発表論文

1995-2000

1995


  1. Precise Angle and Position Detection Utilizing Optical Interface on Metal-Oxide-Semiconductor-Type Position-Sensitive Detector
    H.Niu, T.Shiraishi, H.Yoshida, T.Matsuda and S.Kishino
    Jpn. J. Appl. Phys., 34, 638 (1995).

  2. Thermal Behavior of Deep Levels Correlated with Iron in Silicon Metal-Oxide-Semiconductor Structure
    H.Kishino, S.Iwamoto, H.Yoshida, H.Niu and T.Matsuda
    J. Appl. Phys., 77, 2199 (1995).

  3. Preparation of Bi4Ti3O12 Films by MOCVD and Their Applications to Memory Devices
    T.Nakamura, R.Muhammet, M.Shimizu and T.Shiosaki
    Integrated Ferroelectrics, 6, 35 (1995).

  4. Preparation of PZT Thin Films by MOCVD using a New Pb Precursor
    M.Shimizu, M.Sugiyama, H.Fujisawa and T.Shiosaki
    Integrated Ferroelectrics, 6, 155 (1995).

  5. Characterization of PZT Films Grown by MOCVD on 6-8 Inch Si Wafers
    T.Shiosaki, M.Shimizu and M.Kinoshita
    Integrated Ferroelectrics, 7, 111 (1995).

  6. Phase and Composition Control of PZT Thin Films
    T.Shiosaki and M.Shimizu
    Ferroelectrics 170, 47 (1995).

  7. Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(Zr,Ti)O3 Thin Films
    T.Shiosaki and M.Shimizu
    Integrated Ferroelectrics, 9, 13 (1995).

  8. MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications
    M.Shimizu and T.Shiosaki
    Mat. Res. Soc. Symp. Proc., 361, 295 (1995).

  9. Properties of Ferroelectric (Pb,La)(Zr,Ti)O3 Thin Films by MOCVD
    M.Shimizu, H.Fujisawa and T.Shiosaki
    Integrated Ferroelectrics, 10, 23 (1995).

  10. MOCVD of Ferroelectric PLZT Thin Films and Their Properties
    M.Shimizu, H.Fujisawa and T.Shiosaki
    Microelectric Engineering, 29, 173 (1995).

  11. Thermal Effects in Properties of Photovoltaic Currents of Pb(Zr,Ti)O3 Thin Films
    A.Matsumura, Y.Kamaike, T.Horiuchi, M.Shimizu, T.Shiosaki and K.Matsushige
    Jpn. J. Appl. Phys., 34, 5258 (1995).

  12. Electrical Properties of LiNbO3 Thin Films by RF Magnetron Sputtering and Bias Sputtering
    T.Nishida, M.Shimizu, T.Horiuchi, T.Shiosaki and K.Matsushige
    Jpn. J. Appl. Phys., 34, 5113 (1995).

  13. Characterization of PZT and PLZT Thin Films Grown by MOCVD on 6-8 Inch Si Wafers
    T.Shiosaki, H.Fujisawa and M.Shimizu
    Proc. the 3rd Int. Symp. Sputtering & Plasma Processes, Tokyo, Japan, p.93 (1995).

  14. 「強誘電体薄膜メモリ」
    塩嵜忠，阿部東彦，武田英次，津屋英樹編，　分担執筆　清水勝
    （（株）サイエンスフォーラム，1995） pp.105-122

  15. 高誘電率薄膜としてのPLZTの可能性
    清水勝
    ULSI高誘電率薄膜技術フォーラム'95，pp.3-1-3-9 (1995) .

  16. MOCVD法によるPZT系薄膜の成長と評価
    清水勝
    日本工業技術振興協会セミナー，pp.91-102 (1995) .

1996


  1. Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by MOCVD
    M.Shimizu and T.Shiosaki
    Mat. Res. Soc. Symp. Proc., 401, p.129 (1996).

  2. Step Coverage of Pb(Zr,Ti)O3 Thin Films Grown By MOCVD
    M. Shimizu, S. Hyodo, H. Fujisawa, H. Niu and T. Shiosaki
    Mat. Res. Soc. Symp. Proc., 433, p.201 (1996).

  3. Dependence of Crystalline Structure and Lattice Parameters on Film Thickness in PbTiO3/Pt/MgO Epitaxial Structure
    H.Fujisawa, M.Shimizu, T.Horiuchi, T.Shiosaki and K.Matsushige
    Jpn. J. Appl. Phys., 35, p.4913 (1996).

  4. Formation and Observation of 50 nm Polarized domains in PbZr1-XTiXO3 Thin Films Using Scanning Probe Microscope
    T.Hidaka, T.Maruyama, M.Saitoh, N.Mikoshiba, M.Shimizu, T.Shiosaki, L.A.Wills, R.Hiskes, S.A.Dicarolis and J.Amano
    Appl. Phys. Lett., 68, p.2358 (1996).

  5. Improvement of Isothermal Capacitance Transient Spectroscopy for Deep Level Measurement Including Interface Trap
    H. Yoshida, H. Niu, T. Matsuda and S. Kishino
    Semiconductor Characterization:Present Status and Future Needs,
    ed. W.M. Bullis, D.G. Seiler and A.C. Diebold, AIP Press, p.237 (1996).

  6. Influence of Heavy Metal Impurities on Localized states of Si MOS Structure
    S. Kishino, S. Iwamoto, H. Yoshida, H. Niu and T. Matsuda
    Proc. the 2nd Int. Symp. on Adv. Sci. and Tech. of Silicon Materials, Hawaii, U.S.A., p.443 (1996).

  7. Measurement of Localized States in SOI by Quasi-static C-V Method
    H. Yoshida, S. Iwamoto, H. Niu, T. Matsuda and S. Kishino
    Proc. the 2nd Int. Symp. on Adv. Sci. and Tech. of Silicon Materials, Hawaii, U.S.A., p.449 (1996).

  8. MOCVD法によるPb系強誘電体薄膜の作製とその特性
    清水　勝，藤沢浩訓，塩崎　忠
    化学工学会CVD特別研究会ミニシンポジウム（平成8年10月22日）.

  9. MOCVD法による強誘電体薄膜の作製とその評価
    清水　勝，丹生博彦，塩崎　忠
    平成8年(1996年)電気関係学会関西支部連合大会論文予稿集，p.S22，論文No.S4-3.

1997


  1. MOCVD Growth and Characterization of Pb-based Ferroelectric Thin Films
    T.Shiosaki, H.Fujisawa and M.Shimizu
    Proc.10th IEEE Int.Symp. on Applications of Ferroelectrics (Aug.18-21, East Brunswick, NJ, USA, 1996) pp.45-50 (1997).

  2. Electrical Properties of Pb(Zr,Ti)O3 Thin Films on Ir and IrO2 Electrodes by MOCVD
    M.Shimizu, H.Okino, H.Fujisawa and T.Shiosaki
    Proc.10th IEEE Int.Symp. on Applications of Ferroelectrics (Aug.18-21, East Brunswick, NJ, USA, 1996) pp.471-474 (1997)

  3. Step Coverage Characteristics of Pb(Zr,Ti)O3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
    M.Shimizu, S.Hyodo, H.Fujisawa, H.Niu and T.Shiosaki
    Jpn.J.Appl.Phys., 36, pp.5808-5811 (1997).

  4. Investigation of the Current Path of Pb(Zr,Ti)O3 Thin Films Using an Atomic Force Microscope with Simultaneous Current Measurement
    H.Fujisawa, M.Shimizu, T.Horiuchi, T.Shiosaki and K.Matsushige
    Appl.Phys.Lett., 71, pp.416-418 (1997).

  5. Effects of La and Nb Modification on Electrical Properties of Pb(Zr,Ti)O3 Thin Films by MOCVD
    M.Shimizu, H.Fujisawa and T.Shiosaki
    Integr.Ferroelectr., 14, pp.69-74 (1997).

  6. Characterization of Pb(Zr,Ti)O3 Thin Films by MOCVD Using the Total Reflection X-ray Diffraction Method
    H.Fujisawa, M.Shimizu and T.Shiosaki
    Integr.Ferroelectr., 15, pp.1-8 (1997).

  7. A HIGH SENSITIVE DEVICE PARAMETER FOR HEAVY METAL CONTAMINATION
    S. Iwamoto, H. Yoshida, S. Kishino, H. Niu, T. Matsuda, and H. Koyama
    CRYSTALLINE DEFECTS AND CONTAMINATION:THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING, The Electrochem. Soc. Proc. Vol. 97-22, p.404 (1997).

  8. A Study of the Defect Structures in MOCVD-Grown PbZrxTi1-xO3 Thin Films by Thermally Stimulated Current Measurements
    H.Okino, M.Shimizu, T.Horiuchi, T.Shiosaki and K.Matsushige
    Integr.Ferroelectr., 18, pp.63-70 (1997).

  9. MOCVD of Pb-Based Ferroelectric Oxide Thin Films
    M.Shimizu, H.Fujisawa and T.Shiosaki
    J.Crystal Growth, 174, pp.464-472 (1997).

  10. Simultaneous Observation of the Surface Topography and Current Flow of PZT Thin Films Using an Atomic Force Microscope
    H.Fujisawa, M.Shimizu, H.Niu, T.Shiosaki, T.Horiuchi and K.Matsushige
    Integr.Ferroelectr.,18, pp.71-78 (1997).

  11. Properties of Sputtered Ir and IrO2 Electrodes for PZT Capacitors
    M.Shimizu, S.Hyodo, S.Nakashima, H.Fujisawa, H.Niu
    Extended Abstracts of The 8th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
    (Oct.15-18, Plymouth, MA, USA., 1997), pp.124-127 (1997).

  12. MOCVD法による強誘電体薄膜の作製とその特性評価
    塩嵜忠，清水勝
    '97強誘電体薄膜メモリ技術フォーラム（1997年1月23日）pp.2-7.

1998


  1. Pb-Based and Bi-Based Ferroelectric Thin Films
    T.Shiosaki and M.Shimizu
    Journal of the Korean Physical Society, 32, S1316 (1998).

  2. Pb(Zr,Ti)O3 Thin Film Deposition on Ir and IrO2 Electrodes by MOCVD
    M.Shimizu, H.Fujisawa, S.Hyodo, S.Nakashima, H.Niu, H.Okino and T.Shiosaki
    Journal of the Korean Physical Society, 32, S1349 (1998).

  3. Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited by MOCVD
    M.Shimizu, H.Fujisawa, S.Hyodo, S.Nakashima, H.Niu, H.Okino and T.Shiosaki
    Mater.Res.Soc.Symp.Proc., 493, p.159 (1998) (December 1-5, Boston, Massachusetts, U.S.A., 1997).

  4. Electrical Properties of PZT Thin Films Grown on Ir/IrO2 Bottom Electrodes by MOCVD
    H. Fujisawa, S. Hyodo, K. Jitsui, M. Shimizu, H. Niu, H. Okino and T. Shiosaki
    Integrated Ferroelectrics, 21, 107 (1998).

  5. Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr,Ti)O3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
    H.Fujisawa, M.Yoshida, M.Shimizu and H.Niu
    Jpn.J.Appl.Phys., 37, 5132 (1998).

  6. Thermally Stimulated Current and Polarization Fatigue in Pb(Zr,Ti)O3 Thin Films
    H.Okino, Y.Toyoda, M.Shimizu , T.Horiuchi, T.Shiosaki and K.Matsushige
    Jpn.J.Appl.Phys., 37, 5137 (1998).

  7. Dependence of Electrical Properties of Pb(Zr,Ti)O3 Thin Films on the Grain Size and Film Thickness
    H.Fujisawa, S.Hyodo, Y.Ishii, N.Tomozawa, M.Shimizu and H.Niu
    Proc. of 11th IEEE Int. Symp. on Applications of Ferroelectrics (August 24-27, Montreux, Switzerland, 1998) pp.77-80.

  8. Refinement of Pb(Zr,Ti)O3 Thin Films Grown by MOCVD
    M.Shimizu, H.Fujisawa, S.Hyodo, Y.Fujimoto and H.Niu
    Proc. of 11th IEEE Int. Symp. on Applications of Ferroelectrics (August 24-27, Montreux, Switzerland, 1998) pp.139-142.

  9. MOCVD法による強誘電体Pb(Zr,Ti)O3(PZT)系薄膜の諸特性とメモリーデバイスへの応用
    清水　勝，塩嵜　忠
    電子情報通信学会技術研究報告(信学技報), 97, 19 (1998).

  10. MOCVD法による強誘電体Pb(Zr,Ti)O3(PZT)系薄膜の成長
    清水　勝
    応用物理, 67, 1299 (1998).

  11. MOCVD法による強誘電体Pb(Zr,Ti)O3(PZT)系薄膜の諸特性とメモリーデバイスへの応用
    清水　勝，塩嵜　忠
    電子情報通信学会電子デバイス研究会，97-207 (1998).

1999


  1. Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties
    H.Fujisawa, S.Nakashima, M.Shimizu and H.Niu
    Mater.Res.Soc.Symp.Proc., 541, p.327 (1999) (Boston, Massachusetts, U.S.A., Nov.30-Dec.4, 1998).

  2. Effects of the Purity of Metalorganic Sources on the Electrical Properties of Pb(Zr,Ti)O3 Thin Films by MOCVD
    M.Shimizu, M.Yoshida, H.Fujisawa and H.Niu
    Mater.Res.Soc.Symp.Proc., 541, p.411 (1999) (Boston, Massachusetts, U.S.A., Nov.30-Dec.4, 1998).

  3. Effects of the Purity of Ti Source Precursor on the Electrical Properties of Pb(Zr,Ti)O3 Thin Films Prepared by MOCVD
    M. Shimizu, M. Yoshida, H. Fujisawa and H. Niu
    Journal of the Korean Physical Society, 35, S1529 (1999).

  4. Electrical Properties of Highly Strained Epitaxial Pb(Zr,Ti)O3 Thin Films on MgO(100)
    H.Okino, T.Nishikawa, M.Shimizu, T.Horiuchi and K.Matsushige
    Jpn.J.Appl.Phys., 38, 5388 (1999).

  5. Size Effects of Epitaxial and Polycrystalline Pb(Zr,Ti)O3 Thin Films Grown by Metalorganic Chemical Vapor Deposition
    H.Fujisawa, S.Nakashima, K.Kaibara, M.Shimizu and H.Niu
    Jpn.J.Appl.Phys., 38, 5392 (1999).

  6. プラズマCVD法によるZnO透明導電薄膜
    石山敬造，清水　勝，田中　善之助，近藤和夫
    化学工学論文集　25, p.485 (1999).

  7. MOCVD法による強誘電体PZT薄膜の合成とその物性
    清水　勝，岡村　総一郎，塩崎　忠
    マテリアルインテグレーション　12, No.7, p.19 (1999).

  8. MOCVD-Pb(Zr,Ti)O3薄膜の電気的特性のグレインサイズ依存性
    藤沢浩訓，中嶋誠二，清水勝，丹生博彦
    電子情報通信学会技術研究報告書，ED98-248, SDM98-201, p.13 (1999).

2000


  1. Observations of Island Structures at the Initial Growth Stage of PbZrxTi1-xO3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
    H.Fujisawa, K.Morimoto, M.Shimizu and H.Niu, K.Honda and S.Ohtani
    Jpn.J.Appl.Phys., 39, 5446 (2000).

  2. Effects of Pt/SrRuO3 Top Electrodes on Ferroelectric Properties of Epitaxial (Pb,La)(Zr,Ti)O3 Thin Films
    M.Kobune, O.Matsuura, T.Matsuzaki, A.Mineshige, S.Fujii, H.Fujisawa, M.Shimizu and H.Niu
    Jpn.J.Appl.Phys., 39, 5451 (2000).

  3. Effects of Film Thickness and Grain Size on the Electrical Properties of Pb(Zr,Ti)O3 Thin Films Prepared by MOCVD
    M.Shimizu, S.Nakashima, K.Kaibara, H.Fujisawa and H.Niu
    Ferroelectrics, 241, 183 (2000).

  4. Thickness Dependence and Electrical Properties of Ultrathin PZT Films Grown on SrRuO3/SrTiO3 by MOCVD
    M.Shimizu, H.Fujisawa and H.Niu
    Mater.Res.Soc.Symp.Proc., 596, p.259 (2000).

  5. Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by MOCVD
    H.Fujisawa, M.Shimizu, H.Niu, K.Honda and S.Ohtani
    Mater.Res.Soc.Symp.Proc., 596, p.321 (2000).

  6. Preparation of Ir-Based Thin Film Electrodes by MOCVD
    M.Shimizu, K.Kita, H.Fujisawa, N.Tomozawa and H.Niu
    Proc. of 12th IEEE Int. Symp. on Applications of Ferroelectrics, p.961 (2000) (July 30 - August 2, Honolulu, Hawaii, USA, 2000).

  7. Observation of Polarization Reversal Processes in Pb(Zr,Ti)O3 Thin Films Using Atomic Force Microscopy
    H.Fujisawa, Y.Matsumoto, M.Shimizu and H.Niu
    Proc. of 12th IEEE Int. Symp. on Applications of Ferroelectrics, p.619 (2000) (July 30 - August 2, Honolulu, Hawaii, USA, 2000).

  8. Thickness Dependence of Crystalline and Electrical Properties of PZT Thin Films Grown by MOCVD
    Masaru Shimizu
    Workshop on Ferroelectric Materials in Nara (2 Feb., Nara, JAPAN, 2000).

  9. Pb(Zr,Ti)O3薄膜を用いたMFIS構造における絶縁体膜の検討　- C-V及びDLTS法による界面準位密度の測定 -
    藤沢浩訓，清水勝，丹生博彦
    平成１２年電子情報通信学会電子デバイス研究会／シリコン材料デバイス研究会「強誘電体材料及びその応用」
    電子情報通信学会技術研究報告書ED99-320,SDM99-213(2000-03)，p.7.

  10. MOCVD法によるIr薄膜の作製と強誘電体メモリへの応用
    喜多賢太郎，友澤方彦，藤沢浩訓，清水勝，丹生博彦
    誘電体研究委員会平成11年度年次報告書，p.381 (2000).


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