紹介記事(注目ポスター発表)  めっき技術, 25(4), 53 (2012).

Auナノ粒子を接合点とするSi上への高密着性無電解めっき膜形成, 長谷川 綾, 福室直樹, 八重真治, 阪本 進*, 松田 均, *日本オイコス, 第13回関西表面技術フォーラム, p.57 (2011)

紹介記事(注目ポスター発表)  めっき技術, 25(4), 54 (2012).

貴金属の新規リサイクルプロセス, 大野由希子, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム, p.75 (2011)

関西電気化学奨励賞 受賞

水素ラジカルによるはんだの還元と再酸化抑制効果, 萩原泰三*, 大野恭秀*, 福室直樹, 八重真治, 松田 均, *神港精機, 第3回関西電気化学研究会, p. P24 (2011)

AFM Analysis For Electroless Displacement Deposition of silver on Silicon Surface, 江籠卓馬, 八重 真治, 福室 直樹, 松田 均, 第21回日本MRS学術シンポジウム, p. ABSM14 (2011)

無電解置換析出を利用した貴金属の新規リサイクルプロセス, 大野由希子,八重真治,福室直樹,阪本 進*,松田 均, 表面技術協会第125回講演大会講演要旨集, p.32 (2011)

Auナノ粒子を触媒および接点とするSi上への無電解めっき, 長谷川綾,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第125回講演大会講演要旨集, p.33 (2011)

金属ナノロッドによるシリコン上への高密着性無電解めっき膜の形成 〜ナノロッドの形状と密着性〜, 榎本将人,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第125回講演大会講演要旨集, p.179 (2011)

プラズマ処理をしたSi上へのPt微粒子の無電解置換析出, 萩原泰三,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第125回講演大会講演要旨集, p.182 (2011)

銅めっき膜の室温再結晶に及ぼす諸因子の検討, 福室直樹,八重真治,松田 均,深井 有* , 日本金属学会第150回講演大会講演概要(CD-ROM) S113 (2012)

Catalytic Activity of Noble Metals for Hydrofluoric Acid Etching of Silicon, S. Yae, Y. Morii, N. Fukumuro, H. Matsuda, Extended Abstracts of the 8th International Conference Porous Semiconductors Science and Technology pp.34-35 (2012)

Hydrogen-Induced Enhancement of Atomic Diffusion in Electrodeposited Pd films, N. Fukumuro, M. Yokota, S. Yae1, H. Matsuda, Y. Fukai*, 8th International Conference on Diffusion in Solids and Liquids Book of Abs. (CD-ROM) p.114 (2012)

めっき膜における水素誘起効果, 福室直樹,八重真治,松田 均,深井 有*, 10回水素量子アトミクス研究会,アブストラクト集,p.9 (2012)

シリコン上への銀の無電解置換析出初期に観察される溶解再析出, 江籠卓馬,八重真治,萩原泰三,福室直樹,松田 均, 62回マテリアルズ・テーラリング研究会 (2012)

ジニトロスルファト白金(U)酸浴から電析したPt膜中の水素, 久永尚哉,福室直樹,八重真治,松田 均, 62回マテリアルズ・テーラリング研究会 (2012)

Ni電析中の水素の挙動 〜めっき膜に残留する水素と透過する水素〜, 下津敬二,福室直樹,八重真治,松田 均, 62回マテリアルズ・テーラリング研究会 (2012)

Recycling Process of Noble Metal Using Electroless Displacement Deposition on Silicon, S. Yae, Y. Ohno, N. Fukumuro, H. Matsuda, The 63rd Annual Meeting of the International Society of Electrochemistry Book of Abs. (CD-ROM) (2012)

14回優秀講演賞 受賞 Pt電析膜中の水素と結晶粒成長, 久永尚哉, 福室直樹, 八重真治, 松田均, 深井 有, 表面技術協会第126回講演大会講演要旨集, p.77 (2012)

1回学生優秀講演賞 受賞 ステップテラス構造を持つシリコン上への銀の無電解置換析出のAFM 観察, 江籠卓馬,八重真治,萩原泰三,福室直樹,松田 均, 表面技術協会第126回講演大会講演要旨集, p.78 (2012)

Fe-C 合金電析膜の含有水素の定量と組織解析, 水田泰徳,福室直樹, 八重真治, 松田均, 深井 有*, 表面技術協会第126回講演大会講演要旨集, p.48 (2012)

Siの金属微粒子援用HFエッチングにおけるカソード反応の影響, 森井友麻,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第126回講演大会講演要旨集, p.77 (2012)

Hydrogen in Platinum Films Electrodeposited from Dinitorosulfatoplatinate Solution, N. Hisanaga, N. Fukumuro, S. Yae, H. Matsuda, PRiME 20122012年電気化学日米合同大会) Abs. #186

Metal-Assisted Chemical Etching of Silicon Using Oxygen as an Oxidizing Agent, S. Yae, Y. Morii, M. Enomoto, N. Fukumuro, H. Matsuda, PRiME 20122012年電気化学日米合同大会) Abs. #2371

AFM Analysis for Initial Stage of Electroless Displacement Deposition of Silver on Silicon Surface, T. Ego, S. Yae, T. Hagihara, N. Fukumuro, H. Matsuda, PRiME 20122012年電気化学日米合同大会) Abs. #3306

Hydrogen-Induced Enhancement of Atomic Diffusion in Electrodeposited Pd films, N. Fukumuro, M. Yokota, S. Yae1, H. Matsuda, Y. Fukai*, International Symposium on Metal-Hydrogen Systems, Abs. p.73 (2012)

金属微粒子援用HFエッチングを用いたSi微細孔の形成, 森井友麻,八重真治,福室直樹,阪本 進,松田 均, 29ARS伊豆長岡コンファレンス予稿集, p.92 (2012)

無電解析出を利用した貴金属の新規リサイクルプロセス, 福田健二, 江籠卓馬, 福室直樹, 八重真治, 松田 均, 4回関西電気化学研究会, P20 (2012)

電析Pd膜中の水素とその効果, 横田正哉, 福室直樹, 八重真治, 松田 均, 第14回関西表面技術フォーラム, p.12 (2012)

Ni電析中の水素の挙動に及ぼす基板の水素透過性の影響, 下津敬二, 福室直樹, 八重真治, 松田 均, 第14回関西表面技術フォーラム, p.13 (2012)

Si上の金属ナノロッドの太さが無電解めっき膜の密着性に与える効果, 榎本将人,八重真治,阪本 進,福室直樹,松田 均, 第14回関西表面技術フォーラム, p.44 (2012)

金属援用エッチングによるシリコンの多孔質化−触媒ナノ粒子の2 つの役割−, 八重真治、福室直樹、松田 均, 表面技術協会第127回講演大会講演要旨集 pp.327-330 (2013)

電気化学的透過法によるNi 電析中の水素の挙動解析〜基板の水素透過性の影響〜, 下津敬二、福室直樹、八重真治、松田 均, 表面技術協会第127回講演大会講演要旨集 p.29 (2013)

Pt 電析膜中の水素が膜の構造に及ぼす影響, 久永尚哉、福室直樹、八重真治、松田 均、深井 有*, 表面技術協会第127回講演大会講演要旨集 p.122 (2013)

金ナノ粒子を触媒としてシリコン上に形成した無電解めっき膜の密着性, 厚芝博之、八重真治、福室直樹、阪本進、松田 均, 表面技術協会第127回講演大会講演要旨集 p.124 (2013)

銅微粒子を用いたSi の金属援用HF エッチング, 永尾 圭、八重真治、福室直樹、松田 均, 表面技術協会第127回講演大会講演要旨集 p.194 (2013)

シリコン上への銀の無電解置換析出挙動, 江籠卓馬、八重真治、萩原泰三、福室直樹、松田 均, 表面技術協会第127回講演大会講演要旨集 p.267 (2013)

めっき膜中の水素とその効果(V), 福室直樹、八重真治、松田 均、深井 有*, 日本金属学会第152回講演大会講演概要(CD-ROM) p.S21 (2013)

銅電析膜中の水素と室温再結晶, 吉田裕輝、福室直樹、八重真治、松田 均、深井 有, 日本金属学会第152回講演大会講演概要(CD-ROM) p.54 (2013)

超音波リボンボンダによる異種金属接合の界面構造, 福室直樹、八重真治、松田 均、坂東裕次* (*三菱電機エンジニアリング), 日本金属学会第152回講演大会講演概要(CD-ROM) p.28 (2013)

低コストかつ高効率で全貴金属に適用できる新しい回収法, 福田健二、八重真治、福室直樹、松田 均, 2JACI/GSCシンポジウム(13GCSシンポジウム) p.257 (2013)

ウェットプロセスによる低コスト高効率太陽電池の作製, 榎本将人、八重真治、阪本 進、福室直樹、松田 均, 2JACI/GSCシンポジウム(13GCSシンポジウム) p.172 (2013)

金属ナノ粒子を触媒および接合点として用いたシリコン上への無電解めっき, 榎本将人、八重真治、厚芝博之、折田由紀子、阪本 進、福室直樹、松田 均, 65回マテリアルズ・テーラリング研究会 (2013)

優秀賞 受賞 電析Pd膜中の水素とその効果, 横田正哉、八重真治、福室直樹、松田 均, 65回マテリアルズ・テーラリング研究会 (2013)

Electroless Metallization of Silicon Using Metal Nanoparticles as Catalysts and Binding-Points, M. Enomoto, S. Yae, H. Atsushiba, N. Fukumuro, S. Sakamoto, H. Matsuda, 223rd ECS Meeting, Abs. 2594 (2013)

Noble Metal Recovering by Electroless Displacement Deposition on Silicon Powder, K. Fukuda, S. Yae, N. Fukumuro, H. Matsuda, 223rd ECS Meeting, Abs. 2628 (2013)

めっきにおける水素誘起超多量空孔, 福室直樹、八重真治、松田 均、深井 有*, 日本金属学会第153回講演大会講演概要(CD-ROM) p.S18 (2013)

電析Agめっき膜中の水素の挙動, 草別 孝、福室直樹、八重真治、松田 均、深井 有, 表面技術協会第128回講演大会講演要旨集 p.28 (2013)

シリコン上に形成した金属ナノロッドの形状と無電解めっき膜の密着性, 榎本将人、八重真治、折田由紀子、阪本 進、福室直樹、松田 均, 表面技術協会第128回講演大会講演要旨集 p.76 (2013)

シリコン上への無電解置換析出を用いた貴金属の回収, 福田健二、八重真治、福室直樹、松田 均, 表面技術協会第128回講演大会講演要旨 p.191 (2013)

Auナノ粒子を触媒としたSi上への無電解めっき膜形成 〜基板とめっき膜界面の構造と密着性〜, 厚芝博之、八重真治、折田由紀子、阪本 進、福室直樹、松田 均, 電気化学秋季大会講演要旨集 p.151 (2013)

Fe-C合金電析膜における表面炭素の放射光軟X線吸収分析, 村松康司、西谷 康、植村智之、水田泰徳、福室直樹、松田 均, 74回応用物理学会秋季学術講演会講演予稿集(CDROM) p.19A-A13-6 (2013)

Antireflection and metal-electrode-production using catalytic nanoparticles for efficient silicon solar cells, S. Yae, S. Sakamoto, Y. Orita, K. Yamakawa, H. Atsushiba, M. Enomoto, N. Fukumuro, H. Matsuda, The 23rd Photovoltaic Science and Engineering Conference (PVSEC-23), #1273 (2013)

金属微粒子援用エッチングによる太陽電池の高効率化, 八重真治, 30ARS弘前コンファレンス予稿集 pp.47-52 (2013)

金属ナノ粒子を底にもつ多孔質シリコンを利用した高信頼性無電解めっき, 榎本将人、八重真治、阪本 進、福室直樹、松田 均, 30ARS弘前コンファレンス予稿集 p.116 (2013)

金属微粒子援用HFエッチングを用いて形成したシリコンの極薄多孔質層による反射防止, 山川加能、八重真治、榎本将人、福室直樹、阪本 進、松田 均, 30ARS弘前コンファレンス予稿集 p.122 (2013)

電析Pd膜中の水素の存在状態とその効果, 横田正哉、福室直樹、八重真治、松田 均、深井 有*, 第15回関西表面技術フォーラム p.18 (2013)

Fe-C合金電析膜に含まれる水素の存在状態の解析, 小嶋冴香、福室直樹、八重真治、松田 均、深井 有*, 第15回関西表面技術フォーラム p.68 (2013)

電析Au膜中に含まれる水素の定量と構造解析, 中條貴浩、福室直樹、八重真治、松田 均、深井 有*, 第15回関西表面技術フォーラム p.63 (2013)

平成25年度 関西電気化学奨励賞 受賞 シリコン上に形成した金属ナノロッドの形状制御と無電解めっき膜の密着性, 榎本将人、八重真治、阪本 進、福室直樹、松田 均, 2013年度第3回関西電気化学研究会 p.21 (2013)

Noble Metal Nanoparticles on Silicon for Nano/Micro Structure Formation, S. Yae, International Conference on Small Science (ICSS2013), pp.186-187 (2013)


めっきにおける水素誘起超多量空孔の生成とその効果, 福室直樹、八重真治、松田 均、深井 有*, 第117回金属物性研究会, 講演概要集p. 10-13 p.63 (2014)


Structure Control of Catalytic Nanopores on Silicon for Electroless Formation of Adhesive Metal Film, M. Enomoto, S. Yae, N. Fukumuro, S. Sakamoto, H. Matsuda, Porous Semiconductors - Science and Technology (PSST2014), Abs. 01-P1-13 pp.50-51 (2014)


無電解置換析出を利用した新規貴金属回収, 福田健二,八重真治,福室直樹,松田 均, 表面技術協会第129回講演大会要旨集, p.48 (2014)


シリコン上への無電解置換析出を利用した貴金属回収, 八重真治,福室直樹,松田 均, 表面技術協会第129回講演大会要旨集, pp.305-308 (2014)


電析Pd膜中の水素の存在状態と構造への影響, 横田正哉,福室直樹,八重真治,松田 均,深井 有, 表面技術協会第129回講演大会要旨集, pp.128-129 (2014)


金属ナノ粒子を触媒としてシリコン上に形成した無電解めっき膜のコンタクト抵抗, 折田由紀子, 厚芝博之, 榎本将人, 阪本 進, 高上豪倫, 福室直樹, 八重真治, 松田 均, 表面技術協会第129回講演大会要旨集, p.95 (2014)


Cu電析膜の室温再結晶に及ぼす水素の影響, 吉田裕輝, 福室直樹, 八重真治, 松田 均, 深井 有 , 日本金属学会第154回講演大会講演概要(CD-ROM), S2・2 (2014)


超音波リボンボンダを用いた異種金属接合及び接合界面の観察, 岩倉圭之朗、福室直樹、八重真治、松田 均、坂東裕次* , 日本金属学会第154回講演大会講演概要(CD-ROM), P072 (2014)


超高圧下での無電解ニッケルめっきに関する研究, 信吉裕太、山本拓司、前田光治、福室直樹、八重真治、松田 均、福井啓介 , 第16回化学工学会学生発表会, J117 (2014)


シリコン上への銀の無電解置換析出過程の観察, 木戸 茜、八重真治、福田健二、萩原泰三、福室直樹、松田 均 , 電気化学会第81回大会講演要旨集, p.435 (2014)


Electroless Displacement Deposition of Noble Metal on Silicon Powder for Recovering from Urban Mines, K. Fukuda, S. Yae, N. Fukumuro, S. Sakamoto, H. Matsuda,225th ECS Meeting, Abs. 524 (2014)


Contact Resistance Measurement of Electrode on Silicon Prepared By Autocatalytic Electroless Metallization Using Metal Nanoparticles, Y. Orita, S. Yae, H. Atsushiba, M. Enomoto, T. Kimura**, N. Fukumuro, H. Takagami*, K. Kato*, S. Sakamoto, M. Hirata***,225th ECS Meeting, Abs. 527 (2014)


Metal-assisted Etching of Silicon: Formation and Control of Porous Structures, S. Yae, S. Sakamoto, N. Fukumuro, H. Matsuda, 2nd International Symposium on Anodizing Science and Technology (AST2014), Abs. p.60 (2014)


Structure Control of Porous Silicon Produced by Metal Assisted Etching for Electroless High Reliability Metal Film Formation, M. Enomoto*, S. Yae, N. Fukumuro, S. Sakamoto, H. Matsuda, 2nd International Symposium on Anodizing Science and Technology (AST2014), Abs. p.62 (2014)


Antireflection using porous structure produced by metal-assisted etching for efficient silicon solar cells, K. Yamakawa, S. Yae, M. Enomoto*, N. Fukumuro, S. Sakamoto, H. Matsuda, 2nd International Symposium on Anodizing Science and Technology (AST2014), Abs. p.121 (2014)


ポーラスSi形成の基礎, 八重真治 , 金属のアノード酸化皮膜の機能化部会(ARS)第87回例会講演予稿集, pp.43-49 (2014)


Electroless Nickel Plating under High Pressure, Y. Nobuyoshi, T. Yamamoto, K. Maeda, N. Fukumuro, S. Yae, H. Matsuda, K. Fukui, Asian Crystallization Technology Symposium-2014, PA-05 (2014)


Hydrogen-Induced Superabundant Vacancies in Electrodeposited Fe-C Alloy Films, N. Fukumuro, S. Kojima, M. Fujino, Y. Mizuta, T. Maruo, S. Yae, Y. Fukai*, 14th International Symposium on Metal-Hydrogen Systems (MH2014), Abs. p.330 (2014)


半導体廃棄物を利用した都市鉱山からの貴金属回収, 八重真治 , イノベーション・ジャパン2014, 大学見本市出展者一覧 p.54 (2014)


シリコン切削屑を利用した無電解置換析出による貴金属の回収, 福田健二、福室直樹、坂本 進、八重真治 , 資源・素材2014(熊本)大会プログラム・要旨集, p.113 (2014)


電析Cu膜の室温再結晶に及ぼす水素の影響, 吉田裕輝、福室直樹、八重真治、深井 有* , 表面技術協会第130回講演大会講演要旨集, p.37 (2014)


電析Ag膜中の水素の挙動と構造解析, 草別 孝、福室直樹、八重真治、深井 有* , 表面技術協会第130回講演大会講演要旨集, p.69 (2014)


電析Co/Pt二層膜の膜中水素が拡散に及ぼす影響, 岡本 真、福室直樹、八重真治、深井 有* , 日本金属学会155回講演大会講演概要(CD-ROM), 227 (2014)


貴金属回収を目指したシリコン上への無電解置換析出, 福田健二、福室直樹、八重真治 , 2014年電気化学秋季大会講演要旨集, p.76 (2014)


金の電解析出時に共析する水素, 中條貴浩、福室直樹、八重真治、深井 有* , 2014年電気化学秋季大会講演要旨集, p.76 (2014)


Fe-C合金電析膜中の水素誘起超多量空孔, 福室直樹、八重真治、深井 有* , 第12回水素量子アトミクス研究会講演要旨集, p.16 (2014)


The Effect of High Pressure on the Electroless Nickel Plating, Y. Nobuyoshi, T. Yamamoto, K. Maeda, N. Fukumuro, S. Yae, K. Fukui, 10th International Conference on Separation Science and Technology, CP-13 (2014)


金属援用エッチングによるシリコン太陽電池の反射防止 −多孔質構造と光学薄膜としての特性―, 山川加能、阪本 進、福室直樹、八重真治 , 第31回ARS足柄コンファレンス予稿集, p.84 (2014)


金ナノ粒子を触媒として形成した無電解めっき膜とシリコンの界面構造, 厚芝博之、折田由紀子、阪本 進、福室直樹、八重真治 , 第16回関西表面技術フォーラム, p.8 (2014)


Fe-C合金電析膜の共析水素の挙動と構造変化, 藤野萌子、小嶋冴香、福室直樹、八重真治、深井 有* , 第16回関西表面技術フォーラム, p.41 (2014)


電析Pd膜中の水素の存在状態に及ぼす浴温の影響と膜の構造変化, 山田麻由、横田正哉、福室直樹、八重真治、深井 有* , 第16回関西表面技術フォーラム, p.42 (2014)


超高圧下での無電解ニッケルめっきに関する検討, 信吉裕太、山本拓司、前田光治、福室直樹、八重真治、福井啓介 , 化学工学会姫路大会2014, A236 (2014)


無電解めっきによるシリコン上への金のヘテロエピタキシャル成長 〜めっき膜の密着性に及ぼす効果〜, 山田直輝,厚芝博之,阪本 進,福室直樹,八重真治 , 表面技術協会第131回講演大会講演要旨集, p.69 (2015)


金属援用エッチングを用いて形成した多孔質シリコン薄膜の光学特性, 山川 加能, 阪本 進, 福室 直樹, 八重 真治 , 電気化学会第82回大会大会講演要旨集, 1Q18 (2015)


置換析出させた金ナノ粒子を触媒とした無電解Ni-Pめっき膜とSi基板の界面構造, 厚芝博之,山田直輝,折田由紀子,阪本 進,福室直樹,八重真治 , 電気化学会第82回大会大会講演要旨集, 2Q06 (2015)


電析Pt 膜への水素の共析, 唐津晋也,萩原泰三,田口裕貴,福室直樹,八重真治 , 電気化学会第82回大会講演要旨集, PS67 (2015)


Fe-C合金電析膜中の水素誘起超多量空孔, 福室直樹、八重真治、深井 有* , 日本金属学会156回講演大会講演概要(CD-ROM), S5・6 (2015)


めっき膜中に共析した水素の挙動解析 〜水素誘起超多量空孔と構造変化〜 , 福室直樹 , 表面技術協会関西支部 平成27年度第1回表面物性研究会講演テキスト, pp.1-28 (2015)


めっきによる金属膜への水素の共析とその挙動 , 八重真治、福室直樹 , 第71回マテリアルズ・テーラリング研究会, (2015)


銅−ニッケル界面相互拡散に及ぼすニッケル膜中の水素の影響 , 勝田裕貴、福室直樹、八重真治 , 第71回マテリアルズ・テーラリング研究会, (2015)


高圧力下での電解めっきにおける水素共析の評価を目指して , 山崎貴昭、福室直樹、山本拓司、前田光治、八重真治 , 第71回マテリアルズ・テーラリング研究会, (2015)


無電解置換析出によるシリコン上への金のエピタキシャル成長 , 山田直輝、福室直樹、八重真治 , 第71回マテリアルズ・テーラリング研究会, (2015)


Siの金属援用エッチングにおけるRuの触媒活性, 定金大介, 山川加能, 福室直樹, 八重真治 , 表面技術協会第132回講演大会講演要旨集(CD-ROM), 10C-02 (2015)


SiC上への無電解めっき膜の形成, 山田直輝, 定金大介, 福田健二, 阪本 進, 福室直樹, 八重真治 , 表面技術協会第132回講演大会講演要旨集(CD-ROM), 10D-18 (2015)


電析Ag膜中の水素の挙動に及ぼす浴組成と添加剤の影響, 岩倉圭之朗, 草別 孝, 福室直樹, 八重真治, 深井 有* , 表面技術協会第132回講演大会講演要旨集(CD-ROM), 10E-28 (2015)


金ナノ粒子を触媒として無電解めっき膜を形成した単結晶シリコンの界面構造, 山田直輝,阪本 進,福室直樹, 八重真治 , 2015年電気化学秋季大会講演要旨集, 2A12 (2015)


シリコンウェーハ上への直接無電解めっき, 八重真治, 山田直輝, 阪本 進, 福室直樹 , エレクトロニクス実装学会 第25回マイクロエレクトロニクスシンポジウム, 2A12 (2015)


Catalytic Activity of Ru for Metal-Assisted Etching of Si, D. Sadakane, K. Yamakawa, N. Fukumuro, and S. Yae, 228th ECS Meeting, Abs. 58936 (2015)


Metal-Assisted Etching of Silicon: Activity of Metal Catalysts and Control of Porous Structure, S. Yae, N. Fukumuro, and S. Sakamoto, 228th ECS Meeting, Abs. 59814 (2015)


Optical Property of Porous Silicon Produced By Metal-Assisted Etching, K. Yamakawa, S. Sakamoto, N. Fukumuro, and S. Yae, 228th ECS Meeting, Abs. 60015 (2015)


白金電析の電気化学水晶振動子マイクロバランス(EQCM)による解析, 八重真治、福室直樹 , 電気鍍金研究会10月研究例会, めっき技術Vol.28, No.6, pp.13-19 (2015)


金属援用エッチングを用いて形成したシリコンホールアレイの光学特性, 山川加能, 阪本 進, 福室直樹1, 八重真治 , 第32回金属のアノード酸化皮膜の機能化部会(ARS)姫路コンファレンス講演予稿集, p.74 (2015)


Ruを用いたSiの金属援用エッチング, 定金大介, 山川加能, 福室直樹, 八重真治 , 第32回金属のアノード酸化皮膜の機能化部会(ARS)姫路コンファレンス講演予稿集, p.75 (2015)


ポスター賞受賞

無電解置換析出におけるSiの局部アノード溶解, 木戸 茜, 岸野りさ, 福室直樹, 八重真治 , 第32回金属のアノード酸化皮膜の機能化部会(ARS)姫路コンファレンス講演予稿集, p.76 (2015)


めっき膜中に共析した水素の挙動と構造への影響, 八重真治、福室直樹 , 表面技術協会 めっき部会11月例会, pp.13-24 (2015)


鉄-炭素合金電析膜の水素共析に及ぼす浴組成の影響, 川崎真央,藤野萌子,福室直樹,八重真治,深井 有* , 第17回関西表面技術フォーラム, p.12 (2015)


パラジウム電析膜中の水素の存在状態と膜の構造変化, 香西祐佳,山田麻由,福室直樹,八重真治,深井 有* , 第17回関西表面技術フォーラム, p.13 (2015)


塩基性溶液を用いたシリコン上への無電解置換析出による貴金属回収, 小神優里奈,福田健二,八重真治,福室直樹 , 第17回関西表面技術フォーラム, p.14 (2015)


電析ニッケル/銅界面の相互拡散に及ぼす水素の影響, 勝田裕貴,福室直樹,八重真治,深井 有* , 第17回関西表面技術フォーラム, p.65 (2015)


コバルト/白金二層膜に共析する水素の存在状態と構造変化, 岡本 真,福室直樹,八重真治,深井 有* , 第17回関西表面技術フォーラム, p.66 (2015)


コバルト/白金二層膜に共析する水素の存在状態と構造変化, 岡本 真,福室直樹,八重真治,深井 有* , 第17回関西表面技術フォーラム, p.66 (2015)


めっきにおける水素誘起超多量空孔の生成とその効果, 福室直樹, 八重真治,深井 有* , 日本金属学会中国四国支部研究会 第123回金属物性研究会講演概要集, p.6 (2015)


白金電析に及ぼす吸着水素の影響, 横山綾乃、萩原泰三、唐津晋也、福室直樹、八重真治 , Cat-on-Cat Symposium in Himeji 2015 「分子認識と触媒が先導する物質変換とセンシング」, p.23 (2015)


シリコン上への金ナノ粒子触媒のエピタキシャル成長, 山田直輝, 阪本 進, 福室直樹, 八重真治 , Cat-on-Cat Symposium in Himeji 2015 「分子認識と触媒が先導する物質変換とセンシング」, p.24 (2015)


高静水圧下で電解析出する金属への水素共析, 山崎貴昭,福室直樹,山本拓司,前田光治,八重真治 , 2015年度第3回関西電気化学研究会, p. (2015)


銀電析における水素共析と微細構造に及ぼす添加剤の影響, 福室直樹, 岩倉圭之朗, 草別 孝, 深井 有, 八重真治 , 表面技術協会第133回講演大会, p.132 (2016)


シリコン粉末上への無電解置換析出を利用した貴金属回収, 八重 真治, 小神 優里奈, 福田 健 , 表面技術協会第133回講演大会, p.132 (2016)


多孔質シリコン層を利用した光反射防止による太陽電池の高効率化, 八重真治,山川加能,阪本 進 , 表面技術協会第133回講演大会, pp.182-183 (2016)


Pd電析膜からの水素脱離に伴う構造変化, 福室直樹, 香西祐佳, 山田麻由, 深井 有, 八重真治 , 日本金属学会第158回講演大会, S4.8 (2016)


シリコンおよびシリコンカーバイトへの無電解めっき, 八重真治、福室直樹 , 日本金属学会第158回講演大会, S4.10 (2016)


白金電析のEQCM解析-水素吸着の影響, 八重真治, 萩原泰三, 横山綾乃, 岡本 真, 福室直樹 , 電気化学会第83回大会, 1A28 (2016)


シリコンの金属援用エッチングにおけるルテニウムとパラジウムの特異な触媒活性, 定金大介, 八重真治 , 第5回JACI/GSCシンポジウム, B-111 (2016)


高圧力下で電析したニッケルの構造と水素, 山崎貴昭, 福室直樹, 山本拓司, 前田光治, 八重真治 , 第5回JACI/GSCシンポジウム, B-112 (2016)


シリコン上の金ナノ粒子の無電解エピ成長と電極形成, 山田直輝, 阪本 進, 福室直樹, 八重真治 , 第5回JACI/GSCシンポジウム, B-112 (2016)


シリコン上への貴金属ナノ粒子の無電解析出とその金属薄膜形成への応用, 八重真治 , 第 79 回 新無機膜研究会, (2016)


単結晶SiおよびSiCウェーハ上への直接無電解めっき, 八重真治 , エレクトロニクス実装学会 関西ワークショップ2016, (2016)


塩化物錯体溶液からの白金電析に及ぼす吸着水素の影響, 横山綾乃, 角川舞, 福室直樹, 八重真治 , 表面技術協会第134回講演大会, p.13 (2016)


電析時の静水圧が膜物性に及ぼす影響, 山崎貴昭, 福室直樹, 山本拓司, 前田光治, 八重真治 , 表面技術協会第134回講演大会, p.14 (2016)


SiC上への無電解めっき膜の形成, 山田直輝、福田健二、阪本 進、福室直樹、八重真治 , 第26回 マイクロエレクトロニクスシンポジウム, pp.83-86 (2016)


Hydrogen behavior in Electrodeposited Cu, Ag and Au Films, N. Fukumuro, Y. Fukai, S. Yae , The 19th Interfinish World Congress & Exhibition (Interfinish 2016), p.201 (2016)


Electroless Nucleation of Gold Nanoparticles and Growth of Metal Films on Silicon and Silicon Carbide Wafers , S. Yae, N. Yamada, K. Fukuda, D. Sadakane, S. Sakamoto, N. Fukumuro , NGRC(Nucleation & Growth Research Conference), OP-8(2016)


ポスター賞受賞

High Static Pressure Electrodeposition of Nickel , T. Yamazaki, K. Abe, N. Fukumuro, T. Yamamoto, K. Maeda, S. Yae , NGRC(Nucleation & Growth Research Conference), PP-2 (2016)


Metal-Assisted Etching of Silicon Using Ruthenium Nanoparticles , D. Sadakane, S. Yae , NGRC(Nucleation & Growth Research Conference), PP-3 (2016)


Surface Metallization of Silicon Carbide By Electroless Deposition , N. Yamada, D. Sadakane, K. Fukuda, S. Sakamoto, N. Fukumuro, and S. Yae , PRiME 2016/230th ECS Meeting, #1547 (2016)


Effect of Epitaxially Deposited Gold Nanoparticles on Electroless Metallization of Silicon Wafers , N. Yamada, S. Sakamoto, N. Fukumuro, and S. Yae , PRiME 2016/230th ECS Meeting, #3927 (2016)


Influence of Hydrogen Adsorption on Electrodeposition of Platinum from Chloro Complex Solution , A. Yokoyama, T. Hagihara, N. Fukumuro, and S. Yae , PRiME 2016/230th ECS Meeting, #3992 (2016)


鉄めっき膜中の水素と力学特性 , 廣P元貴, 福室直樹, 八重真治 , 第18回関西表面技術フォーラム, p.12 (2016)


高静水圧下で電析したニッケル膜の構造と水素 , 阿部晃平, 山崎貴昭, 福室直樹, 山本拓司, 前田光治, 八重真治 , 第18回関西表面技術フォーラム, p.13 (2016)

めっき膜における水素共析と水素誘起現象 , 福室直樹 , 軽金属学会 水素と力学特性研究部会, (2016)

Thin Porous Silicon Produced ByMetal-Assisted Etching, S. Yae , PRiME 2016/230th ECS Meeting, #1255 (2016)

Metal-Assisted Etching (Electroless Anodizing) of Silicon , S. Yae , KJJS2016 (The 3rd Korea-Japan Joint Symposium for ARS & ESS) , (2016)

Porous Silicon Produced By Metal-Assisted Etching , S. Yae , The Energy Materials and Nanotechnology (EMN) Meeting on Nanopores, (2016)


ニッケル電析時の高静水圧が水素共析に及ぼす影響, 福室直樹,山崎貴昭, 阿部晃平, 山本拓司, 前田光治, 八重真治 , 表面技術協会第135回講演大会, 09D-30 (2017)


シリコンの金属援用エッチングのpH依存性, 定金大介,福室直樹,八重真治 , 表面技術協会第135回講演大会, 10B-02 (2017)


白金めっきに及ぼす吸着水素の影響と水素共析挙動, 八重真治,横山綾乃,角川 舞,福室直樹 , 日本金属学会第160回講演大会, S3.8 (2017)


電析Cu膜の室温粒成長に及ぼす水素の影響, 福室直樹,吉田裕輝,山崎貴昭,深井 有,八重真治 , 日本金属学会第160回講演大会, S3.9 (2017)


金ナノ粒子を触媒としてシリコン上に形成した無電解めっき膜と基板の界面構造, 山田直輝,福室直樹,八重真治 , 電気化学会第84回大会, 3S11 (2017)


白金めっき時の水素の吸着と吸蔵, 横山綾乃,木下剛志,福室直樹,八重真治 , 第77回マテリアルズ・テーラリング研究会, (2017)


めっきによりシリコン上に整合成長した金ナノ粒子の機能性, 高坂祐一,山田直輝,藤居 稜,福室直樹,八重真治 , 第77回マテリアルズ・テーラリング研究会, (2017)


Influence of Adsorption of Hydrogen on Its Incorporation during Electrodeposition of Platinum, S. Yae, A. Yokoyama, N. Fukumuro , 68th Annual Meeting of the International Society of Electrochemistry, (2017)


金ナノ粒子を触媒としてシリコン上に直接形成した無電解ニッケルめっきの界面微細構造, 高坂祐一,山田 直輝,阪本 進,福室直樹,八重真治 , 日本金属学会第161回講演大会, 75 (2017)


シリコン粉末を用いたセメンテーション法による都市鉱山からの貴金属の選択的回収, 津田多公也,福田健二,八重真治 , 日本金属学会第161回講演大会, 272 (2017)


金ナノ粒子を触媒とするシリコン上への直接無電解めっきを用いた電極形成, 高坂祐一, 山田直輝, 藤居 稜, 東孝太郎, 阪本 進, 福室直樹, 八重真治 , 表面技術協会第136回講演大会, 15B-09 (2017)


無電解Ni/Pd/Auの厚膜パラジウム条件下でのはんだ接合合金層の解析, 小田幸典, 福室直樹,八重真治 , 表面技術協会第136回講演大会, 15B-22 (2017)


シリコン粉末上への無電解置換析出による金回収における溶液pHの影響, 津田多公也,福田健二,有田翔太郎,八重真治 , 表面技術協会第136回講演大会, 15B-23  (2017)