主な学術論文・解説・著書・特許・最近の学会発表
主な学術論文
(1) Characteristics of
Electrolessly Deposited CoReNiMnP Films with Perpendicular Magnetic Anisotropy,
H. Matsuda, O. Takano, and P. J. Grundy, Journal of Magnetism and Magnetic
Materials, Vol. 128, 386 (1993).
(2) Effect of Dissolved Oxygen on the Magnetic Properties of Electrolessly
Deposited Co-P Films, H. Matsuda, and O. Takano, Journal of Magnetism and
Magnetic Materials, Vol. 131, 440 (1994).
(3) Characteristics of Electrolessly Deposited Cobalt Tin Phosphorus Films, H.
Matsuda and O. Takano, Journal of Magnetism and Magnetic Materials, Vol.
134, 185 (1994).
(4) Magnetization Mechanism of Electrolessly Deposited NiXP/CoReNiMnP Double
Layer Films, H. Matsuda, D. Kim, and O. Takano, Transactions of the
Institute of Metal Finishing UK, Vol. 72, 150 (1994).
(5) Magnetic Recording Properties of Electrolessly Deposited NiXP/CoReNiMnP
Double Layer Media, H. Matsuda, I. Takasu, D. Kim, O. Takano, and P. J. Grundy,
Journal of Magnetism and Magnetic Materials, Vol. 155, 250
(1996).
(6) Improvement of the Sintering Processes in a Sendust Alloy Powder Used as a
Magnetic Recording Head Material, I. Takasu, A. Yanagitani, and H. Matsuda, Journal
of Magnetism and Magnetic Materials, Vol. 163, 397 (1996).
(7) Hole Diffusion Length and Temperature Dependence of Photovoltages for n-Si
Electrodes Modified with LB Layers of Ultrafine Platinum Particles, J. G. Jia,
M. Fujitani, S. Yae, and Y. Nakato, Electrochim. Acta, Vol. 42,
431 (1996).
(8) Improvement in Photovoltage and Stability of Porous n-Si Electrodes Coated
with Platinum by Regulation of the Thickness of Nanoporous Layers, K. Kawakami,
T. Fujii, S. Yae, and Y. Nakato, J. Phys. Chem. B, Vol. 101, 4508
(1997).
(9) 無電解めっき法による半導体複合めっき膜の作製とその光電気化学特性, 岩岸哲也, 八重真治, 松田 均, 表面技術, Vol. 49, 1235 (1998).
(10) Development of Electrolessly Deposited Nano Fe-P Films, H. Matsuda, S. Yae,
T. Iwagishi, and H. Matsuo, Trans IMF, Vol. 76, 241 (1998).
(11) 無電解めっきの活性化前処理におけるSnおよびPdの吸着量とCo−Pめっき皮膜の表面形態, 山岸憲史, 曽我倫明, 西羅正芳, 八重真治, 松田 均, 表面技術, Vol. 50,
378 (1999).
(12) ヒドラジンを還元剤とする無電解Niめっき膜の光沢性の向上, 八重真治, 伊藤 潔, 山憲史, 松田 均, 表面技術, Vol. 51,
99 (2000).
(13) 無電解めっきの活性化前処理により絶縁性基板上に形成された触媒核の直接観察, 山岸憲史, 八重真治, 西羅正芳, 松田 均, 表面技術, Vol. 51, 215 (2000).
(14) ヒドラジンを還元剤とする無電解Niめっき膜の光沢性と結晶配向性, 八重真治, 中野久継, 伊藤 潔, 山岸憲史, 松田 均, 表面技術,Vol. 51, 1035 (2000).
(15) Electrochemical Deposition of Fine Pt Particles on n-Si Electrodes for
Efficient Photoelectrochemical Solar Cells, Shinji YAE, Masaki KITAGAKI, Taizou
HAGIHARA, Yuichi MIYOSHI, Hitoshi MATSUDA, Bruce A. PARKINSON, and Yoshihiro
NAKATO, Electrochim. Acta, Vol. 47, 345 (2001).
(16) 無電解めっきの活性化前処理により基板に形成される吸着物の量および形態−センシタイジング液のエージングの影響−, 八重真治, 内野智朗, 関根雄介, 岡本尚樹, 山岸憲史, 松田 均, 表面技術, Vol. 52, 713 (2001).
(17) Formation of porous silicon by metal particle enhanced chemical etching in
HF solution and its application for efficient solar cells, S. Yae, Y. Kawamoto,
H. Tanaka, N. Fukumuro, and H. Matsuda, Electrochem. Comm., Vol. 5,
632 (2003).
(18) Electrolessly Deposited Co-W-Zn-P Films Having High Coercivity and High
Corrosion Resistance, S. Yae, T. Kanki, N. Fukumuro, Y. Yamada, and H. Matsuda,
Trans. IMF, Vol. 81, 45 (2003).
(19) 無電解めっきの二液法活性化前処理により非導電性基板上に形成される吸着物, 山岸憲史, 八重真治,岡本尚樹, 福室直樹, 松田 均, 表面技術, Vol. 54,
150 (2003).
(20) TiO2光触媒を利用したマグネシウム合金上への無電解めっきの光パターニング, 福室直樹,加藤陽平,八重真治,松田 均, 表面技術, 54(12), 1056-1057 (2003).
(21) ヒドラジンを還元剤とする無電解純ニッケルめっきの浴組成の単純化, 八重真治,濱田隆弘,横山敦之,伊藤 潔,福室直樹,松田 均, 表面技術,55(1),89-90
(2004).
(22) 無電解めっきの活性化前処理に用いられるセンシタイジング液の経時変化, 岡本尚樹, 八重真治, 山岸憲史, 三俣宣明, 渡辺 徹, 福室直樹, 松田 均, 表面技術, 55(4), 281-285 (2004).
(23) 無電解Ni-P/TiO2複合めっき膜の構造と光電流密度,
福室直樹, 臼井勇樹, 八重真治, 松田 均, 表面技術, 55(5),
355-359 (2004).
(24) 二液法活性化により非導電性基板上に形成される吸着物と無電解Ni-Pめっき初期析出物の微視的形態, 山岸憲史, 岡本尚樹, 鵜川博之, 福室直樹, 八重真治, 松田 均, 表面技術, 55(6), 417-422 (2004).
(25) Reaction Process of Two-Step Catalysation Pre-treatment for Electroless
Plating on Non-conductiong Substrates, K. Yamagishi, N. Okamoto, N. Mitsumata,
N. Fukumuro, S. Yae, and H. Matsuda, Trans. Inst. Met. Fin., 82(3/4),
114-117 (2004).
(26) Autocatalytic Deposition of Pure Nickel Films Having Bright Surfaces and
High Electrical Conductivity, K. Ito, S. Yae, T. Hamada, H. Nakano, N.
Fukumuro, and H. Matsuda, Electrochemistry, 73(2), 123-127
(2005).
(27) Electroless Deposition of Pure Nickel Films from a Simple Solution
Consisting of Nickel Acetate and Hydrazine, S. Yae, K. Ito, T. Hamada, N.
Fukumuro, and H. Matsuda, Plat. Surf. Finish., 92(4), 58-62
(2005)
(28) ヒドラジンを還元剤とする無電解純ニッケルめっき膜の微細構造と電気伝導性, 伊藤 潔,福室直樹,八重真治, 松田 均, エレクトロニクス実装学会誌, 8(3), 233-236 (2005).
(29) Porous silicon formation by HF chemical etching for antireflection of
solar cells, Shinji Yae, Hiroyuki Tanaka, Tsutomu Kobayashi, Naoki Fukumuro,
and Hitoshi Matsuda, Phys. Stat. Sol. (c), 2(9), 3476-3480
(2005).
(30) Microstructural feature of crystalline-amorphous transition layer in
structurally graded Co-P films produced by an electroless plating process, N. Fukumuro,
J. Nishiyama, S. Yae, and H. Matsuda, Trans. Inst. Met. Finish., 83(6), 281-285
(2005).
(31) Photocatalytic Initiation and Patterning of Autocatalytic Deposition of
Metal Films on Magnesium Alloy Substrates, S. Yae, Y. Kato, N. Fukumuro, K. Tanaka,
and H. Matsuda, Photocatalytic and Advanced Oxidation Processes for Treatment
of Air, Water, Soil and Surfaces (Proceedings of TiO2-9 and AOTs-10) Edited by
D. F. Ollis, H. Al-Ekabi, Redox Technologies, Inc., 155-160 (2005).
(32) ヒドラジンを還元剤とする無電解純ニッケルめっき膜の微細構造と電気伝導性, 伊藤 潔, 福室直樹, 八重真治, 松田
均, エレクトロニクス実装学会誌, 8(3), 233-236
(2005).
(33) Sn-Ag-Cu鉛フリーはんだとの接合性に優れた無電解純Niめっき, 伊藤 潔, 福室直樹, 八重真治, 松田 均, エレクトロニクス実装学会誌, 9(1), 52-56 (2006).
(34) Antireflective Porous Layer Formation on Multicrystalline Silicon by Metal
Particle Enhanced HF Etching, Shinji Yae, Tsutomu Kobayashi, Tatsunori
Kawagishi, Naoki Fukumuro, and Hitoshi Matsuda, Solar Energy, 80(6),
701-706 (2006).
(35) Structural Change in Porous Si by Photoillumination During Metal Particle
Enhanced Etching, S. Yae, T. Kobayashi, T. Kawagishi, N. Fukumuro, and H.
Matsuda, Proc. the Intern. Symp. Pits & Pores III: Formation, Properties,
and Significance for Advanced Materials, 206 ECS Meeting, Oct. 3-8, Honolulu HI
USA, Edited by P. Schmuki, D. J. Lockwood, Y. H. Ogata, M. Seo, and H. S.
Isaacs, ECS Proceedings Vol., 2004-19, 141-146 (2006).
(36) Confirmation of hydroxide in electroless cobalt alloy films by GDOES, N.
Fukumuro, J. Nishiyama, K. Shigeta, H. Takagami, S. Yae, and H. Matsuda, Transactions
of the Institute of Metal Finishing, 85(2), 111-112 (2007).
(37) Solar to chemical conversion using metal nanoparticle modified
microcrystalline silicon thin film photoelectrode, Shinji Yae, Tsutomu
Kobayashi, Makoto Abe, Noriaki Nasu, Naoki Fukumuro, Shunsuke Ogawa, Norimitsu
Yoshida, Shuichi Nonomura, Yoshihiro Nakato, and Hitoshi Matsuda, Solar
Energy Materials & Solar Cells, 91(4), 224-229 (2007).
(38) Co-P multilayer film electrodeposited under DC electrolysis, N. Fukumuro,
J. Nishiyama, K. Shigeta, Y. Morimoto, H. Takagami, S. Yae, H. Matsuda, Electrochemistry
Communications, 9(5), 1185-1188 (2007).
(39) In Situ Measurement of Internal Stress in Electrolessly Deposited Copper
Film by Television Holographic Interferometry, Naoki Fukumuro, Motohiro
Yamazaki, Kiyoshi Ito, Hajime Ishihara, Satoshi Kakunai, Shinji Yae, and
Hitoshi Matsuda, Electrochemical and Solid‑State Letters, 10(6),
E14-E15 (2007).
(40) Structure of Porous Si Formed by Metal-Particle (Pt, Pd) Enhanced HF
Etching, Shinji Yae, Makoto Abe, Tatsunori Kawagishi, Kentarou Suzuki, Naoki
Fukumuro, and Hitoshi Matsuda, Trans. Mater. Res. Soc. Jpn., 32(2),
445-448 (2007).
(41) Nucleation behavior in electroless displacement deposition of metals on
silicon from hydrofluoric acid solutions, Shinji Yae, Noriaki Nasu, Kohei
Matsumoto, Taizo Hagihara, Naoki Fukumuro, and Hitoshi Matsuda, Electrochimica
Acta, 53(1), 35-41 (2007).
(42) Hydrogen production using metal nanoparticle modified silicon thin film
photoelectrode, S. Yae, A. Onaka, M. Abe, N. Fukumuro, S. Ogawa, N. Yoshida, S.
Nonomura, Y. Nakato, H. Matsuda, Solar Hydrogen and Nanotechnology II, Aug.
27-30, 2007, San Diego, CA USA, Edited by Jinghua Guo, Proc. of SPIE, 6650,
#6650-12 (2007).
(43) Palladium Enhanced Etching of n-type Silicon in Hydrofluoric Acid
Solution, Shinji Yae, Makoto Abe, Naoki Fukumuro, Hitoshi Matsuda, Electrochemistry,
72(2), 144-146 (2008).
(44) High Catalytic Activity of
Palladium for Metal-Enhanced Hydrofluoric Acid Etching of Silicon, S. Yae, M.
Tashiro, T. Hirano, M. Abe, N. Fukumuro, and H. Matsuda, ECS Transactions, 16(3), 285-289 (2008).
(45) Metal nanorod production in
silicon matrix by electroless process, Shinji Yae, Tatsuya Hirano, Takashi
Matsuda, Naoki Fukumuro, Hitoshi Matsuda, Appl. Surf. Sci., 255(8), 4670-4672 (2009).
(46)
平滑アルミナ基板と無電解純Niめっき膜の密着性と内部応力との関係, 伊藤 潔, 福室直樹,八重真治, 松田 均, エレクトロニクス実装学会誌, 12(2), 130-136 (2009).
(47)
n型シリコン上への貴金属微粒子電析に及ぼす置換反応の影響, 河井めぐみ, 八重真治, 福室直樹, 松田 均, 表面技術, 60(5),
355-356 (2009).
(48)
High Catalytic Activity of Palladium for Metal-Enhanced HF Etching of Silicon,
Shinji Yae, Masayuki Tashiro, Makoto Abe, Naoki Fukumuro, and Hitoshi Matsuda, J. Electrochem. Soc., 157(2), D90-D93 (2010).
Metal-enhanced
HF etching of Si is an electroless method used to produce porous Si. Such
etching generally uses not only metal-modified Si but also an oxidizing agent,
such as hydrogen peroxide or metal ions. Pd exhibits high activity in enhancing
the HF etching of Si without an oxidizing agent even under
dissolved-oxygen-free and dark conditions. Electrolessly deposited Pd particles
on n-type Si enhance the HF etching of Si but produce no porous layer.
Patterned Pd films localize the etching under the boundary of the Pd deposited
areas, and thus Pd can produce a microetch pattern on Si with a simple immersion
in the HF solution. This etching reaction is explained by electron injection
into the conduction band of Si due to the Pd-enhanced anodic oxidization of Si
with water and the cathodic hydrogen evolution on Pd with the injected
electrons.
(49)
Adhesive Metal Film Formation on Silicon by Electroless Deposition Using
Catalytic Anchors, Shinji Yae, Tatsuya Hirano, Keisuke Sakabe, Naoki Fukumuro,
and Hitoshi Matsuda, ECS Trans., 25(27), 215-220 (2010).
Autocatalytic
electroless deposition, which is a conventional method to metalize nonmetallic
substrates, requires catalyzation of substrates before deposition. For silicon
(Si) substrates, obtaining adhesive metal films with conventional catalyzation
pretreatments is difficult. In this study, we develop a new method to produce
adhesive metal films on Si substrates by an electroless process that consists
of three steps: 1) electroless displacement deposition of metal nanoparticles;
2) Si nanopore formation by metal-particleenhanced hydrofluoric acid etching;
and 3) metal filling in nanopores and metal-film formation on the whole Si
surface by autocatalytic electroless deposition. The metal nanorods in Si act
as catalytic nanoanchors to promote autocatalytic electroless metal deposition
and improve the adhesion of metal films on Si substrates.
(50)
Electrochemical Deposition of Pt Particles from Hexachloroplatinate(IV) Ion and
Tetrachloroplatinate(II) Ion Solutions, M. Kawai, N. Fukumuro, S. Yae, and H.
Matsuda, ECS Trans., 25(33), 117-123 (2010).
The
behavior of Pt electrodeposition on n-Si is different between H2PtCl6
(Pt(IV)) and K2PtCl4 (Pt(II)) aqueous solutions.
Immersion of bare n-Si wafers in a Pt(II) solution under an opencircuit
condition deposits Pt particles on n-Si, but immersion in the Pt(IV) solution
deposits no particles. In the Pt(IV) solution, silicon oxide is produced with
holes injected into the Si valence band by the reduction reaction of Pt(IV) to
Pt(II). The quantity of electrodeposited Pt on the glassy carbon at +0.10 V vs.
SCE in the Pt(IV) solution was smaller than that of the Pt(II) case. Cyclic
voltammetry shows that the electeroeposition behavior of Pt in the early stage
is influenced by the substrates.
(51)
In Situ Stress Measurement of Electrodeposited Ni Films by Television
Holographic Interferometry, N. Fukumuro, T. Do, S. Kakunai, S. Yae, and H.
Matsuda, ECS Trans., 25(34), 27-34 (2010)
In situ stress measurements of
electrodeposited Ni films from a sulfate bath during deposition were carried
out by television holographic interferometry. The effect of the addition of
saccharin sodium on the internal stress in the Ni films was studied. Structure
change with film growth was investigated by cross-sectional TEM observation.
Quantitative analysis of impurities and hydrogen in films was performed. The
stress behaviors of Ni films changed drastically from a tensile direction to a
compressive direction with an increase of the concentration of saccharin
sodium.
(52)
Effect of Absorbed Hydrogen on Microstructure of Electrodeposited Cobalt, A.
Nakayama, N. Fukumuro, S. Yae, and H. Matsuda, ECS Trans., 25(34),
79-85 (2010)
The
objective of this study is to elucidate the relationship between the total
amount of hydrogen absorbed in electrodeposited cobalt films and their
microstructure. The electrodeposited cobalt films were produced by such
different depositing conditions as a solution pH, bath temperature, and current
density. Structure analysis with XRD and TEM and hydrogen analysis with TDS
reveal that the cobalt films with higher absorbed hydrogen content have a
structure with coarse grain that consisted of hcp(100) preferred orientation.
On the other hand, the cobalt films with lower absorbed hydrogen content have a
stacking fault structure of hcp(110)/fcc(220). The total amount of absorbed
hydrogen has a liner relationship with the stacking fault ratio and the grain
size.
(53)
Microstructural Investigation of Modulated Structure in Electrolessly Deposited
Co-P Films, Naoki Fukumuro, Jin Nishiyama, Shinji Yae, and Hitoshi Matsuda, Trans. Mater. Res. Soc. Jpn., 35(1), 55-58 (2010).
The
depositing conditions were investigated for obtaining a modulated structure
that appeared between an amorphous structure and a columnar structure in
electroless Co-P alloy films. The microstructure of electroless Co-P films was
found to be sensitively dependent on the variation of the deposition rate
controlled by both the solution pH and the stirring strength. Uniform modulated
structure Co-P film was formed in the limited deposition rate range.
Cross-sectional transmission electron microscopy clarified that the modulated
structure Co-P film consists of a periodic array of granules less than 100 nm
separated by amorphous channels enriched with phosphorous. The modulated
structure Co-P film was comprised of hard and soft magnetic components.
(54)
Influence of Displacement Reaction on Electrodeposition of Noble Metal
Particles on Silicon, Shinji Yae, Megumi Kawai, Takashi Matsuda, Naoki
Fukumuro, and Hitoshi Matsuda, Trans.
Mater. Res. Soc. Jpn., 35(1),
73-76 (2010).
In
this paper, we investigate electrodeposition of Pt, Pd and Au particles on n-Si
using a double potential step method that applies single pulse potential of -1
to -8 V vs. SCE and then maintains constant potential at -0.3 V. An aqueous
solution of H2PtCl6, PdCl2 or HAuCl4
at pH 1.7 is used for the electrodeposition of each metal. The particle density
of Pt is increased with a negative shift of the pulse potential and then
remains nearly constant. The Pd particle density changes with the pulse
potential in a similar manner to the Pt particle case. The particle density of
Au is much higher than that of Pt, and it is independent of the pulse
potential. Immersion of bare n-Si wafers in the H2PtCl6
solution under the open-circuit condition deposits no particles but produces
silicon oxide. Immersion in a H2PtCl4 (Pt(II)) solution,
under the same condition as the H2PtCl6 (Pt(IV)) case,
deposits Pt particles on n-Si. Immersion in a HAuCl4 solution
deposits almost the same particle density of Au as electrodeposition. These
displacement reactions, which involve cathodic reduction of metal ions and
anodic oxidation of Si, influences the electrodeposition behavior.
(55)
Pd Assisted HF Etching of Si: Electrochemical Measurement, M. Tashiro, S. Yae,
Y. Morii, N. Fukumuro, and H. Matsuda, ECS
Trans., Vol. 33, No.16, 173-180 (2011).
Metal-assisted
HF etching of Si has attracted considerable attention as a new electroless
method that can produce porous Si by immersing metal-modified Si in a HF
solution without bias. Such etching generally uses not only metal-modified Si
but also an oxidizing agent. Palladium exhibits high activity in assisted
etching under dissolved-oxygen-free and dark conditions. In this study, we
investigate the Pd assisted HF etching of n-Si by electrochemical measurements.
The potential of Pd metal on Si is more negative than the potential of hydrogen
evolution at open circuit conditions. Anodic current generation of Pd-modified
Si electrodes at positive bias and the localization of etching under Pd films
at low thickness indicate that Pd catalyzes the anodic dissolution of Si and
the cathodic hydrogen evolution.
(56)
New Surface-Activation-Process for Electroless Deposition of Adhesive Metal
(Ni, Cu) Films on Si Substrates, S. Yae, K. Sakabe, N. Fukumuro, S. Sakamoto*,
and H. Matsuda, *Nippon Oikos Co., Ltd., ECS
Trans., Vol. 33, No.18, 33-37 (2011).
We
report a new surface-activation process for direct electroless deposition of
adhesive metal films on silicon (Si) substrates. This process, which
electrolessly forms metal nanorods in Si, consistsof three steps: Step 1)
displacement deposition of metal nanoparticles; Step 2) metal-particle-assisted
hydrofluoric acid etching for catalytic nanopore formation; and Step 3)
autocatalytic electroless deposition of metal film on the Si surface. In this
study, our new surface-activation process is successfully applied not only to nickel
and cobalt but also to adhesive copper film deposition on Si substrates.
(57)
Thermal Desorption Spectroscopic Study of Hydrogen in Electrodeposited Ni-P
Films, T. Takemoto, N. Fukumuro, S. Yae, and H. Matsuda, ECS Trans., Vol. 33, No.21, 11-15 (2011).
The
objective of this study is to reveal the atomistic state of hydrogen in
electrodeposited Ni-P films by thermal desorption spectroscopy. Two peaks
corresponding to the desorption of hydrogen occupying regular interstitial
sites and the break-up of vacancy-hydrogen (Vac-H) clusters were observed in
electrodeposited pure Ni film. With an increase in phosphorus content, the
crystallinity of electrodeposited Ni-P films decreased and the hydrogen
desorption from the interstitial sites and Vac-H clusters disappeared. The
amount of diffusible hydrogen increased abruptly with the increase in the
amorphous phase in Ni-P film.
(58)
Influence of Si Surface Condition on Electroless Displacement Deposition of Pt
Particles, K. Takami, S. Yae, K. Yamagishi, N. Fukumuro, and H. Matsuda, ECS Trans., Vol. 33, No.21, 17-24
(2011).
The
displacement reaction, which is the immersion of Si wafers into a metal-salt
solution containing HF, has been applied to prepare catalytic fine metal
particles for metal-assisted HF etching, photoelectrochemical solar cells, and
autocatalytic plating. The particle density of Pt particles deposited by
displacement reaction on n-Si was different based on the solution used for Si
chemical oxidation prior to the deposition. Particle density correlates not
with the electrical state density at the SiOx/Si interface but with the contact
angle of pure water and the microroughness of the oxidized n-Si surface. A
model of the deposition process of Pt particles on an oxidized n-Si surface is
proposed.
(59) Catalytic
nanopores for electroless deposition of adhesive metal films on silicon:
Applications to various silicon substrates including multi- and
micro-crystalline, Shinji Yae, Keisuke Sakabe, Tatsuya Hirano, Naoki
Fukumuro, and Hitoshi Matsuda, Phys. Stat. Sol. (c), 8(6),
1769-1773 (2011).
Metal-particle-assisted hydrofluoric acid etching
of silicon (Si) is a unique method of preparing Si nanopores with metal
nanoparticles at the bottom of each nanopore. Autocatalytic electroless
deposition, which is the conventional method to metalize nonmetallic
substrates, requires catalyzation of the substrates before deposition. For Si
substrates, obtaining adhesive metal films with conventional catalyzation
pretreatments is difficult. We recently developed a new method to produce
adhesive metal films on Si substrates using catalytic nanopores that consists
of three steps: 1) displacement deposition of metal nanoparticles; 2) Si
nanopore formation by metal-particle-assisted hydrofluoric acid etching; and 3)
autocatalytic electroless deposition of metal films. In this study, the new
method is applied not only to previously reported p-Si (100) 1 Ω cm substrates but also to various Si
substrates, such as low and high resistibility, p- and n-types, (100), (111),
and (110) planes, and single-, multi- and micro-crystalline substrates.
Adhesive and bright metal films were formed on all Si substrates.
(56) Rh電析膜中の水素誘起超多量空孔の影響, 福室直樹,成田真嗣,八重真治,松田 均, 表面技術, 62(6), 317-318 (2011)
Rh電析膜中の水素の存在状態とその効果について検討した。水素はRh膜中に過飽和に固溶して、多量の空孔、双晶、積層欠陥およびナノボイド等の欠陥構造を形成して存在する。水素誘起超多量空孔からの水素の脱離に伴う拡散促進効果によって、低温でRh膜の再結晶現象が認められた。
(57) Surface-Activation
Process for Electroless Deposition of Adhesive Metal (Ni-B, Cu) Films on Si
Substrates Using Catalytic Nanoanchors, Shinji Yae, Keisuke Sakabe, Naoki
Fukumuro, Susumu Sakamoto, and Hitoshi Matsuda, J. Electrochem. Soc., 158(9), D573-577 (2011).
Autocatalytic
electroless deposition, which is a conventional method to metalize nonmetallic
substrates, requires catalyzation of substrates before deposition. For silicon
(Si) substrates, obtaining adhesive metal films with conventional catalyzation
pretreatment is difficult. In this study, we develop a new surface-activation
process for the direct electroless deposition of adhesive metal films on Si
substrates that consists of three steps: (1) metal nanoparticle formation by
electroless displacement deposition; (2) Si nanopore formation by
metal-particle-assisted hydrofluoric acid etching; and (3) metal filling in
nanopores and metal-film formation on the whole Si surface by autocatalytic
electroless deposition. The metal nanorods in the Si act as catalytic
nanoanchors to promote autocatalytic electroless metal deposition and improve
the adhesion of the metal films on the Si substrates. This process was
successfully applied not only to nickel-boron alloy but also to copper film
deposition on Si substrates.
(58) Influence of hydrogen on room temperature recrystallisation of
electrodeposited Cu films: thermal desorption spectroscopy, N. Fukumuro, T. Adachi,
S. Yae, H. Matsuda and Y. Fukai, Trans.
Inst. Met. Finish., 89(4),
198-201 (2011).
The
mechanism of recrystallisation observed at room temperature in electrodeposited
Cu films has been examined in light of the enhancement of metal atom diffusion by
hydrogen induced superabundant vacancies. Thermal desorption spectroscopy
revealed that Cu films electrodeposited from acid sulphate bath containing some
specific additives showed a pronounced peak, which was ascribed to the break-up
of vacancy–hydrogen clusters.
The amount of desorbed hydrogen was comparable to that of vacancy type clusters
estimated in previous positron annihilation experiments. The grain size of Cu
films increased as hydrogen desorption proceeded. Such grain growths were not
observed in the films deposited from the baths without additives. These results
indicate that the room temperature recrystallisation of electrodeposited Cu
films is caused by hydrogen induced superabundant vacancies.
(59) 無電解ニッケルめっき液のゼロエミッションリサイクル, 高上豪倫, 大藪 剛, 川上
浩, 福室直樹, 八重真治,
松田 均, 表面技術, 62(12), 712-716 (2011).
A
new recycling electroless nickel plating system has been developed using nickel
hypophosphite as the source of metallic ions and as a reducing agent. In the system,
phosphite ions, which are deleterious for the plating process, are fixed as the
precipitate of calcium phosphite. Then they are removed from the solution.
During repetitive plating operations, we maintained the plating solution
composition and pH as almost constant values. The quantitative change of the
reaction products provides theoretical confirmation that the system can be
characterized as a ‘zero-emission-type
recycling model’.
(60)
アルゴンプラズマエッチングがシリコンへの金属微粒子無電解置換析出に及ぼす影響
藤原良太, 萩原泰三, 松田貴士, 江籠卓馬, 福室直樹, 八重真治, 松田
均
表面技術, Vol.63, pp.581-584 (2012)
Fine metal
particles can be formed on Si by electroless displacement deposition, in which
Si wafers are simply immersed into a metal-salt solution containing HF.
Depending on the kind of metal and the surface condition of Si substrates, the
particle density of deposited metal varies widely. Especially, Pt particle
density greatly changes according to the Si surface condition. In this study,
we investigate the influence of Ar-plasma etching of Si on the Pt particle
density. Single crystalline n-Si (100) wafers were etched by Ar plasma using a
radio frequency glow discharge spectrometer. An amorphous Si layer was formed
on etched Si surfaces. Pt particles, with the particle density of four hundred
times higher than that for non-etched Si wafers, were deposited by immersing
Ar-plasma-etched Si wafers in a H2PtCl6 solution
containing HF. The Pt particle density was decreased by removing the amorphous
layer and as well as chemical etching of single-crystalline Si wafer. It was
proved that the influence of the Ar-plasma-etching extended at least 0.5 μm to the interior of single-crystalline Si beneath the amorphous
layer.
(61)
ジニトロスルファト白金(U)酸浴から電析したPt膜中の水素
久永尚哉, 福室直樹,八重真治,松田 均
表面技術, Vol.63, pp.596-597 (2012)
著者らは金属の電気めっきの際に生じる水素共析について系統的に調べているが、本研究においては、ジニトロスルファト白金酸めっき液での電気めっきにおけるPt中の水素について調べた。めっき基材としてTiを用い、ジニトロスルファト白金酸(H2Pt(NO2)2SO4)水溶液でPtを約1μm電着させた。このPt膜中の水素の熱分離挙動および熱処理後のミクロ組織観察を透過型電子顕微鏡を用いて実施した。これらの実験から、ジニトロスルファト白金酸を用いたPtめっきではめっき層中に大量の水素が導入されており、熱処理によって水素の離脱が生じ、金属原子の拡散の活発化により結晶粒成長が進行することが明らかとなった。
(62)
Catalytic activity of noble metals for metal-assisted chemical etching of
silicon
S.
Yae, Y. Morii, N. Fukumuro, H. Matsuda
Nanoscale
Res. Lett., Vol.7, 352(pp.1-5) (2012)
Metal-assisted
chemical etching of silicon is an electroless method that can produce porous
silicon by immersing metal-modified silicon in a hydrofluoric acid solution
without electrical bias. We have been studying the metal-assisted hydrofluoric
acid etching of silicon using dissolved oxygen as an oxidizing agent. Three
major factors control the etching reaction and the porous silicon structure:
photoillumination during etching, oxidizing agents, and metal particles. In
this study, the influence of noble metal particles, silver, gold, platinum, and
rhodium, on this etching is investigated under dark conditions: the absence of
photogenerated charges in the silicon. The silicon dissolution is localized
under the particles, and nanopores are formed whose diameters resemble the size
of the metal nanoparticles. The etching rate of the silicon and the catalytic
activity of the metals for the cathodic reduction of oxygen in the hydrofluoric
acid solution increase in the order of silver, gold, platinum, and rhodium.
(63)
シリコン基板上に形成した金属ナノロッドの太さと無電解めっき膜の密着性
榎本将人, 八重真治, 阪本進, 福室直樹, 松田均
表面技術, Vol.63, pp.781-783 (2012)
著者らはこれまで、Si基板上への金属膜の形成において金属ナノロッドを利用することで密着性の向上を図ることに成功している。本報告においては、形成する金属ナノロッドの太さと形成する無電解めっき膜の密着性の関係を調べた。Si単結晶基板に対し、0.15 M HF‐1 mM AgNO3水溶液浸漬によるAgナノ粒子の形成、7.3 M HF水溶液への浸漬によるナノ孔の形成、および無電解メッキによるNi‐B膜の形成を行なった。テープを用いた密着性試験およびミクロ組織観察を実施した。これらの実験から、0.15 M HF‐1 mM AgNO3水溶液浸漬時間の増加とともにナノ粒子の粒径は大きくなり、これは密着性を向上させることにつながったことを明らかにした。
(64)
Metal-Assisted Chemical Etching of Silicon Using Oxygen as an Oxidizing Agent:
Influence of HF Concentration on Etching Rate and Pore Morphology
Metal-Assisted Silicon Dissolution
S.
Yae, Y. Morii, M. Enomoto, N. Fukumuro, H. Matsuda
ECS
Trans., Vol.50, No.37, pp.31-36 (2013)
Metal-assisted
chemical etching of silicon is an electroless method that can produce porous silicon
by immersing metal-modified silicon in a HF solution without electrical bias.
We have been studying this etching using dissolved oxygen as an oxidizing agent
and recently reported that the catalytic activity of noble metal particles
including silver, gold, platinum, and rhodium, influences the cathodic
reduction of oxygen and controls the etching rate. In this paper, we
investigate the influence of the HF concentration on the etching rate and the
pore morphology. In the case of high HF concentration, the etching rate is
independent of the HF concentration and depends on the oxygen concentration and
the catalytic activity of the metal particles. In the low HF concentration
case, the etching rate depends on the HF concentration and is independent of the
oxygen concentration and the catalytic activity. The pore morphology is also
changed by the HF concentration.
(65)
Hydrogen in Platinum Films Electrodeposited from Dinitrosulfatoplatinate
Solution
N.
Hisanaga, N. Fukumuro, S. Yae, H. Matsuda
ECS
Trans., Vol.50, No.48, pp.77-82 (2013)
The influence
of hydrogen on the microstructure of Pt films electrodeposited from a
dinitrosulfatoplatinate(II) solution was investigated with thermal desorption
spectroscopy, X-ray diffraction, transmission electron microscopy, and scanning
electron microscopy. Two pronounced desorption peaks were observed in the
thermal desorption spectrum of hydrogen from the Pt films. The total amount of
desorbed hydrogen in the range from 300 to 1100 K in the atomic ratio (H/Pt)
was 0.1. The deposited Pt film consisted of fine grains (〜10 nm) and many nano-voids. The lattice parameter of the Pt grains
was lower than that of bulk Pt. Drastic grain growth and reduction in the
lattice contraction occurred from heat treatment at a temperature corresponding
to the first hydrogen desorption peak of 500 K.
(66)
AFM Analysis for Initial Stage of Electroless Displacement Deposition of Silver
on Silicon Surface
T.
Ego, T. Hagihara, Y. Morii, N. Fukumuro, S. Yae, H. Matsuda
ECS
Trans., Vol.50, No.52, pp.143-153 (2013)
We deposit fine
metal particles on silicon (Si) by a displacement reaction, which is the
immersion of Si wafers into a metal-salt solution containing hydrofluoric acid,
that consists of a local cathodic reduction of metal ions and a local anodic
dissolution of Si. In this study, the displacement deposition of silver (Ag)
nanoparticles on the Si(111) surface with an atomic step-terrace structure is
investigated by atomic force microscopy. Ag particles are uniformly deposited
on the Si surface without influence of the step-terrace structure. The particle
density of the deposited Ag decreases and then increases with immersion times
between 1 and 15 s. The step-terrace structure disappears and nanoholes are
formed by an immersion time of 15 s. We propose a model of Ag particle density
and Si surface changes with time.
(67)
Electroless Metallization of Silicon Using Metal Nanoparticles as Catalysts and
Binding-Points Electrodeposition and Semiconductor Metallization
S.
Yae, M. Enomoto, H. Atsushiba, A. Hasegawa, C. Okayama, N. Fukumuro, S.
Sakamoto, H. Matsuda
ECS
Trans., Vol.53, No.6, pp.99-103 (2013)
Gold
nanoparticles on silicon work not only as catalysts to initiate autocatalytic
electroless metal deposition but also as bindingpoints between the deposited
metal film and the silicon surface. Conventional catalysts of autocatalytic
electroless metal deposition, such as palladium and silver, require heat
treatments or anchor formation to obtain practical adhesion of deposited metal
films on silicon. Gold nanoparticles can directly produce adhesive metal films
on flat silicon surfaces without any treatments. Crosssectional transmission
electron microscopic observation reveals that gold nanoparticles form an alloy
with silicon at the room temperature. This alloy is expected to improve the
adhesion of metal film on silicon.
(68)
Noble Metal Recovering by Electroless Displacement Deposition on Silicon Powder
K.
Fukuda, S. Yae, N. Fukumuro, S. Sakamoto, H. Matsuda
ECS
Trans., Vol.53, No.19, pp.69-76 (2013)
We developed a
low-cost, efficient method to recover all noble metals including gold, silver,
palladium, rhodium, platinum, osmium, ruthenium, and iridium from aqueous
solutions by simply adding hydrofluoric acid (HF) and silicon (Si) powder. The
recovery rate depends on the specific surface area of Si, the HF concentration,
and the solution temperature. Our method selectively recovers noble metals and
copper from a mixture solution of noble and base metal ions, such as nickel, cobalt,
and iron, and obtains pure noble metal powder by dissolving Si. The Si powder
and the HF solution are expected to be supplied from semiconductor industries,
such as the sawdust Si of wafering or dicing and the waste HF solution of wafer
cleaning or etching. This new method recovers noble metals from waste (urban
mines) using other waste; it also has green electroless deposition.
(69)
前処理によりシリコン表面に形成された金属ナノロッドの長さと無電解めっき膜の密着性
榎本将人、八重真治、阪本進、福室直樹、松田均
表面技術、Vol.64、pp.682-684 (2013)
We have
developed a surface-activation process for the direct electroless deposition of
adhesive metal films on Si substrates. This process forms metal nanorods in Si
by using electroless displacement metal nanoparticle deposition,
metal-nanoparticle-assisted HF etching of Si, and autocatalytic electroless Ni
deposition. The adhesion of metal films increases with metal nanorod length.
(70)Hydrogen-Induced
Enhancement of Atomic Diffusion in Electrodeposited Pd films
N.
Fukumuro, M. Yokota, S. Yae, H. Matsuda, Y. Fukai*
*Institute of Industrial Science, The University of Tokyo
J.
Alloys Compd., Vol.580 S1, pp.55-57 (2013)
The hydrogen-induced enhancement of atomic diffusion in electrodeposited
Pd films on Cu substrate has been investigated with thermal desorption
spectroscopy, X-ray diffraction, and transmission electron microscopy. The
hydrogen content in Pd films (x = H/Pd) was 2.2〜7.7×10-2 and
decreased with time at room temperature. For Pd films with lower hydrogen
contents (x ≦ 4.0×10-2),
lattice contraction and grain growth proceeded as hydrogen desorption
proceeded. For Pd films with higher hydrogen contents (x ≧ 5.8×10-2), fine grains became
large columnar grains, and a large-grained Cu-Pd interlayer was formed by
interdiffusion between the Cu substrate and the Pd film.
解説・著書など
(1) 高効率低コストな新型太陽電池(白金超微粒子による n-Si光電極表面の修飾), 八重真治,
化学と工業, Vol. 51,
199 (1998)
(2) シリコン半導体電極を用いる高効率湿式太陽電池 −金属微粒子による表面修飾−, 八重真治, 松田 均, 中戸義禮, 溶融塩および高温化学, 43(1), 64-76 (2000).
(3) めっき技術の湿式太陽電池への応用 −半導体電極上への金属微粒子析出−, 八重真治, 松田 均, 中戸義禮, 表面科学, 22(6), 357-363 (2001).
(4) 太陽光水分解・湿式太陽電池, 八重真治,福室直樹,松田 均, マテリアルインテグレーション, 19(2), 21-25(2006).
(5) Electrochemical Deposition
of Metal Nanoparticles on Silicon, Shinji Yae, Naoki Fukumuro, and Hitoshi
Matsuda, Progress in Nanoparticles
Research, Edited by C. T. Frisiras, Nova Science Publishers, Inc., New
York, Ch. 5, pp. 117-135 (2008).
(6) “Water
splitting to produce solar hydrogen using silicon thin film”, S. Yae, SPIE Newsroom,
http://newsroom.spie.org/x5820.xml (2007).
(7) 「シリーズ研究室紹介1」 兵庫県立大学 大学院工学研究科 物質系工学専攻 物質・エネルギー部門 材料表面工学研究グループ, 表面技術, 60(1), 41-42 (2009).
(8) Porous Silicon Formation by
Metal Particle Enhanced HF Etching, Shinji Yae, Naoki Fukumuro, and Hitoshi
Matsuda, Electroanalytical Chemistry
Research Trends, Edited by K. Hayashi, Nova Science Publishers, Inc.,
Hauppauge, NY, Ch.4, 107-126 (2009).
(9) 「会員紹介(大学・研究機関)」 兵庫県立大学 大学院工学研究科 物質系工学専攻 材料表面工学研究グループ, めっき技術, 22(12), 35-37 (2009)
(10) 創立60周年記念号 踏み出そう!新たな一歩 第1部 座談会U 表面技術に見る夢,新井
進,上田幹人,大貝 猛,蒲生西谷美香,邑瀬邦明,八重真治,松原 浩,表面技術,61(2), 95-107 (2010).
(11) 創立60周年記念号 踏み出そう!新たな一歩 第2部 最近の技術の進歩 2.4 シリコンのアノード酸化,八重真治,表面技術,61(2), 162-163 (2010).
(12) 「研究紹介」 シリコン上への高密着性無電解めっき膜形成とめっき膜に含まれる水素の解析, 八重真治, 福室直樹, 松田
均, めっき技術, 24(6), 43-48 (2011).
(13) Solar to Chemical
Conversion Using Metal Nanoparticle Modified Low-Cost Silicon Photoelectrode,
Shinji Yae, in Solar Cells - New Aspects
and Solutions, Edited by Leonid Kosyachenko, InTech, Rijeka, Croatia, Ch.
11, pp.231-254 (2011). open-access:
http://www.intechopen.com/articles/
show/title/solar-to-chemical-conversion-using-metal-nanoparticle-modified-low-cost-silicon-photoelectrode
(14) めっき膜中の水素の挙動
福室直樹,八重真治,松田 均,深井 有*
*東京大学生産技術研究所
表面技術, Vol.63, pp.24-28 (2012)
めっきプロセスにおいては電気化学反応により水素の発生が起こるが、発生した水素はめっき液から大気へ放出されるだけでなく、めっき層中へも侵入する。この水素がめっき層の特性に種々の影響を与えることは経験的に良く知られていることであるが、系統的な解明はこれまで十分になされて来なかった。近年、この問題に対して研究する動きがあり、本稿においてもその一部を紹介した。Ni電析膜中への水素の共析と存在状態およびめっき膜の構造への水素の影響について示した。前者においては、めっき析出過程における水素の挙動(めっき液中への放出、めっき膜中への侵入、基板への侵入および透過)について示した。後者では、Cu電析膜の室温再結晶とRh電析膜の再結晶温度の低下の事例を示した。
(15)
Metal Nanorods in Silicon: Electroless Preparation and Application for Adhesive
Film Formation
S.
Yae, S. Sakamoto, N. Fukumuro, H. Matsuda
Advances
in Nanotechnology, Volume 10, Ch. 11., Edited by Zacharie Bartul and Jerome
Trenor, Nova Science Publishers, Inc., Hauppauge, NY, pp.319-336 (2012)
Metal nanorods
in a silicon (Si) matrix, are produced by an electroless process that consists
of three steps: 1) metal nanoparticle formation on silicon by electroless
displacement deposition using a metal salt solution containing hydrofluoric
acid; 2) silicon nanopore formation by metal-particle-assisted hydrofluoric
acid etching; and 3) metal filling in nanopores by autocatalytic electroless
deposition. Silver nanoparticles produce silicon nanopores whose sizes are a
few tens of nm in diameter and ca. 50 nm deep. Gold nanoparticles produce finer
and straighter nanopores than the silver case. These nanopores are filled with
a nickel, cobalt, copper, or those alloy by autocatalytic electroless
deposition using dimethylamine-borane, phosphinate, or formaldehyde as a
reducing agent. The important features of this process are the following: the
size and length of metal nanorods can be controlled by changing the size of
metal nanoparticles and the metal-particle-assisted etching time, respectively;
and the metal nanoparticles, i.e., the initiation points of the autocatalytic
metal deposition, are present on the bottoms of the silicon nanopores. Adhesive
metal-film formation on silicon substrates is important for obtaining
infallible electrical contacts in various devices. Autocatalytic electroless
deposition, which is the conventional method for metalizing nonmetallic
substrates, requires surface activation (catalyzation pretreatment) of
substrates.
(16) シリコンの多孔質化による光反射防止
八重真治
応用電子物性分科会誌、Vol.19、pp.18-23 (2013)
太陽電池の高効率化を目的としたシリコンのテクスチャー化による光反射防止について、アルカリエッチングや酸エッチング、金属微粒子援用エッチングなどの技術を説明した。金属微粒子援用エッチングは新しい技術で、銀微粒子と過酸化水素の組み合わせを中心に、単純だが多様な方法が提案されている。単結晶と多結晶とを問わず、従来法よりも高い光反射防止効果を低いコストで得られる方法として今後の展開が期待される.
(17) めっき膜中の水素の挙動解析
福室直樹、八重真治、松田 均
めっき技術、Vol.26、No.5、pp.1-4
(2013)
(18) 誌上セミナー 太陽電池とシリコンの表面処理 第1回 太陽電池の仕組み, 意義, 課題
八重真治
めっき技術、Vol.26、No.6、pp.59-70
(2013)
(19) 機器紹介 昇温脱離分析
福室直樹、八重真治
めっき技術、Vol.26、No.6、pp.101-105
(2013)
特許
(1) 無電解ニッケルめっき浴, 松田 均, 八重真治, 清水範征, 公開特許公報(A), 特許公開2001-214279
(2001).
(2) 太陽電池用多結晶シリコン基板の製造方法・松村道雄, 八重真治, 松田 均, 国際公開 WO2003/105209 (2003).
(3) 無電解めっきのセンシタイジング液及びそれを用いて絶縁体表面を金属化する方法, 八重真治, 松田 均, 特許公開2005−248287 (2005).
(4)
シリコンを母材とする複合材料及びその製造方法, 八重真治, 平野達也, 松田 均, 特許公開2009−209420, 国際公開WO2009/110428 (2009).
(5)
複合材料及びその製造方法、並びにその製造装置, 八重真治, 平野達也, 松田 均, 国際公開WO2009/110431 (2009).
(6)
複合材料及びその製造方法、並びにその製造装置, 八重真治, 平野達也, 松田 均, 特許公開2010−47790, 国際公開WO 2010/021166 (2010).
学会・講演会での発表
ポスター賞受賞
田中裕三、福室直樹、八重真治、松田 均、深井 有、「電解Niめっき膜中の水素の挙動」、電気化学会第76回大会、2009年3月29日、京都市・京都大学、PS34
白金電析のQCM測定, 矢折和真,福室直樹, 八重真治, 松田 均, 第56回マテリアルズ・テーラリング研究会, (2010)
電解Co-Ni合金薄膜中の水素挙動, 山田一輝, 福室直樹, 八重真治, 松田 均, 第56回マテリアルズ・テーラリング研究会, (2010)
Si 上への白金ナノ粒子の電気化学析出におよぼすPt(IV) からPt(II) への還元反応の影響, 八重真治, 矢折和真, 福室直樹, 松田 均, 第20回日本MRS学術シンポジウム, Abs. D-07
白金電析のQCMによる解析, 矢折和真,福室直樹, 八重真治, 松田
均, 第12回関西表面技術フォーラム, pp.14-15 (2010)
ポスター賞受賞
電析Co-Ni合金膜の構造と水素 〜硫酸浴と塩化物浴の比較〜, 山田一輝, 福室直樹, 八重真治, 松田 均, 第12回関西表面技術フォーラム, p.68 (2010)
パラジウムを用いるシリコンの金属援用HFエッチング, 八重真治, 田代雅之, 森井友麻, 福室直樹, 松田 均, 表面技術協会第123回講演大会講演要旨集, p.198 (2011)
基調講演 めっき膜中の水素とその効果(U), 松田 均,八重真治,福室直樹, 深井 有*, *東京大学生産技術研究所, 日本金属学会第148回講演大会概要, p.64 (2011)
アモルファス合金めっき膜中の水素の存在状態 〜Ni-PおよびNi-Bめっき〜, 福室直樹, 竹本達哉, 八重真治, 松田 均, 深井 有*, *東京大学生産技術研究所, 日本金属学会第148回講演大会概要, p.65 (2011)
めっき膜の微細構造に及ぼす膜中水素の影響, 成田真嗣, 福室直樹, 八重真治, 松田 均, 深井 有*, *東京大学生産技術研究所, 日本金属学会第148回講演大会概要,
p.64 (2011)
無電解Co-P/AuめっきとSn-Ag-Cuはんだの接合界面の構造解析, 神田佳美, 福室直樹, 八重真治, 松田 均, 藤波知之*, *日本エレクトロプレーティング・エンジニヤース, 日本金属学会第148回講演大会概要,
p.179 (2011)
無電解析出させた銀ナノ粒子を触媒とするシリコン上へのナノアンカー形成,
八重真治, 坂部佳祐, 福室直樹, 阪本 進*, 松田 均, *日本オイコス, 電気化学会第78回大会講演要旨集,
CD-ROM, 1J-10 (2011)
'Invited' Metal-Assisted
Hydrofluoric Acid Etching of Silicon, S. Yae, N. Fukumuro, H. Matsuda, Villa
Conference on Interactions Among Nanostructures, p. 127 (2011)
依頼講演 無電解めっきと太陽電池, 八重真治, 電気鍍金研究会講演 めっき技術, Vol. 24, No.4, pp.15-20
(2011)
Influence of hydrogen on
room-temperature recrystallization of electrodeposited Cu films; thermal
desorption spectroscopy, N. Fukumuro, T. Adachi, S. Yae, H. Matsuda, Y. Fukai*,
*The University of Tokyo, 7th International Conference on Diffusion in Solids
and Liquids, Book of Abs. (CD-ROM) pp.96-97 (2011)
金属ナノロッドをアンカーとするSi上への無電解めっき膜形成, 坂部佳祐, 榎本将人, 阪本進, 福室直樹, 八重真治, 松田均, 阪本 進*, *日本オイコス, 電気化学秋季大会講演要旨集, p.177 (2011)
クロロ錯体水溶液からの白金析出のEQCM解析, 矢折和真, 福室直樹, 八重真治, 松田均, 電気化学秋季大会講演要旨集,
p.209 (2011)
Electroless Deposition of
Adhesive Cu Film on Si Using Metal Nanoanchors, K. Sakabe, S. Sakamoto*, N.
Fukumuro, S. Yae, H. Matsuda, *Nippon Oikos Co., Ltd., The 62nd Annual Meeting
of the International Society of Electrochemistry, p.s03-P-023 (2011)
EQCM Study on Electrodeposition
of Pt from Chloro Complex Solution, K. Yaori, N. Fukumuro, S. Yae, H. Matsuda,
The 62nd Annual Meeting of the International Society of Electrochemistry, p.
s10-P-010 (2011)
Gold nanoparticles on silicon
catalysts and binding-points for electroless metal film coating, S. Yae, A.
Hasegawa, C. Okayama, S. Sakamoto*, N. Fukumuro, H. Matsuda, *Nippon Oikos Co.,
Ltd., International Symposium on Renewable Energy & Materials Tailoring, p.
2B2 (2011)
AFM analysis for electroless
displacement deposition of noble metal on silicon surface, T. Ego, N. Fukumuro,
S. Yae, H. Matsuda, International Symposium on Renewable Energy & Materials
Tailoring REMT2011, p. P1 (2011)
EQCM study on electrodeposition
of platinum, K. Yaori, N. Fukumuro, S. Yae, H. Matsuda, International Symposium
on Renewable Energy & Materials Tailoring REMT2011, p. P2 (2011)
めっき膜中の水素とその効果 (U), 福室直樹, 八重真治, 松田 均, 深井 有*, *東京大学生産技術研究所, ナノプレーティング研究会第38回例会,
p.25 (2011)
ArプラズマエッチングしたSi上への貴金属粒子析出過程, 藤原良太, 福室直樹, 八重真治, 松田 均, 表面技術協会第124回講演大会講演要旨集, p.35 (2011)
Siの金属微粒子援用HFエッチングに及ぼす金属の溶存酸素還元触媒能の影響, 森井友麻, 福室直樹, 八重真治, 松田 均, 表面技術協会第124回講演大会講演要旨集, p.111 (2011)
はんだ接合界面へのCoめっきの応用, 神田佳美, 福室直樹, 八重真治, 松田 均, 藤波知之*, *日本エレクトロプレーティング・エンジニヤース, 第13回関西表面技術フォーラム,
p.14 (2011)
優秀講演賞受賞 (紹介記事 めっき技術, 25(2),
41 (2012).)
Pt電析膜中の水素とその効果, 久永尚哉, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム,
p.20 (2011)
紹介記事(注目講演) めっき技術, 25(3),
45 (2012).
CuおよびNi電析膜中の水素と固体拡散, 安達貴良, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム, p.21 (2011)
紹介記事(注目ポスター発表) めっき技術, 25(4),
52 (2012).
Au電析膜中の水素, 仲 大輔, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム,
p.57 (2011)
紹介記事(注目ポスター発表) めっき技術, 25(4),
53 (2012).
Auナノ粒子を接合点とするSi上への高密着性無電解めっき膜形成, 長谷川 綾, 福室直樹, 八重真治, 阪本 進*, 松田 均, *日本オイコス, 第13回関西表面技術フォーラム,
p.57 (2011)
紹介記事(注目ポスター発表) めっき技術, 25(4),
54 (2012).
貴金属の新規リサイクルプロセス, 大野由希子, 福室直樹, 八重真治, 松田 均, 第13回関西表面技術フォーラム,
p.75 (2011)
関西電気化学奨励賞 受賞
水素ラジカルによるはんだの還元と再酸化抑制効果, 萩原泰三*, 大野恭秀*, 福室直樹, 八重真治, 松田 均, *神港精機, 第3回関西電気化学研究会, p. P24 (2011)
AFM Analysis For Electroless
Displacement Deposition of silver on Silicon Surface, 江籠卓馬, 八重
真治, 福室 直樹, 松田 均, 第21回日本MRS学術シンポジウム,
p. ABSM14 (2011)
無電解置換析出を利用した貴金属の新規リサイクルプロセス, 大野由希子,八重真治,福室直樹,阪本 進*,松田 均, 表面技術協会第125回講演大会講演要旨集, p.32 (2011)
Auナノ粒子を触媒および接点とするSi上への無電解めっき, 長谷川綾,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第125回講演大会講演要旨集, p.33 (2011)
金属ナノロッドによるシリコン上への高密着性無電解めっき膜の形成 〜ナノロッドの形状と密着性〜, 榎本将人,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第125回講演大会講演要旨集, p.179 (2011)
プラズマ処理をしたSi上へのPt微粒子の無電解置換析出, 萩原泰三,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第125回講演大会講演要旨集, p.182 (2011)
銅めっき膜の室温再結晶に及ぼす諸因子の検討, 福室直樹,八重真治,松田 均,深井 有* , 日本金属学会第150回講演大会講演概要(CD-ROM) S1・13 (2012)
Catalytic Activity of Noble
Metals for Hydrofluoric Acid Etching of Silicon, S. Yae, Y. Morii, N. Fukumuro,
H. Matsuda, Extended Abstracts of the 8th International Conference Porous
Semiconductors Science and Technology pp.34-35 (2012)
Hydrogen-Induced Enhancement of
Atomic Diffusion in Electrodeposited Pd films, N. Fukumuro, M. Yokota, S. Yae1,
H. Matsuda, Y. Fukai*, 8th International Conference on Diffusion in
Solids and Liquids Book of Abs. (CD-ROM) p.114 (2012)
めっき膜における水素誘起効果, 福室直樹,八重真治,松田 均,深井 有*, 第10回水素量子アトミクス研究会,アブストラクト集,p.9 (2012)
シリコン上への銀の無電解置換析出初期に観察される溶解再析出, 江籠卓馬,八重真治,萩原泰三,福室直樹,松田 均, 第62回マテリアルズ・テーラリング研究会 (2012)
ジニトロスルファト白金(U)酸浴から電析したPt膜中の水素, 久永尚哉,福室直樹,八重真治,松田 均, 第62回マテリアルズ・テーラリング研究会 (2012)
Ni電析中の水素の挙動 〜めっき膜に残留する水素と透過する水素〜, 下津敬二,福室直樹,八重真治,松田
均, 第62回マテリアルズ・テーラリング研究会 (2012)
Recycling Process of Noble Metal
Using Electroless Displacement Deposition on Silicon, S. Yae, Y. Ohno, N.
Fukumuro, H. Matsuda, The 63rd Annual Meeting of the International Society of
Electrochemistry Book of Abs. (CD-ROM) (2012)
第14回優秀講演賞
受賞 Pt電析膜中の水素と結晶粒成長, 久永尚哉, 福室直樹, 八重真治, 松田均, 深井 有, 表面技術協会第126回講演大会講演要旨集, p.77 (2012)
第1回学生優秀講演賞
受賞 ステップテラス構造を持つシリコン上への銀の無電解置換析出のAFM 観察, 江籠卓馬,八重真治,萩原泰三,福室直樹,松田 均, 表面技術協会第126回講演大会講演要旨集, p.78 (2012)
Fe-C 合金電析膜の含有水素の定量と組織解析, 水田泰徳,福室直樹, 八重真治, 松田均, 深井 有*, 表面技術協会第126回講演大会講演要旨集, p.48 (2012)
Siの金属微粒子援用HFエッチングにおけるカソード反応の影響, 森井友麻,八重真治,福室直樹,阪本 進,松田 均, 表面技術協会第126回講演大会講演要旨集, p.77 (2012)
Hydrogen in Platinum Films
Electrodeposited from Dinitorosulfatoplatinate Solution, N. Hisanaga, N.
Fukumuro, S. Yae, H. Matsuda, PRiME 2012(2012年電気化学日米合同大会) Abs. #186
Metal-Assisted Chemical Etching
of Silicon Using Oxygen as an Oxidizing Agent, S. Yae, Y. Morii, M. Enomoto, N.
Fukumuro, H. Matsuda, PRiME 2012(2012年電気化学日米合同大会) Abs.
#2371
AFM Analysis for Initial Stage
of Electroless Displacement Deposition of Silver on Silicon Surface, T. Ego, S. Yae, T.
Hagihara, N. Fukumuro, H. Matsuda, PRiME 2012(2012年電気化学日米合同大会) Abs. #3306
Hydrogen-Induced Enhancement of
Atomic Diffusion in Electrodeposited Pd films, N. Fukumuro, M. Yokota, S. Yae1,
H. Matsuda, Y. Fukai*, International Symposium on Metal-Hydrogen
Systems, Abs. p.73 (2012)
金属微粒子援用HFエッチングを用いたSi微細孔の形成, 森井友麻,八重真治,福室直樹,阪本 進,松田 均, 第29回ARS伊豆長岡コンファレンス予稿集, p.92 (2012)
無電解析出を利用した貴金属の新規リサイクルプロセス, 福田健二, 江籠卓馬, 福室直樹, 八重真治, 松田
均, 第4回関西電気化学研究会, P20 (2012)
電析Pd膜中の水素とその効果, 横田正哉, 福室直樹, 八重真治, 松田
均, 第14回関西表面技術フォーラム, p.12 (2012)
Ni電析中の水素の挙動に及ぼす基板の水素透過性の影響, 下津敬二, 福室直樹, 八重真治, 松田 均, 第14回関西表面技術フォーラム,
p.13 (2012)
Si上の金属ナノロッドの太さが無電解めっき膜の密着性に与える効果, 榎本将人,八重真治,阪本 進,福室直樹,松田 均, 第14回関西表面技術フォーラム,
p.44 (2012)
金属援用エッチングによるシリコンの多孔質化−触媒ナノ粒子の2 つの役割−, 八重真治、福室直樹、松田 均, 表面技術協会第127回講演大会講演要旨集 pp.327-330 (2013)
電気化学的透過法によるNi 電析中の水素の挙動解析〜基板の水素透過性の影響〜, 下津敬二、福室直樹、八重真治、松田
均, 表面技術協会第127回講演大会講演要旨集 p.29 (2013)
Pt 電析膜中の水素が膜の構造に及ぼす影響, 久永尚哉、福室直樹、八重真治、松田 均、深井 有*, 表面技術協会第127回講演大会講演要旨集 p.122 (2013)
金ナノ粒子を触媒としてシリコン上に形成した無電解めっき膜の密着性, 厚芝博之、八重真治、福室直樹、阪本進、松田 均, 表面技術協会第127回講演大会講演要旨集 p.124 (2013)
銅微粒子を用いたSi の金属援用HF エッチング, 永尾 圭、八重真治、福室直樹、松田 均, 表面技術協会第127回講演大会講演要旨集 p.194 (2013)
シリコン上への銀の無電解置換析出挙動, 江籠卓馬、八重真治、萩原泰三、福室直樹、松田 均, 表面技術協会第127回講演大会講演要旨集 p.267 (2013)
めっき膜中の水素とその効果(V), 福室直樹、八重真治、松田 均、深井 有*, 日本金属学会第152回講演大会講演概要(CD-ROM) p.S2・1 (2013)
銅電析膜中の水素と室温再結晶, 吉田裕輝、福室直樹、八重真治、松田 均、深井 有, 日本金属学会第152回講演大会講演概要(CD-ROM) p.54 (2013)
超音波リボンボンダによる異種金属接合の界面構造, 福室直樹、八重真治、松田 均、坂東裕次* (*三菱電機エンジニアリング), 日本金属学会第152回講演大会講演概要(CD-ROM) p.28 (2013)
低コストかつ高効率で全貴金属に適用できる新しい回収法, 福田健二、八重真治、福室直樹、松田
均, 第2回JACI/GSCシンポジウム(第13回GCSシンポジウム) p.257 (2013)
ウェットプロセスによる低コスト高効率太陽電池の作製, 榎本将人、八重真治、阪本
進、福室直樹、松田 均, 第2回JACI/GSCシンポジウム(第13回GCSシンポジウム) p.172
(2013)
金属ナノ粒子を触媒および接合点として用いたシリコン上への無電解めっき, 榎本将人、八重真治、厚芝博之、折田由紀子、阪本
進、福室直樹、松田 均, 第65回マテリアルズ・テーラリング研究会 (2013)
優秀賞 受賞 電析Pd膜中の水素とその効果, 横田正哉、八重真治、福室直樹、松田
均, 第65回マテリアルズ・テーラリング研究会 (2013)
Electroless
Metallization of Silicon Using Metal Nanoparticles as Catalysts and
Binding-Points, M. Enomoto, S. Yae, H. Atsushiba, N. Fukumuro, S. Sakamoto, H.
Matsuda, 223rd ECS Meeting, Abs. 2594 (2013)
Noble
Metal Recovering by Electroless Displacement Deposition on Silicon Powder, K. Fukuda, S. Yae, N.
Fukumuro, H. Matsuda, 223rd ECS Meeting, Abs. 2628 (2013)
めっきにおける水素誘起超多量空孔, 福室直樹、八重真治、松田 均、深井 有*, 日本金属学会第153回講演大会講演概要(CD-ROM) p.S1・8 (2013)
電析Agめっき膜中の水素の挙動, 草別 孝、福室直樹、八重真治、松田
均、深井 有, 表面技術協会第128回講演大会講演要旨集 p.28 (2013)
シリコン上に形成した金属ナノロッドの形状と無電解めっき膜の密着性, 榎本将人、八重真治、折田由紀子、阪本 進、福室直樹、松田 均, 表面技術協会第128回講演大会講演要旨集 p.76 (2013)
シリコン上への無電解置換析出を用いた貴金属の回収, 福田健二、八重真治、福室直樹、松田 均, 表面技術協会第128回講演大会講演要旨 p.191 (2013)
Auナノ粒子を触媒としたSi上への無電解めっき膜形成 〜基板とめっき膜界面の構造と密着性〜, 厚芝博之、八重真治、折田由紀子、阪本
進、福室直樹、松田 均, 電気化学秋季大会講演要旨集 p.151
(2013)
Fe-C合金電析膜における表面炭素の放射光軟X線吸収分析, 村松康司、西谷 康、植村智之、水田泰徳、福室直樹、松田 均, 第74回応用物理学会秋季学術講演会講演予稿集(CD−ROM) p.19A-A13-6 (2013)
Antireflection
and metal-electrode-production using catalytic nanoparticles for efficient
silicon solar cells, S. Yae, S. Sakamoto, Y. Orita, K. Yamakawa, H. Atsushiba, M.
Enomoto, N. Fukumuro, H. Matsuda, The 23rd Photovoltaic Science and Engineering
Conference (PVSEC-23), #1273 (2013)
金属微粒子援用エッチングによる太陽電池の高効率化, 八重真治, 第30回ARS弘前コンファレンス予稿集 pp.47-52 (2013)
金属ナノ粒子を底にもつ多孔質シリコンを利用した高信頼性無電解めっき,
榎本将人、八重真治、阪本 進、福室直樹、松田 均, 第30回ARS弘前コンファレンス予稿集 p.116 (2013)
金属微粒子援用HFエッチングを用いて形成したシリコンの極薄多孔質層による反射防止, 山川加能、八重真治、榎本将人、福室直樹、阪本 進、松田 均, 第30回ARS弘前コンファレンス予稿集 p.122 (2013)
電析Pd膜中の水素の存在状態とその効果, 横田正哉、福室直樹、八重真治、松田
均、深井 有*, 第15回関西表面技術フォーラム p.18 (2013)
Fe-C合金電析膜に含まれる水素の存在状態の解析, 小嶋冴香、福室直樹、八重真治、松田
均、深井 有*, 第15回関西表面技術フォーラム p.68 (2013)
電析Au膜中に含まれる水素の定量と構造解析, 中條貴浩、福室直樹、八重真治、松田
均、深井 有*, 第15回関西表面技術フォーラム p.63 (2013)
平成25年度 関西電気化学奨励賞 受賞 シリコン上に形成した金属ナノロッドの形状制御と無電解めっき膜の密着性, 榎本将人、八重真治、阪本 進、福室直樹、松田 均, 2013年度第3回関西電気化学研究会 p.21 (2013)
Noble
Metal Nanoparticles on Silicon for Nano/Micro Structure Formation, S. Yae, International
Conference on Small Science (ICSS2013), pp.186-187 (2013)