発表論文

2001-2005

2001


  1. Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
    H. Fujisawa, K. Kita, M. Shimizu and H. Niu
    Jpn. J. Appl. Phys., 40, pp.5551-5553 (2001).

  2. Microstructure and Electrical Properties of (Pb,La)(Zr,Ti)O3 Films Crystallized from Amorphous State by Two-Step Postdeposition Annealing
    M. Kobune, O. Matsuura, T. Matsuzaki, T. Sawada, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Jpn. J. Appl. Phys., 40, pp.5554-5558 (2001).

  3. MOCVD of Ir and IrO2 Thin Films for PZT Capacitors
    M. Shimizu, K. Kita, H. Fujisawa and H. Niu
    Mater. Res. Soc. Symp. Proc., 655, p.CC1.10.1-10 (2001) (Boston, Massachusetts, U.S.A., Nov.27-Dec.1, 2000).

  4. r> Piezoresponse Measurements for Pb(Zr,Ti)O3 Island Structure Using Scanning Probe Microscopy
    H. Fujisawa, K. Morimoto, M. Shimizu, H. Niu, K. Honda and S. Ohtani
    Mater. Res. Soc. Symp. Proc., 655, pp.CC10.4.1-6 (2001) (Boston, Massachusetts, U.S.A., Nov.27-Dec.1, 2000).

  5. Ferroelectricity of Nano-Size PZT Islands Grown by MOCVD
    M. Shimizu, H. Fujisawa, K. Morimoto, H. Niu, K. Honda and S. Ohtani
    Abs. of 13th Int. Symp. on Integrated Ferroelectrics (Mar.11-14, Colorado, USA, 2001), p.373.

  6. Growth of Ferroelectric PbZrxTi1-xO3 Thin Films by MOCVD
    M. Shimizu, H. Fujisawa, H. Niu, K. Honda
    Abs. of The 13th International Conference on Crystal Growth in Conjunction with The 11th International Conference on Vapor Growth and Epitaxy (July 30 - August 4, Kyoto, Japan, 2001), p.329.

  7. Observations of Initial Growth Stage of Epitaxial Pb(Zr,Ti)O3 Thin Films on SrTiO3(100) Substrate by MOCVD
    H. Fujisawa, K. Morimoto, H. Nonomura, M. Shimizu and H. Niu
    Abs. of The 13th International Conference on Crystal Growth in Conjunction with The 11th International Conference on Vapor Growth and Epitaxy (July 30 - August 4, Kyoto, Japan, 2001), p.330.

  8. Observations of Epitaxial Growth of Pb(Zr,Ti)O3 and SrRuO3 Thin Films on SrTiO3
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Abs. of The 8th Workshop on Oxide Electronics (Sep. 27-28, Osaka, Japan, 2001), p.50, PIII-10.

  9.  Investigation of Polarization Switching Processes in Pb(Zr,Ti)O3 Capacitors Using Piezoresponse Imaging
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Abs. of 10th Int. Meet. on Ferroelectricity (Sep. 3-7, 2001, Madrid, Spain), p.88, PS1C-13.

  10. Landau Theory-Based Validation of the Fatigue Mechanism in Sol-Gel and MOCVD PZT films Using the Correlated Analysis of the Hysteresis Loop Parameters
    D.Richinschi, M.Okuyama, A.I.Lerescu and M.Shimizu
    Abs. of 10th Int. Meet. on Ferroelectricity (Sep. 3-7, 2001, Madrid, Spain), p.92, PS1C-30.

  11. Effects of Introduction of Initial Nuclei on Physical Properties of (Pb,La)(Zr,Ti)O3 Films Crystallized from Amorphous conditions
    M.Kobune, O.Matsuura, T.Matsuzaki, T.Sawada, A.Mineshige, H.Fujisawa, M. Shimizu and H.Niu
    Abs. of 10th Int. Meet. on Ferroelectricity (Sep. 3-7, 2001, Madrid, Spain), p.143, PS2C-61.

  12. Low Temperature Growth of Pb(Zr,Ti)O3 Thin Films by Two Step MOCVD Using Seeds
    M. Shimizu, H. Fujisawa, M. Okaniwa and H. Niu
    Abs. of 10th Int. Meet. on Ferroelectricity (Sep. 3-7, 2001, Madrid, Spain), p.225, PS5A-04.

  13. Low Temperature Growth of PZT Thin Films and Its Application to Ir/PZT/Ir Capacitors
    M. Shimizu, K. Kita, M. Okaniwa, H. Fujisawa and H. Niu
    Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories
    (Nov.19-21, Gotemba, Japan, 2001), FED-175, pp.44-45, WO1-2.

  14. Low Temperature MOCVD of PZT Thin Films Using Seeds
    M. Okaniwa, H. Fujisawa, M. Shimizu and H. Niu
    Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories
    (Nov.19-21, Gotemba, Japan, 2001), FED-175, pp.91-92, P07.

  15. Fatigue Mechanisms in PZT Films Disclosed by a Correlated Analysis of Hysteresis Loop Parameters
    D. Ricinschi, M. Okuyama, M. Shimizu and M. Noda
    Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories
    (Nov.19-21, Gotemba, Japan, 2001), FED-175, pp.111-112, P17.

  16. Effect of Strain in SrRuO3 Bottom Electrode on the Crystal Structure and the Electric Property of PZT Thin Film
    K. Takahashi, T. Oikawa, K. Saito, H. Fujisawa, M. Shimizu and H. Funakubo
    Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories
    (Nov.19-21, Gotemba, Japan, 2001), FED-175, pp.122-123, P58.

  17. Characterization of I/S interface in MFIS structure using deep level transient spectroscopy
    T. Kamibayashi, S. Murata, H. Fujisawa, M. Shimizu and H. Niu,
    Ext. Abs. of 1st Int. Meeting on Ferroelectric Random Access Memories
    (Nov.19-21, Gotemba, Japan, 2001), FED-175, pp.192-193, P58.

  18. I層にMgOを用いたMIS及びMFIS構造の作製とその評価
    藤沢浩訓，村田周平，松岡裕益，板東達也，清水勝，丹生博彦
    平成13年電子情報通信学会技術研究報告書SDM2000-233(2001-03)，pp.33-37 (2001).

  19. 強誘電体材料の物性と測定・評価および応用技術
    清水　勝（分担執筆）
    技術情報協会，pp.147-157 (2001).

2002


  1. Growth of ferroelectric PbZrxTi1-xO3 thin films by metalorganic chemical vapor deposition (MOCVD)
    M. Shimizu, H. Fujisawa, H. Niu and K. Honda
    J. Crys. Growth, 237-239, pp.448-454 (2002).

  2. Observations of Initial Growth Stage of Epitaxial Pb(Zr,Ti)O3 Thin Films on SrTiO3(100) Substrate by MOCVD
    H. Fujisawa, H. Nonomura, M. Shimizu and H. Niu
    J. Crys. Growth, 237-239, pp.459-463 (2002).

  3. Investigation of Polarization Switching Processes in Pb(Zr,Ti)O3 Capacitors Using Piezoresponse Imaging
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Ferroelectrics, 269, pp.21-26 (2002).

  4. Landou theory-based validation of the fatigue mechanisms in sol-gel and MOCVD PZT films using the correlated analysisi of the hysteresis loop parameter
    D.Ricinschi, M.Okuyama and M.Shimizu
    Ferroelectrics, 269, pp.81-86 (2002).

  5. Effects of Introduction of Initial Nuclei on Physical Properties of (Pb,La)(Zr,Ti)O3 Films Crystallized from Amorphous State
    M.Kobune, O.Matsuura, T.Matsuzaki, T.Sawada, A.Mineshige, H.Fujisawa, M.Shimizu and H.Niu
    Ferroelectrics, 271, pp.199-204 (2002).

  6. Low Temperature Growth of Pb(Zr,Ti)O3 Thin Films by Two Step MOCVD Using Seeds
    M. Shimizu, M. Okaniwa, H. Fujisawa and H. Niu
    Ferroelectrics, 271, pp.217-222 (2002).

  7. Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current"
    H.Matsuura, T.Hase, Y.Sekimoto and M.Shimizu
    J. Appl. Phys., 91, 2085-2092 (2002).

  8. Effect of Strain in Epitaxially Grown SrRuO3 Thin Films on Crystal Structure and the Electric Properties
    K. Takahashi, T. Oikawa, K. Saito, S. Kaneko, H. Fujisawa, M. Shimizu and H. Funakubo
    Jpn. J. Appl. Phys., 41, pp.5376-5380 (2002).

  9. Epitaxial Growth and Ferroelectric Properties of the 20-nm-thick Pb(Zr,Ti)O3 Film on SrTiO3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
    H. Nonomura, H. Fujisawa, M. Shimizu and H. Niu
    Jpn. J. Appl. Phys., 41, pp.6682-6685 (2002).

  10. Crystalline and Ferroelectric Properties of Low-temperature Grown Pb(Zr,Ti)O3 Thin Films by Metalorganic Chemical Vapor Deposition
    M. Shimizu, M. Okaniwa, H. Fujisawa and H. Niu
    Jpn. J. Appl. Phys., 41, pp.6686-6689 (2002).

  11. Thermal Stability of SrRuO3 Bottom Electrode and Electric Property of Pb(Zr,Ti)O3 Thin Film Deposited on SrRuO3
    K. Takahashi, T. Oikawa, K. Saito, H. Fujisawa, M. Shimizu and H. Funakubo
    Jpn. J. Appl. Phys., 41, pp.6873-6876 (2002).

  12. Domain Motions in Epitaxial Pb(Zr,Ti)O3 Thin Film Capacitors by Piezoresponse Scanning Force Microscopy
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Proc. of 13th IEEE Int. Symp. on Applications of Ferroelectrics (May 28-June 1, 2002, Nara, Japan), pp.87-90.

  13. Characterization of PZT capacitors with Ir Electrodes Successfully Prepared by MOCVD
    K. Kita, H. Fujisawa, M. Shimizu and H. Niu
    Abs. of Int. Joint Conference on the Applications of Ferroelectrics 2002 (IFFF 2002) (May 28-June 1, 2002, Nara, Japan), p.133 (2002)

  14. Characterization of PZT Capacitors with Ir Electrodes Prepared by Low-Temperature MOCVD
    M. Shimizu, M. Okaniwa, K. Kita, H. Fujisawa and H. Niu
    Abs. of The 4th Japan-Korea Conference on Ferroelectrics (Aug. 21-23, 2002, Osaka University, Osaka, Japan), p.70.

  15. Characterization of MOCVD-TiO2 and ZrO2 Insulating Layers in MFIS Structures
    M. Sugata, H. Fujisawa, M. Shimizu and H. Niu
    Abs. of The 4th Japan-Korea Conference on Ferroelectrics (Aug. 21-23, 2002, Osaka University, Osaka, Japan), p.119.

  16. Ferroelectric Properties of PbZrxTi1-xO3 Thin Films by Low-Temperature MOCVD Using PbTiO3 Seeds
    M. Shimizu, M. Okaniwa, H. Fujisawa and H. Niu
    Abs. of 8th Int. Conf. on Electronic Ceramics and Their Applications (Aug. 25-28, 2002, Rome, Italy), p.238.

  17. Ferroelectric properties of nano-sized PbTiO3 islands
    H. Fujisawa, T. Yagi, H. Nonomura, M. Shimizu and H. Niu
    Abs. of 8th Int. Conf. on Electronic Ceramics and Their Applications (Aug. 25-28, 2002, Rome, Italy), p.231.

  18. Ferroelectric Properties of 15-20nm-Thick PZT Ultrathin Films Prepared by MOCVD
    H. Nonomura, H. Fujisawa, M. Shimizu and H. Niu
    Abs. of 2002 MRS Fall Meeting (Dec. 2-6, 2002, Boston, MA, USA), p.446.

  19. Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr,Ti)O3 Thin Films Using Piezoresponce Scanning Force Microscopy
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Abs. of 2002 MRS Fall Meeting (Dec. 2-6, 2002, Boston, MA, USA), p.450.

  20. 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O3薄膜の分極反転過程の観察
    藤沢 浩訓，八木 達也，清水 勝，丹生 博彦
    材料, 51, pp.975-978 (2002).

  21. MOCVD法によるPb(Zr,Ti)O3薄膜の低温成長と核付けが及ぼす効果
    岡庭 守，藤沢 浩訓，清水 勝，丹生 博彦
    電子情報通信学会技術研究報告書SDM 2001-256, pp.13-18 (2002).

  22. 次世代メモリをめざした強誘電体薄膜の作製と物性評価
    清水　勝
    日本セラミックス協会　関西支部　第5会若手フォーラム（平成14年10月11-12日，龍野市）pp.24-28 (2002).

  23. 圧電応答顕微鏡による強誘電体薄膜のドメイン観察
    清水　勝，藤沢　浩訓，丹生　博彦
    第21回電子材料部会セミナー（日本セラミックス協会）（2002年11月19日，東京大学）pp.21-16 (2002)

2003


  1. Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD
    M. Shimizu, M. Okaniwa, K. Kita, H. Fujisawa and H. Niu
    J. Korean Physical Society, 42, pp.S1203-S1206 (2003).

  2. Characterization of MOCVD-TiO2 and ZrO2 Insulating Layers in MFIS Structures by DLTS and ICTS methods
    H. Fujisawa, M. Sugata, M. Shimizu and H. Niu
    J. Korean Physical Society, 42, pp.S1354-S1356 (2003).

  3. Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr,Ti)O3 Thin Films Using Piezoresponse Scanning Force Microscopy
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Mater. Res. Soc. Symp. Proc., 748, pp.81-86 (2003) (Boston, Massachusetts, U.S.A., Dec.2-6, 2002).

  4. Ferroelectric Properties of 15-20nm-Thick PZT Ultrathin Films Prepared by MOCVD
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Mater. Res. Soc. Symp. Proc., 748, pp.255-260 (2003) (Boston, Massachusetts, U.S.A., Dec.2-6, 2002).

  5. Self-Assembled PbTiO3 Nano-Islands Prepared on SrTiO3 by Metalorganic Chemical Vapor Deposition
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Jpn. J. Appl. Phys., 42, pp.5918-5921 (2003).

  6. Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Films Prepared by Low-Temperature MOCVD Using PbTiO3 Seeds
    M. Shimizu, M. Okaniwa, H. Fujisawa and H. Niu
    J. European Ceramic Society, 24, pp.1625-1628 (2004).

  7. Ferroelectricity of the 1.7nm-high and 38nm-wide self-assembled PbTiO3 island
    H. Fujisawa, M. Okaniwa, H. Nonomura, M. Shimizu and H. Niu
    J. European Ceramic Society, 24, pp.1641-1645 (2004).

  8. Ferroelectric Properties of Self-Assembled PbZrxTi1-xO3 Islands Prepared on Various Substrates by MOCVD
    M. Shimizu, H. Fujisawa, H. Nonomura and H. Niu
    Abs. of 15th Int. Symp. on Integrated Ferroelectrics, pp.440-441, 9.2.2-C (Mar.9-12, Colorado, USA, 2003).

  9. PFM Observations of Switching Behavior in Ferroelectric Capacitors with Epitaxial Pb(Zr,Ti)O3 Thin Films
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Abs. of 10th European Meeting on Ferroelectricity, p.131 (3-8 Aug., Cambridge U.K., 2003).

  10. Epitaxial Growth of Pb(Zr,Ti)O3 Ultrathin Films by MOCVD and Their Ferroelectric Properties
    M. Shimizu, H. Nonomura, H. Fujisawa, H. Niu and K. Honda
    Abs. of 10th European Meeting on Ferroelectricity, p.303 (3-8 Aug., Cambridge U.K., 2003).

  11. Self-Assembled PbZrxTi1-xO3 Nanoislands Prepared by MOCVD
    M. Shimizu, H. Nonomura, H. Fujisawa, H. Niu and K. Honda
    Abs. of 10th European Meeting on Ferroelectricity, p.304 (3-8 Aug., Cambridge U.K., 2003).

  12. PFM Observations of Polarization Switching Processes in PZT Capacitors
    H. Fujisawa, T. Yagi, M. Shimizu and H. Niu
    Ext. Abs. of the 11th US-Japan Seminar on Dielectric and Piezoelectric Ceramics, pp.191-194 (Renaissance Sapporo Hotel, Sapporo, Japan, Sep.9-12, 2003).

  13. Novel Iridium Precursor for MOCVD
    N. Oshima, K. Kawano, M. Takamori, T. Yamakawa, S. Watari, H. Fujisawa, and M. Shimizu
    Abs of 204th Meeting of The Electrochemical Society, Abs # 554 (Oct. 12-16, 2003, Orlando, Florida, USA, 2003).

  14. Self-Assembled PbZrxTi1-xO3 Nano-Islands Prepared on SrTiO3 and MgO by MOCVD
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Abs. of 2003 Mater. Res. Soc. Fall Meeting, p.69 (C4.6) (Dec.1-5, Boston, Massachusetts, U.S.A., 2003).

  15. Ir Thin Films for PZT Capacitors Prepared by MOCVD Using a New Ir Precursor
    H. Fujisawa, S. Watari, M. Shimizu, H. Niu and N. Oshima
    Mater. Res. Soc. Symp. Proc., 784, pp.C11.37.1-6 (Dec.1-5, Boston, Massachusetts, U.S.A., 2003).

  16. A Novel Iridium Precursor for MOCVD
    K. Kawano, M. Takamori, T. Yamakawa, S. Watari, H. Fujisawa, M. Shimizu, H. Niu and N. Oshima
    Mater. Res. Soc. Symp. Proc., 784, pp.C3.30.1-6 (Dec.1-5, Boston, Massachusetts, U.S.A., 2003).

  17. 圧電応答顕微鏡による強誘電体薄膜の観察と評価
    清水 勝，藤沢 浩訓
    セラミックス, 38, pp.791-794 (2003).

  18. MOCVD法によるPb(Zr,Ti)O3極薄膜のエピタキシャル成長と電気的特性
    野々村 哉，藤沢 浩訓，清水 勝，丹生 博彦，本田 耕一郎
    電子情報通信学会技術研究報告書，Vol.102, No.732, pp.69-74 (2003).

  19. MOCVD法によるPb(Zr,Ti)O3薄膜の低温成長と特性の改善
    岡庭 守，藤沢 浩訓，清水 勝，丹生 博彦
    電子情報通信学会技術研究報告書，Vol.103，No.168，pp.1-6 (2003).

  20. MOCVD法によるPbTiO3自己集合島の構造制御
    野々村 哉，藤沢 浩訓，清水 勝，丹生 博彦，本田 耕一郎
    電子情報通信学会技術研究報告書，Vol.103, No.729，pp.31-36 (2003).

  21. 自己組織化による強誘電体PbTiO3ナノ構造の形成と構造制御
    藤沢 浩訓，清水 勝，丹生 博彦
    平成16年(2004)春：日本物理学会 第59回年次大会予稿集, p.973, 論文No.29p-XH-2．

2004


  1. Microstructures of Self-Assembled PbTiO3 Nanoislands Prepared by Metalorganic Chemical Vapor Deposition
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Jpn. J. Appl. Phys., 43, pp.6539-6542 (2004).

  2. Piezoresponse Force Microscopy Observations of Switching Behavior in Pb(Zr,Ti)O3 Capacitors
    H. Fujisawa, M. Shimizu and H. Niu
    Jpn. J. Appl. Phys., 43, pp.6571-6575 (2004).

  3. Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn1/3Nb2/3)O3・0.384PbZrO3・0.376PbTiO3 Thin Films Crystallized by Hot Isostatic Pressing
    M. Kobune, S. Kojima, A. Mineshige, T. Yazawa, H. Fujisawa and M. Shimizu
    Integr. Ferroelectr., 63, pp.105-108 (2004).

  4. Self-Assembled PbTiO3 Nanoislands Prepared by MOCVD
    M. Shimizu, H. Nonomura, H. Fujisawa, H. Niu and K. Honda
    Integr. Ferroelectr., 62, pp.109-113 (2004).

  5. Fabrication of planar and three-dimensional PZT capacitors with Ir-based electrodes solely by low-temperature MOCVD using a novel liquid Ir precursor
    H. Fujisawa, S. Watari, N. Iwamoto, M. Shimizu, H. Niu and N. Oshima
    Integr. Ferroelectr., 68, pp.85-94 (2004).

  6. Ferroelectric Properties and Memory Characteristics of Pb(Zr0.52Ti0.48)O3 Thin Films Crystallized by Hot Isostatic Pressing
    M. Kobune, Y. Nishioka, T. Yazawa, H. Fujisawa and M. Shimizu
    Integr. Ferroelectr., 64, pp.145-155 (2004).

  7. Ferroelectric Properties of Epitaxial Pb(Zr,Ti)O3 Ultrathin Films on SrTixRu1-xO3/SrTiO3 by MOCVD
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Abs. of 16th Int. Symp. on Integr. Ferroelectr., 7-06-P (Gyeongju, Korea, Apr.5-8, 2004).

  8. Characteristics of a Novel Iridium Precursor for MOCVD
    K. Kawano, -N. Oshima, -M. Takamori, T. Yamakawa, S. Watari, H. Fujisawa, M. Shimizu and H. Niu
    Abs. of 16th Int. Symp. on Integr. Ferroelectr., 7-11-P (Gyeongju, Korea, Apr.5-8, 2004).

  9. MOCVD of PZT and Ir Thin Films for Ferroelectric Memories
    M. Shimizu, H. Nonomura, S. Watari, H. Fujisawa, H. Niu, K. Honda and N. Oshima
    Abs. of 16th Int. Symp. on Integr. Ferroelectr., 7-11-I (Gyeongju, Korea, Apr.5-8, 2004).

  10. Structural Control of PbZrxTi1-xO3 Nanoislands Fabricated by MOCVD Using Self-Assembled Process
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Abs. of 16th Int. Symp. on Integr. Ferroelectr., 9-02-P (Gyeongju, Korea, Apr.5-8, 2004).

  11. Characterization of Pb(Zr,Ti)O3 Films Crystallized by the Hot Isostatic Pressing Method
    M. Okaniwa, H. Fujisawa, M. Shimizu, H. Niu and M. Kobune
    Abs. of 16th Int. Symp. on Integr. Ferroelectr., 10-15-P (Gyeongju, Korea, Apr.5-8, 2004).

  12. Preparation of PbZrxTi1-xO3 Nanostructures on Various Substrates by MOCVD
    H. Nonomura, H. Fujisawa, M.Shimizu, H. Niu and K. Honda
    Abs. of ICCG 14 & ICVGE 12, p.219 (Grenoble, France, Aug.9-13, 2004).

  13. Epitaxial growth and ferroelectric properties of PZT ultrathin films by metalorganic chemical vapor deposition
    H. Nonomura, H. Fujisawa, M. Shimizu and H. Niu
    Abs. of ICCG 14 & ICVGE 12, p.400 (Grenoble, France, Aug.9-13, 2004).

  14. Fabrication of Ir-Based Electrodes by MOCVD Using Ir(EtCp)(CHD) and their Applications to PZT Capacitors
    S. Watari, N. Iwamoto, H. Fujisawa, M. Shimizu, H. Niu and N. Oshima
    Abs. the 5th Korea-Japan Conf. on Ferroelectricity, F-10-P, p.86 (Seoul, Korea, Aug.18-21, 2004).

  15. Self-assembled PbZrxTi1-xO3 Nanostructures Prepared on Various Substrates by MOCVD
    M. Shimizu, H. Nonomura, H. Fujisawa, H. Niu and K. Honda
    Abs. of the 5th Korea-Japan Conference on Ferroelectricity, D-05-P, p.128 (Seoul, Korea, Aug.18-21, 2004).

  16. MOCVD Growth and Ferroelectric Properties of PZT Ultrathin Films with Thicknesses below 10nm
    H. Fujisawa, H. Nonomura, M. Shimizu, H. Niu and K. Honda
    Abs. of 2004 MRS Fall Meeting, H4-8, p.212 (Boston, Massachusetts, U.S.A., Nov.29-Dec.3, 2004).

  17. Microstructure and Ferroelectric Properties of Self-Assembled PbTiO3 Nanostructures Prepared by MOCVD
    H. Nonomura, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Abs. of 2004 MRS Fall Meeting, H4-5, p.211 (Boston, Massachusetts, U.S.A., Nov.29-Dec.3, 2004).

  18. Preparation of Self-assembled PbTiO3 Nanostructures by Metalorganic Chemical Vapor Deposition and Their Ferro- and Piezo-electric Properties
    H. Fujisawa, M. Nagata, H. Nonomura, M. Shimizu, H. Niu and K. Honda
    Proc. of the 21st Sensor Symp. 2004, B1-6, pp.81-84 (Kyoto, Japan, Oct.14-15, 2004).

2005


  1. Piezo-and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition
    M. Okaniwa, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Jpn. J. Appl. Phys., 44, pp.6891-6894 (2005).

  2. Ferroelectricity and local currents in epitaxial 5 and 9 nm-thick Pb(Zr,Ti)O3 ultrathin films by scanning probe microscopy
    H. Fujisawa, H.Nonomura, M. Shimizu, H.Niu and K.Honda
    Appl. Phys. Lett., 86, 012903 (2005).

  3. Structural control of self-assembled PbTiO3 nanoislands fabricated by metalorganic chemical vapor deposition
    H. Nonomura, M. Nagata, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Appl. Phys. Lett., 86, 163106 (2005).

  4. Preparation of PbZrxTi1-xO3 Nanostructures on Various Substrates by MOCVD
    M. Shimizu, H. Nonomura, H. Fujisawa, H. Niu and K. Honda
    J. Cryst. Growth, 275, pp.e2433-e2438 (2005).

  5. Control of Shape and In-plane Orientation of Self-Assembled PbTiO3 Nanoislands Prepared by MOCVD
    H. Nonomura, M. Nagata, H. Fujisawa, M. Shimizu, H. Niu and K. Honda
    Trans. of the Mat. Res. Soc. of Japan, 30, pp.93-96 (2005).

  6. Investigation of Annealing Programs by Hot Isostatic Pressing for Crystallization of Amorphous Pb(Zr0.30Ti0.70)O3 Thin Films
    K. Fukushima, M. Kobune, Y. Nishioka, T. Yamaji, T. Yazawa, H. Fujisawa and M. Shimizu
    Trans. of the Mat. Res. Soc. of Japan, 30, pp.97-100 (2005).

  7. Preparation of IrO2 Thin Films by MOCVD Using Ir(EtCp)(CHD)
    H. Fujisawa, M. Shimizu and H. Niu, S. Watari and N. Oshima
    J. Korean Phys. Soc., 46, pp.176-179 (2005).

  8. Ferroelectric Thin Films
    M. Shimizu, H. Fujisawa and H. Niu
    Eds. M. Okuyama and Y. Ishibashi (Springer, Heidelberg, 2005), pp.59-75.

  9. Computational Studies of Voltage in RF Magnetron Discharge
    M. Yamamoto, S. Nakashima, H. Yamanishi, S. Ogata, Y. Shibutani
    Jpn. J. Appl .Phys., 44 pp.8635-8639 (2005).

  10. Preparation of Ir and IrO2 Electrodes By MOCVD Using Ir(EtCp)(CHD)
    H. Fujisawa, S. Watari, M. Shimizu, H. Niu and N. Oshima
    Abs. of 17th Int. Symp. on Integr. Ferroelectr., 9-2-C moved to 9-13-P (Shanghai, China, Apr.17-20, 2005).

  11. Ferroelectric PbZrxTi1-xO3 Nanostructures Fabricated on Single Crystal Substrates by MOCVD
    M. Shimizu, H. Nonomura, H. Fujisawa, H. Niu and K. Honda
    Abs. of 17th Int. Symp. on Integr. Ferroelectr., 12-6-C (Shanghai, China, Apr.17-20, 2005).

  12. SPM Observations of Pb(Zr,Ti)O3 Ultrathin Films with Thicknesses below 10nm
    H. Fujisawa, H. Nonomura, Y. Takashima, M. Shimizu, H. Niu, K. Honda
    Abs. of 6th Pac. Rim Conf. on Ceram. and Glass Technol., PACRIM-EL1-3-2005 (Hawaii, USA, Sep.11-16, 2005).

  13. Self-Assembled PbTiO3 Nanostructures by MOCVD and Their Piezoelectric and Ferroelectric Properties
    M. Shimizu, M. Okaniwa, H. Nonomura, M. Nagata, H. Fujisawa, H. Niu and K. Honda
    Abs. of 6th Pac. Rim Conf. on Ceram. and Glass Technol., PACRIM-EL1-2-2005 (Hawaii, USA, Sep.11-16, 2005) (Invited paper).

  14. A Novel Iridium Precursor for MOCVD
    K. Kawano, T. Furukawa, M. Takamori, K. Tada, T. Yamakawa, N. Oshima, H. Fujisawa and M. Shimizu
    Meet. Abstr. Electrochem. Soc. 502, 527 (2006) (Oct. 16-21, 2005, Los Angeles, California).

  15. Preparation of Ir and IrO2 Electrodes by MOCVD Using a New Ir Precursor
    H. Fujisawa, N. Iwamoto, M. Shimizu, H. Niu, K. Furukawa, K. Kawano, and N. Oshima,
    Abs. of 2005 MRS Fall Meeting, T3.30, p.525 (Massachusetts, U.S.A., Nov.28-Dec.2, 2005).

  16. A Novel Ir Precursor for MOCVD
    K. Kawano,, T. Furukawa,, M. Takamori,, K. Tada, T. Yamakawa, N. Oshima,, H. Fujisawa and M. Shimizu
    Abs. of 2005 MRS Fall Meeting, T3.38, p.527 (Boston, Massachusetts, U.S.A., Nov.28-Dec.2, 2005).

  17. Structural, Piezoelectric and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoislands Fabricated by MOCVD
    M. Shimizu, M. Nagata, H. Fujisawa, H. Niu, K. Honda, Y. Kotaka and M. Osada
    Abs. of 2005 MRS Fall Meeting, T4.1, p.531 (Boston, Massachusetts, U.S.A., Nov.28-Dec.2, 2005) (Invited paper).

  18. MOCVD法による強誘電体ナノ構造の形成とその物性
    清水　勝，野々村哉，藤沢浩訓，丹生博彦，本田耕一郎
    電子情報通信学会技術研究報告書，104，No.713，pp.23-28 (2005).

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